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"Advantage of further scaling in gate dielectrics below 0.5 nm of ..."

Kuniyuki Kakushima et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.02.001

access: closed

type: Journal Article

metadata version: 2021-10-14

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Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La₂O₃ gate dielectrics. Microelectron. Reliab. 50(6): 790-793 (2010)

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