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Gaudenzio Meneghesso
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- affiliation: University of Padova, Italy
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2020 – today
- 2024
- [c44]M. Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. IRPS 2024: 1-5 - [c43]Davide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. IRPS 2024: 1-4 - [c42]Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS 2024: 1-5 - [c41]Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra:
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS 2024: 5 - [c40]A. Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. IRPS 2024: 17 - 2023
- [c39]Davide Favero
, A. Cavaliere, Carlo De Santi
, Matteo Borga
, W. Gonçalez Filho, Karen Geens
, Benoit Bakeroot
, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - [c38]Manuel Fregolent
, Alberto Marcuzzi, Carlo De Santi
, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS 2023: 1-5 - [c37]Zhan Gao
, Francesca Chiocchetta, Fabiana Rampazzo, Carlo De Santi
, Mirko Fornasier
, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
:
Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. IRPS 2023: 1-5 - 2022
- [c36]Fabrizio Masin, Carlo De Santi
, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni
, Peter Moens, Matteo Meneghini:
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS 2022: 5 - [c35]Nicola Modolo, Carlo De Santi
, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
Modeling Hot-Electron Trapping in GaN-based HEMTs. IRPS 2022: 10 - [c34]Francesca Chiocchetta, Carlo De Santi
, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa
, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS 2022: 11 - [c33]Davide Favero
, Carlo De Santi
, Kalparupa Mukherjee, Karen Geens
, Matteo Borga
, Benoit Bakeroot
, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - [c32]Zhan Gao
, Francesca Chiocchetta, Carlo De Santi
, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1 - 2021
- [j98]Nicola Trivellin
, Matteo Buffolo
, Carlo De Santi
, Matteo Meneghini
, Michele Forzan
, Fabrizio Dughiero
, Enrico Zanoni
, Gaudenzio Meneghesso
:
Full Optical Contactless Thermometry Based on LED Photoluminescence. IEEE Trans. Instrum. Meas. 70: 1-8 (2021) - [c31]Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi
, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni
:
Charge Trapping in GaN Power Transistors: Challenges and Perspectives. BCICTS 2021: 1-4 - [c30]Nicola Trivellin, Matteo Buffolo
, Carlo De Santi
, Enrico Zanoni
, Gaudenzio Meneghesso, Matteo Meneghini:
Current crowding as a major cause for InGaN LED degradation at extreme high current density. IECON 2021: 1-6 - [c29]Francesca Chiocchetta, Claudia Calascione, Carlo De Santi
, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
:
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS 2021: 1-2 - [c28]Elena Fabris
, Matteo Borga
, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
:
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS 2021: 1-8 - [c27]Nicola Modolo
, Andrea Minetto, Carlo De Santi
, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. IRPS 2021: 1-5 - [c26]Aby-Gaël Viey
, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo:
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS 2021: 1-8 - 2020
- [c25]Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi
, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS 2020: 1-4 - [c24]Kalparupa Mukherjee, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini, Shuzhen You, Karen Geens
, Matteo Borga, Benoit Bakeroot
, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5 - [c23]Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan
, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
, Giovanni Verzellesi
:
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS 2020: 1-5 - [c22]Enrico Zanoni
, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann
, Michél Simon-Najasek, David Poppitz:
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. IRPS 2020: 1-10
2010 – 2019
- 2019
- [c21]Eleonora Canato, Fabrizio Masin, Matteo Borga
, Enrico Zanoni
, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens:
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS 2019: 1-6 - [c20]Eric E. Fabris, Matteo Meneghini, Carlo De Santi
, Matteo Borga
, Gaudenzio Meneghesso, Enrico Zanoni
, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda
:
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS 2019: 1-6 - [c19]Maria Ruzzarin
, Matteo Borga
, Enrico Zanoni
, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
:
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS 2019: 1-5 - [c18]Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
, Andrea Natale Tallarico
, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga
, Elena Fabris
, Matteo Meneghini, Enrico Zanoni
, Gaudenzio Meneghesso, Juraj Priesol
, Alexander Satka
:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - [c17]Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni
, Gaudenzio Meneghesso:
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS 2019: 1-6 - [c16]Aby-Gaël Viey
, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso:
