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ORCIDTomás Palacios
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- affiliation: Massachusetts Institute of Technology, Cambridge, USA
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2020 – today
- 2024
[c18]Deniz Umut Yildirim, Jaeyoung Jung, Amr Elsakka, Giuseppe Moschetti, Miguel M. Lopez, Jonas Hansryd, Tomás Palacios, Anantha P. Chandrakasan:
A 0.7cm2 3.5GHz, -31 dBm Sensitivity Batteryless 5G Energy Harvester Backscattering Chip for Asset Identification in IoT-Enabled Warehouses. CICC 2024: 1-2- [c17]Shisong Luo, Cheng Chang
, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao:
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. DRC 2024: 1-2 - [c16]John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios:
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. DRC 2024: 1-2 - 2023
- [c15]Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios:
First Demonstration of GaN RF HEMTs on Engineered Substrate. DRC 2023: 1-2 - [c14]Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios:
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c13]Yiyue Luo, Kui Wu, Andrew Spielberg, Michael Foshey, Daniela Rus, Tomás Palacios, Wojciech Matusik:
Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting. CHI 2022: 175:1-175:13 - 2021
- [c12]Yiyue Luo, Kui Wu, Tomás Palacios, Wojciech Matusik:
KnitUI: Fabricating Interactive and Sensing Textiles with Machine Knitting. CHI 2021: 668:1-668:12 - [c11]Yiyue Luo, Yunzhu Li, Michael Foshey, Wan Shou, Pratyusha Sharma, Tomás Palacios, Antonio Torralba, Wojciech Matusik:
Intelligent Carpet: Inferring 3D Human Pose From Tactile Signals. CVPR 2021: 11255-11265 - [c10]Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios:
Performance Estimation of GaN CMOS Technology. DRC 2021: 1-2 - [c9]Joshua A. Perozek, Ahmad Zubair, Tomás Palacios:
Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz. DRC 2021: 1-2 - 2020
- [c8]Girish Rughoobur, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande:
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. DRC 2020: 1-2 - [c7]Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios:
GaN Nanowire Field Emitters with a Self-Aligned Gate Process. DRC 2020: 1-2 - [c6]Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios:
Materials and Technology Issues for the Next Generation of Power Electronic Devices. DRC 2020: 1-2 - [c5]Ahmad Zubair, Joshua A. Perozek, John Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios:
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. DRC 2020: 1-2
2010 – 2019
- 2018
- [j8]Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. 88-90: 620-626 (2018) - [j7]Charles Mackin, Elaine McVay, Tomás Palacios:
Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors 18(2): 494 (2018) - [c4]Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4 - 2017
- [j6]Eyal Aklimi, Daniel Piedra, Kevin Tien, Tomás Palacios, Kenneth L. Shepard:
Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter. IEEE J. Solid State Circuits 52(6): 1618-1627 (2017) - 2015
- [c3]M. P. King, Jeramy Ray Dickerson, S. DasGupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios:
Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. IRPS 2015: 2 - 2013
- [j5]Elias Towe, Tomás Palacios, Maki Suemitsu:
Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue]. Proc. IEEE 101(7): 1518-1521 (2013) - [j4]Allen Hsu, Han Wang, Yong Cheol Shin, Benjamin Mailly, Xu Zhang, Lili Yu, Yumeng Shi, Yi Hsien Lee, Madan Dubey, Ki Kang Kim, Jing Kong, Tomás Palacios:
Large-Area 2-D Electronics: Materials, Technology, and Devices. Proc. IEEE 101(7): 1638-1652 (2013) - 2012
- [c2]Daniel Piedra, Hyung-Seok Lee, Tomás Palacios, Xiang Gao, Shiping Guo:
Scaling of InAlN/GaN power transistors. ESSDERC 2012: 314-317 - [c1]Nick L. Marcoux, Christopher J. Fisher, Doug White, John Lachapelle, Tomás Palacios, Omair Saadat, Sameer Sonkusale:
A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers. MWSCAS 2012: 53-56 - 2010
- [j3]Tomás Palacios, Allen Hsu, Han Wang:
Applications of graphene devices in RF communications. IEEE Commun. Mag. 48(6): 122-128 (2010) - [j2]Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo:
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. 50(6): 767-773 (2010)
2000 – 2009
- 2006
- [j1]Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck:
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. 89-C(7): 906-912 (2006)
Coauthor Index
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