![](https://dblp1.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp1.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp1.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
default search action
Tomás Palacios
Person information
- affiliation: Massachusetts Institute of Technology, Cambridge, USA
Refine list
![note](https://dblp1.uni-trier.de/img/note-mark.dark.12x12.png)
refinements active!
zoomed in on ?? of ?? records
view refined list in
export refined list as
2020 – today
- 2024
- [c18]Deniz Umut Yildirim, Jaeyoung Jung, Amr Elsakka, Giuseppe Moschetti, Miguel M. Lopez, Jonas Hansryd, Tomás Palacios, Anantha P. Chandrakasan:
A 0.7cm2 3.5GHz, -31 dBm Sensitivity Batteryless 5G Energy Harvester Backscattering Chip for Asset Identification in IoT-Enabled Warehouses. CICC 2024: 1-2 - [c17]Shisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao:
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. DRC 2024: 1-2 - [c16]John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios:
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. DRC 2024: 1-2 - 2023
- [c15]Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios:
First Demonstration of GaN RF HEMTs on Engineered Substrate. DRC 2023: 1-2 - [c14]Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios:
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c13]Yiyue Luo, Kui Wu, Andrew Spielberg, Michael Foshey, Daniela Rus, Tomás Palacios, Wojciech Matusik:
Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting. CHI 2022: 175:1-175:13 - 2021
- [c12]Yiyue Luo, Kui Wu, Tomás Palacios, Wojciech Matusik:
KnitUI: Fabricating Interactive and Sensing Textiles with Machine Knitting. CHI 2021: 668:1-668:12 - [c11]Yiyue Luo, Yunzhu Li, Michael Foshey, Wan Shou
, Pratyusha Sharma, Tomás Palacios, Antonio Torralba, Wojciech Matusik:
Intelligent Carpet: Inferring 3D Human Pose From Tactile Signals. CVPR 2021: 11255-11265 - [c10]Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios:
Performance Estimation of GaN CMOS Technology. DRC 2021: 1-2 - [c9]Joshua A. Perozek, Ahmad Zubair, Tomás Palacios:
Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz. DRC 2021: 1-2 - 2020
- [c8]Girish Rughoobur
, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande:
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. DRC 2020: 1-2 - [c7]Pao-Chuan Shih
, Girish Rughoobur
, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios:
GaN Nanowire Field Emitters with a Self-Aligned Gate Process. DRC 2020: 1-2 - [c6]Ahmad Zubair, John Niroula, Nadim Chowdhury
, Yuhao Zhang, Jori Lemettinen, Tomás Palacios:
Materials and Technology Issues for the Next Generation of Power Electronic Devices. DRC 2020: 1-2 - [c5]Ahmad Zubair, Joshua A. Perozek, John Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios:
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. DRC 2020: 1-2
2010 – 2019
- 2018
- [j8]Maria Ruzzarin
, Matteo Meneghini
, Carlo De Santi
, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. 88-90: 620-626 (2018) - [j7]Charles Mackin
, Elaine McVay, Tomás Palacios:
Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors 18(2): 494 (2018) - [c4]Maria Ruzzarin
, Matteo Meneghini
, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4 - 2017
- [j6]Eyal Aklimi
, Daniel Piedra, Kevin Tien, Tomás Palacios, Kenneth L. Shepard:
Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter. IEEE J. Solid State Circuits 52(6): 1618-1627 (2017) - 2015
- [c3]M. P. King, Jeramy Ray Dickerson, S. DasGupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios:
Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. IRPS 2015: 2 - 2013
- [j5]Elias Towe, Tomás Palacios, Maki Suemitsu:
Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue]. Proc. IEEE 101(7): 1518-1521 (2013) - [j4]Allen Hsu, Han Wang, Yong Cheol Shin, Benjamin Mailly, Xu Zhang
, Lili Yu, Yumeng Shi
, Yi Hsien Lee, Madan Dubey, Ki Kang Kim, Jing Kong, Tomás Palacios:
Large-Area 2-D Electronics: Materials, Technology, and Devices. Proc. IEEE 101(7): 1638-1652 (2013) - 2012
- [c2]Daniel Piedra, Hyung-Seok Lee, Tomás Palacios, Xiang Gao, Shiping Guo:
Scaling of InAlN/GaN power transistors. ESSDERC 2012: 314-317 - [c1]Nick L. Marcoux, Christopher J. Fisher, Doug White, John Lachapelle, Tomás Palacios, Omair Saadat, Sameer Sonkusale:
A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers. MWSCAS 2012: 53-56 - 2010
- [j3]Tomás Palacios, Allen Hsu, Han Wang:
Applications of graphene devices in RF communications. IEEE Commun. Mag. 48(6): 122-128 (2010) - [j2]Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo:
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. 50(6): 767-773 (2010)
2000 – 2009
- 2006
- [j1]Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan
, Umesh K. Mishra, Jim S. Speck:
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. 89-C(7): 906-912 (2006)
Coauthor Index
![](https://dblp1.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
Unpaywalled article links
Add open access links from to the list of external document links (if available).
Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.
Archived links via Wayback Machine
For web page which are no longer available, try to retrieve content from the of the Internet Archive (if available).
Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.
Reference lists
Add a list of references from ,
, and
to record detail pages.
load references from crossref.org and opencitations.net
Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.
Citation data
Add a list of citing articles from and
to record detail pages.
load citations from opencitations.net
Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.
OpenAlex data
Load additional information about publications from .
Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.
last updated on 2024-08-18 00:32 CEST by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint