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ORCIDKarol Kalna
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2020 – today
- 2020
[j13]Daniel Nagy
, Gabriel Espineira, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Karol Kalna, Natalia Seoane:
Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes. IEEE Access 8: 53196-53202 (2020)
2010 – 2019
- 2019
- [j12]Daniel Nagy, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane:
Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs. IEEE Access 7: 12790-12797 (2019) - 2018
- [j11]Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei Dong Zhang, Nour-Eddine Bourzgui, Ali Soltani:
Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access 6: 42721-42728 (2018) - [j10]Olujide Adenekan, Paul Holland, Karol Kalna:
Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. Microelectron. J. 81: 94-100 (2018) - 2017
- [j9]Khaled Ahmeda, Brendan Ubochi, Brahim Benbakhti, Steven J. Duffy, Ali Soltani, Wei Dong Zhang, Karol Kalna:
Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures. IEEE Access 5: 20946-20952 (2017) - [j8]Brendan Ubochi, Soroush Faramehr, Khaled Ahmeda, Petar Igic, Karol Kalna:
Operational frequency degradation induced trapping in scaled GaN HEMTs. Microelectron. Reliab. 71: 35-40 (2017) - [c3]Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna:
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. ESSDERC 2017: 184-187 - 2015
- [j7]Manuel Aldegunde, Karol Kalna:
Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. 189: 31-36 (2015) - [j6]Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro:
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electron. 11(2): 256-262 (2015) - 2011
- [j5]Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna:
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30(6): 841-851 (2011) - 2010
- [j4]Manuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna:
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. 181(1): 24-34 (2010) - [j3]Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov:
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectron. Reliab. 50(3): 360-364 (2010)
2000 – 2009
- 2007
- [c2]Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna:
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. LSSC 2007: 115-122 - 2005
- [c1]Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna, Asen Asenov:
A High-Performance Parallel Device Simulator for High Electron Mobility Transistors. PARCO 2005: 407-414 - 2003
- [j2]Karol Kalna, Asen Asenov:
Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study. Math. Comput. Simul. 62(3-6): 357-366 (2003) - 2001
- [j1]Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne:
Scaling of pHEMTs to Decanano Dimensions. VLSI Design 13(1-4): 435-439 (2001)
Coauthor Index
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