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ORCIDMicroelectronics Reliability, Volume 50
Volume 50, Number 1, January 2010
- C. D. Breach, F. Wulff:
A brief review of selected aspects of the materials science of ball bonding. 1-20
- Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Yongjie Zhang, Jongsun Park
, Tae Geun Kim:
Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories. 21-25 - Guido Notermans, Theo Smedes, Zeljko Mrcarica, Peter C. de Jong, Ralph Stephan, Hans van Zwol, Dejan M. Maksimovic:
ESD protection for thin gate oxides in 65 nm. 26-31 - J. Vobecký, V. Záhlava, V. Komarnitskyy:
Doping compensation for increased robustness of fast recovery silicon diodes. 32-38 - Ilbilge Dökme, Semsettin Altindal, Tuncay Tunç, Ibrahim Uslu:
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes. 39-44 - Jie Liu, Jicheng Zhou, Hongwei Luo, Xuedong Kong, Yunfei En, Qian Shi, Yujuan He:
Total-dose-induced edge effect in SOI NMOS transistors with different layouts. 45-47 - Hui-Wen Tsai, Ming-Dou Ker:
Design of 2xVDD-tolerant mixed-voltage I/O buffer against gate-oxide reliability and hot-carrier degradation. 48-56 - F. Alagi:
DMOS FET parameter drift kinetics from microscopic modeling. 57-62 - Bo-Ching He, Chun-Hu Cheng, Hua-Chiang Wen, Yi-Shao Lai, Ping-Feng Yang, Meng-Hung Lin, Wen-Fa Wu, Chang-Pin Chou:
Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate. 63-69 - Yang-Hua Chang, Rong-Hao Syu:
Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base. 70-74 - Sébastien Gallois-Garreignot, Vincent Fiori, D. Nelias:
Fracture phenomena induced by Front-End/Back-End interactions: Dedicated failure analysis and numerical developments. 75-85 - Robin Alastair Amy, Guglielmo S. Aglietti, Guy Richardson:
Accuracy of simplified printed circuit board finite element models. 86-97 - C. Y. Khor, M. Abdul Mujeebu, Mohd Zulkifly Abdullah, F. Che Ani:
Finite volume based CFD simulation of pressurized flip-chip underfill encapsulation process. 98-105 - De-Shin Liu, Zhen-Wei Zhuang, Ching-Yang Chen, Cho-Liang Chung:
Modeling of multi-layered structure containing heterogeneous material layer with randomly distributed particles using infinite element method. 106-115 - Dominik Herkommer, Jeff M. Punch, Michael Reid:
A reliability model for SAC solder covering isothermal mechanical cycling and thermal cycling conditions. 116-126 - Mei-Ling Wu:
Design of experiments to investigate reliability for solder joints PBGA package under high cycle fatigue. 127-139 - Mei-Ling Wu, Donald Barker:
Rapid assessment of BGA life under vibration and bending, and influence of input parameter uncertainties. 140-148 - Syed Zafar Shazli, Mehdi Baradaran Tahoori:
Using Boolean satisfiability for computing soft error rates in early design stages. 149-159
Volume 50, Number 2, February 2010
- Sachin Kumar, Eli Dolev, Michael G. Pecht:
Parameter selection for health monitoring of electronic products. 161-168 - Giacomo Langfelder:
Design of a fully CMOS compatible 3-µm size color pixel. 169-173 - Yang-Hua Chang, Kun-Ying Yang:
Extraction of bias-dependent parasitic source/drain resistance in MOSFETs with an advanced mobility model. 174-178 - Zhongfa Ma, Peng Zhang, Yong Wu, Weihua Li, Yiqi Zhuang, Lei Du:
A percolation study of RTS noise amplitudes in nano-MOSFETs by Monte Carlo simulation. 179-182 - Martin Sauter, Joost A. Willemen:
Simulation and modelling of VDMOSFET self protection under TLP-stress. 183-189 - Despina C. Moschou, Giannis P. Kontogiannopoulos, Dimitrios N. Kouvatsos, Apostolos T. Voutsas:
On the importance of the Vg, max-Vth parameter on LTPS TFT stressing behavior. 190-194 - Eun-Kyung Kim:
Assessment of ultra-thin Si wafer thickness in 3D wafer stacking. 195-198 - Samrat L. Sabat, Siba K. Udgata, K. P. N. Murthy:
Small signal parameter extraction of MESFET using quantum particle swarm optimization. 199-206 - Yu. N. Novikov, A. V. Vishnyakov, V. A. Gritsenko, K. A. Nasyrov, Hei Wong:
Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect. 207-210 - A. A. Dakhel:
Effect of ytterbium doping on the optical and electrical properties of intrinsic In2O3 thin films. 211-216 - Johanna Virkki, Tomi Seppälä, Laura Frisk, P. Heino:
