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"Improvement of high-voltage junction termination extension (JTE) by an ..."

Cesare Ronsisvalle, Vincenzo Enea (2010)

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DOI: 10.1016/J.MICROREL.2010.07.078

access: closed

type: Journal Article

metadata version: 2022-04-26

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Cesare Ronsisvalle, Vincenzo Enea:
Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD). Microelectron. Reliab. 50(9-11): 1773-1777 (2010)

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