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2020 – today
- 2023
[j4]Peng Zou
, Zhijie Cai, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen:
Incremental 3-D Global Routing Considering Cell Movement and Complex Routing Constraints. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(6): 2016-2029 (2023)- 2022
- [c9]Huimin Wang, Xingyu Tong, Chenyue Ma, Runming Shi, Jianli Chen, Kun Wang, Jun Yu, Yao-Wen Chang:
CNN-inspired analytical global placement for large-scale heterogeneous FPGAs. DAC 2022: 637-642 - 2021
- [c8]Chenyue Ma, Yifeng Xiao, Sifei Wang, Jun Yu, Jianli Chen:
CongestNN: An Bi-Directional Congestion Prediction Framework for Large-Scale Heterogeneous FPGAs. ASICON 2021: 1-4 - [c7]Peng Zou, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen:
Late Breaking Results: Incremental 3D Global Routing Considering Cell Movement. DAC 2021: 1366-1367
2010 – 2019
- 2017
- [c6]Lining Zhang, Chenyue Ma, Mansun Chan:
A universal approach for signal dependent circuit reliability simulation. ASICON 2017: 476-479 - 2016
- [c5]Haoyuan Jiang, Chenyue Ma, Lining Zhang, Mansun Chan:
Concurrent device/circuit aging for general reliability simulations. ISIC 2016: 1-4 - 2015
- [c4]Peng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, Mansun Chan:
Investigation of nitrogen enhanced NBTI effect using the universal prediction model. IRPS 2015: 5 - 2013
- [j3]Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch:
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. 96-C(10): 1339-1347 (2013) - 2011
- [j2]Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang:
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. Microelectron. Reliab. 51(2): 337-341 (2011) - 2010
- [j1]Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang:
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device. Microelectron. Reliab. 50(8): 1077-1080 (2010) - [c3]Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin:
Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits. ISQED 2010: 432-436
2000 – 2009
- 2009
- [c2]Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan:
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. ISQED 2009: 7-12 - 2008
- [c1]Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang:
Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure. ISQED 2008: 531-536
Coauthor Index
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