Accelerated testing for failures of tantalum capacitors. 217-219 - Toshihide Takahashi, Shuichi Komatsu, Hiroshi Nishikawa, Tadashi Takemoto:
Thin film joining for high-temperature performance of power semi-conductor devices. 220-227 - J. de Vries, W. Balemans, W. D. van Driel:
Predictive modeling of board level shock-impact reliability of the HVQFN-family. 228-234 - Olivér Krammer, Bálint Sinkovics:
Improved method for determining the shear strength of chip component solder joints. 235-241 - Seunghyun Cho, Tae-Eun Chang, Joseph Y. Lee, Hyung-Pil Park, Youngbae Ko, GyunMyoung Park:
New dummy design and stiffener on warpage reduction in Ball Grid Array Printed Circuit Board. 242-250 - Lijuan Liu, Wei Zhou, Hongbo Zhang, Baoling Li, Ping Wu:
Electromigration behavior in Cu/Sn-8Zn-3Bi/Cu solder joint. 251-257 - Hyomi Kim, Jongmin Kim, Jooheon Kim:
Effects of novel carboxylic acid-based reductants on the wetting characteristics of anisotropic conductive adhesive with low melting point alloy filler. 258-265 - Chiao-Tzu Huang, Kuen-Suan Chen, Tsang-Chuan Chang:
An application of DMADV methodology for increasing the yield rate of surveillance cameras. 266-272 - Hongge Li, Wei Zhao, Youguang Zhang:
Micropower fully integrated CMOS readout interface for neural recording application. 273-281 - N. P. Futane, Shubhajit Roy Chowdhury, C. Roy Chowdhury, Hiranmay Saha:
ANN based CMOS ASIC design for improved temperature-drift compensation of piezoresistive micro-machined high resolution pressure sensor. 282-291 - Mile K. Stojcev, Igor Z. Milovanovic, Emina I. Milovanovic, Tatjana R. Nikolic:
Address generators for linear systolic array. 292-303 - Oana Boncalo, Alexandru Amaricai, Mihai Udrescu, Mircea Vladutiu:
Quantum circuit's reliability assessment with VHDL-based simulated fault injection. 304-311
- Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Ching-Sung Ho:
Integration-based approach to evaluate the sub-threshold slope of MOSFETs. 312-315
Volume 50, Number 3, March 2010
- Michael G. Pecht, Rubyca Jaai:
A prognostics and health management roadmap for information and electronics-rich systems. 317-323
- Tongdan Jin, Haitao Liao, Madhu Kilari:
Reliability growth modeling for in-service electronic systems considering latent failure modes. 324-331
- Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai:
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. 332-337 - Saeed Mohammadi, Ali Afzali-Kusha:
Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects. 338-345 - W. S. Lau, Peizhen Yang, Eng Hua Lim, Yee Ling Tang, Seow Wei Lai, V. L. Lo, S. Y. Siah, L. Chan:
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors. 346-350 - S. Karatas, Abdulmecit Türüt:
The frequency-dependent electrical characteristics of interfaces in the Sn/p-Si metal semiconductor structures. 351-355 - Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
SrO capping effect for La2O3/Ce-silicate gate dielectrics. 356-359 - Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov:
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. 360-364 - Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou:
Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance. 365-369 - Yang-Hua Chang, Jian-Wen Chen:
Extraction of VBIC model parameters for InGaAsSb DHBTs. 370-375 - Feifei He, Cher Ming Tan:
Circuit level interconnect reliability study using 3D circuit model. 376-390 - X. Dong, P. Zhu, Zhonghua Li, Jun Sun, J. D. Boyd:
Electromigration-induced stress in a confined bamboo interconnect with randomly distributed grain sizes. 391-397 - Yeong K. Kim, In Soo Park, Jooho Choi:
Warpage mechanism analyses of strip panel type PBGA chip packaging. 398-406 - Taho Yang, Yuan-Ting Cheng:
The use of Mahalanobis-Taguchi System to improve flip-chip bumping height inspection efficiency. 407-414 - Seyyed Javad Seyyed Mahdavi, Karim Mohammadi:
Reliability enhancement of digital combinational circuits based on evolutionary approach. 415-423 - Anirban Sengupta, Reza Sedaghat, Zhipeng Zeng:
A high level synthesis design flow with a novel approach for efficient design space exploration in case of multi-parametric optimization objective. 424-437 - Injoong Kim:
Reliability Object Model Tree (ROM-Tree): A system design-for-reliability method. 438-446
- B. Bouabdallah, Y. Bourezig, B. Benichou:
Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode. 447-453
Volume 50, Number 4, April 2010
- Massimo Vanzi:
Editorial. 455 - David Veyrié, Olivier Gilard, Kevin Sanchez, Sébastien Lhuillier, Frédéric Bourcier:
New methodology for the assessment of the thermal resistance of laser diodes and light emitting diodes. 456-461 - Daniel T. Cassidy, Chadwick K. Hall, Othman Rehioui, Laurent Béchou:
Strain estimation in III-V materials by analysis of the degree of polarization of luminescence. 462-466 - Matteo Meneghini, Nicola Trivellin, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni, Gaudenzio Meneghesso:
Reliability evaluation for Blu-Ray laser diodes. 467-470 - Giovanna Mura, Massimo Vanzi:
The interpretation of the DC characteristics of LED and laser diodes to address their failure analysis. 471-478
- Tong Yan Tee, Xuejun Fan, Yi-Shao Lai:
Advances in Wafer Level Packaging (WLP). 479-480 - Cheng-Ta Ko, Kuan-Neng Chen:
Wafer-level bonding/stacking technology for 3D integration. 481-488 - Li-Cheng Shen, Chien-Wei Chien, Hsien-Chie Cheng, Chia-Te Lin:
Development of three-dimensional chip stacking technology using a clamped through-silicon via interconnection. 489-497 - Theresa Sze, Darko Popovic, Jing Shi, Yi-Shao Lai, James G. Mitchell, Bruce Guenin, Tsung-Yueh Tsai, Chin-Li Kao, Matthew Giere:
Early experience with in situ chip-to-chip alignment characterization of Proximity Communication flip-chip package. 498-506 - Changsoo Jang, Byeng Dong Youn, Ping F. Wang, Bongtae Han, Suk-Jin Ham:
Forward-stepwise regression analysis for fine leak batch testing of wafer-level hermetic MEMS packages. 507-513 - Yong Liu:
Trends of power semiconductor wafer level packaging. 514-521 - Jiunn Chen, Yi-Shao Lai, Chueh-An Hsieh, Chia Yi Hu:
Redistribution in wafer level chip size packaging technology for high power device applications: Process and design considerations. 522-527 - Hendrik Pieter Hochstenbach, Willem D. van Driel, Dao-Guo Yang, Jeroen J. M. Zaal, E. Bagerman:
Designing for reliability using a new Wafer Level Package structure. 528-535 - X. J. Fan, B. Varia, Q. Han:
Design and optimization of thermo-mechanical reliability in wafer level packaging. 536-546 - Pridhvi Dandu, Xuejun Fan, Y. Liu, C. Diao:
Finite element modeling on electromigration of solder joints in wafer level packages. 547-555 - Hao-Yuan Chang, Wen-Fung Pan, Meng-Kai Shih, Yi-Shao Lai:
Geometric design for ultra-long needle probe card for digital light processing wafer testing. 556-563 - Y. A. Su, Long Bin Tan, T. Y. Tee, Vincent B. C. Tan:
Rate-dependent properties of Sn-Ag-Cu based lead-free solder joints for WLCSP. 564-576 - Paul Crosbie, Yeong J. Lee:
Multiple impact characterization of wafer level packaging (WLP). 577-582
Volume 50, Number 5, May 2010
- Juin J. Liou, Chao-Sung Lai:
Editorial. 583
- Tzu-I Tsai, Horng-Chih Lin, Min-Feng Jian, Tiao-Yuan Huang, Tien-Sheng Chao:
A simple method for sub-100 nm pattern generation with I-line double-patterning technique. 584-588 - Sheng-Lyang Jang, Chia-Wei Chang, Yi-Jhe Song, Cheng-Chen Liu, Chun-Wei Hsu:
On the injection methods in a top-series-injection-locked frequency divider. 589-593 - Sheng-Lyang Jang, Cheng-Chen Liu, Ren-Kai Yang, Chih-Chieh Shih, Chia-Wei Chang, Hsiu-An Yeh:
A 0.35 µm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage-current feedback topology. 594-598 - Chuan-Hsi Liu, H. W. Chen:
Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics. 599-602 - Bing-Yue Tsui, Pei-Yu Wang, Ting-Yeh Chen, Jung-Chien Cheng:
Multi-gate non-volatile memories with nanowires as charge storage material. 603-606 - H. J. Hung, James B. Kuo, D. Chen, Chih-Sheng Yeh:
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect. 607-609 - Bo-Chin Wang, Ting-Kuo Kang, San-Lein Wu, Shoou-Jinn Chang:
Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs. 610-613 - H. W. Chen, Chuan-Hsi Liu:
Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics. 614-617 - Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, Feng-Renn Juang, Chien-Ting Lin, Chieh-Ming Lai:
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. 618-621 - Wing-Shan Tam, Oi-Ying Wong, Tsz-Ching Ng, Chi-Wah Kok, Hei Wong:
Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure. 622-626 - Oi-Ying Wong, Wing-Shan Tam, Jun Liu, Oi-Kan Shea, Shiu Hung Cheung, Chi-Wah Kok, Hei Wong:
Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors. 627-630 - Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Jeffrey S. Fu, Cheng-Shun Wang:
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers. 631-634
- Chih-Hong Hwang, Yiming Li, Ming-Hung Han:
Statistical variability in FinFET devices with intrinsic parameter fluctuations. 635-638 - Jer-Chyi Wang, Pai-Chi Chou, Chao-Sung Lai, Wen-Hui Lee, Chi-Fong Ai:
Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application. 639-642 - Sk. Ziaur Rahaman, Siddheswar Maikap:
Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte. 643-646 - Kuo-Fu Lee, Yiming Li, Tien-Yeh Li, Zhong-Cheng Su, Chin-Hong Hwang:
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell. 647-651 - Jagan Singh Meena, Min-Ching Chu, Jitendra N. Tiwari, Hsin-Chiang You, Chung-Hsin Wu, Fu-Hsiang Ko:
Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer. 652-656 - Ming-Hung Han, Yiming Li, Chih-Hong Hwang:
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit. 657-661 - Po-Chin Huang, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Chien Ting Lin, Mike Ma, Osbert Cheng:
Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method. 662-665 - Tseng-Chin Lee, Bing-Yue Tsui, Pei-Jer Tzeng, Ching-Chiun Wang, Ming-Jinn Tsai:
A process for high yield and high performance carbon nanotube field effect transistors. 666-669 - Kou-Chen Liu, Wen-Hsien Tzeng, Kow-Ming Chang, Yi-Chun Chan, Chun-Chih Kuo, Chun-Wen Cheng:
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device. 670-673 - Samit Kumar Ray, Rajkumar Singha, Samaresh Das, Santanu Manna, Achintya Dhar:
Ge based nanostructures for electronic and photonic devices. 674-678
- Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi Wu:
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs. 679-682 - Cheng-Chen Lin, Liann-Be Chang, Ming-Jer Jeng, Chia-Yi Yen, Atanu Das, Chung-Yi Tang, Ming-Yi Tsai, Mu-Jen Lai:
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps. 683-687 - Hung-Pin D. Yang, Zao-En Yeh, Gray Lin, Hao-Chung Kuo, Jim Y. Chi:
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications. 688-691 - Pin-Hsiang Chiu, Chien-Jung Huang, Cheng-Fu Yang, Teen-Hang Meen, Yeong-Her Wang:
Red polymer light-emitting devices based on dye-dispersed poly (9, 9-dioctylfluorene-alt-benzothiadiazole). 692-695 - Peng Yu Chen, Herng Yih Ueng, Meiso Yokoyama:
High efficiency p-i-n organic light-emitting diodes with a novel n-doping layer. 696-698 - Hui-Wen Cheng, Yiming Li:
Optimization on configuration of surface conduction electron-emitters. 699-703 - Chun-Yu Wu, Ta-Chuan Liao, Ming-H Yu, Sheng-Kai Chen, Chung-Min Tsai, Huang-Chung Cheng:
Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation. 704-708 - Chyuan Haur Kao, T. C. Chan, Kung Shao Chen, Yu-Teng Chung, Wen-Shih Luo:
Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon. 709-712 - Meng Zhang, Mingxiang Wang:
An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors. 713-716 - Henry J. H. Chen, Ming-Tien Huang, Y. B. Liu:
Fabrication of Au/PEDOT stacked electrodes for organic thin film transistors by imprinting technology. 717-721 - Hung-Pin D. Yang, Chih-Tsung Shih, Su-Mei Yang, Tsin-Dong Lee:
High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range. 722-725 - Cheng-Ling Lee, Kuo-Hsiang Lin, Nan-Kuang Chen:
Analysis of optical properties of fundamental-mode in waveguide tapered fibers. 726-729 - Shou-Yi Kuo, Kou-Chen Liu, Fang-I Lai, Jui-Fu Yang, Wei-Chun Chen, Ming-Yang Hsieh, Hsin-I Lin, Woei-Tyng Lin:
Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films. 730-733
- Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin, Tai-You Chen, Chien-Chang Huang, Kai-Siang Hsu, Wen-Chau Liu:
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT). 734-737