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS 2019: 1-6 - 2018
- [j97]Gaudenzio Meneghesso, Matteo Meneghini
, Carlo De Santi
, Maria Ruzzarin
, Enrico Zanoni
:
Positive and negative threshold voltage instabilities in GaN-based transistors. Microelectron. Reliab. 80: 257-265 (2018) - [j96]Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo
:
Editorial. Microelectron. Reliab. 88-90: 1 (2018) - [j95]Mehdi Rzin
, Alessandro Chini, Carlo De Santi
, Matteo Meneghini
, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. 88-90: 397-401 (2018) - [j94]Eric E. Fabris, Matteo Meneghini
, Carlo De Santi
, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni
:
Degradation of GaN-on-GaN vertical diodes submitted to high current stress. Microelectron. Reliab. 88-90: 568-571 (2018) - [j93]Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini
, Arno Stockman, Peter Moens, Enrico Zanoni
, Gaudenzio Meneghesso:
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. 88-90: 572-576 (2018) - [j92]Matteo Borga
, Matteo Meneghini
, Steve Stoffels
, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni
, Gaudenzio Meneghesso:
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. 88-90: 584-588 (2018) - [j91]Maria Ruzzarin
, Matteo Meneghini
, Carlo De Santi
, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. 88-90: 620-626 (2018) - [j90]Matteo Buffolo
, M. Pietrobon, Carlo De Santi
, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini
:
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. Microelectron. Reliab. 88-90: 855-858 (2018) - [j89]Desiree Monti
, Matteo Meneghini
, Carlo De Santi
, Agata Bojarska
, Piotr Perlin
, Gaudenzio Meneghesso, Enrico Zanoni
:
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. Microelectron. Reliab. 88-90: 864-867 (2018) - [j88]Nicola Trivellin
, Desiree Monti, Carlo De Santi
, Matteo Buffolo
, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini
:
Current induced degradation study on state of the art DUV LEDs. Microelectron. Reliab. 88-90: 868-872 (2018) - [j87]N. Renso, Matteo Buffolo
, Carlo De Santi
, M. Ronzani, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini
:
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. Microelectron. Reliab. 88-90: 887-890 (2018) - [j86]Nicola Trivellin
, Diego Barbisan, Denis Badocco, Paolo Pastore, Gaudenzio Meneghesso
, Matteo Meneghini
, Enrico Zanoni
, Giuseppe Belgioioso, Angelo Cenedese
:
Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project. Sensors 18(4): 1130 (2018) - [c15]Maria Ruzzarin
, Matteo Meneghini
, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4 - [c14]Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini
, Gaudenzio Meneghesso, Enrico Zanoni
, Peter Moens, Benoit Bakeroot
:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4 - 2017
- [j85]Alaleh Tajalli, Matteo Meneghini
, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni
, Gaudenzio Meneghesso:
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. 76-77: 282-286 (2017) - [j84]Isabella Rossetto, Matteo Meneghini
, Eleonora Canato, Marco Barbato, Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico
, Gaudenzio Meneghesso, Enrico Zanoni
:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017) - [j83]N. Renso, Matteo Meneghini
, Matteo Buffolo
, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
:
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. Microelectron. Reliab. 76-77: 556-560 (2017) - [j82]Carlo De Santi
, Matteo Meneghini
, Alessandro Caria
, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni
, Gaudenzio Meneghesso:
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. Microelectron. Reliab. 76-77: 575-578 (2017) - [j81]Desiree Monti
, Matteo Meneghini
, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
, Agata Bojarska
, Piotr Perlin
:
Long-term degradation of InGaN-based laser diodes: Role of defects. Microelectron. Reliab. 76-77: 584-587 (2017) - [j80]M. Silvestrini, Marco Barbato, Sonia Costantini, L. Castoldi, Federico Vercesi, Luigi Zanotti, Gaudenzio Meneghesso:
Long-term stresses on linear micromirrors for pico projector application. Microelectron. Reliab. 76-77: 626-630 (2017) - 2016
- [j79]Gaudenzio Meneghesso, Matteo Meneghini
, Davide Bisi
, Isabella Rossetto, Tian-Li Wu
, Marleen Van Hove, Denis Marcon, Steve Stoffels
, Stefaan Decoutere, Enrico Zanoni
:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - [j78]Matteo Meneghini
, Oliver Hilt
, Clément Fleury
, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser
, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni
, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - [j77]Isabella Rossetto, Matteo Meneghini
, Vanessa Rizzato, Maria Ruzzarin
, Andrea Favaron, Steve Stoffels
, Marleen Van Hove, Niels Posthuma, Tian-Li Wu
, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
:
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016) - [j76]Matteo Buffolo
, Matteo Meneghini
, Carlo De Santi
, Henry Felber, N. Renso, Gaudenzio Meneghesso, Enrico Zanoni
:
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. Microelectron. Reliab. 64: 610-613 (2016) - [j75]Marco La Grassa, Matteo Meneghini
, Carlo De Santi
, Enrico Zanoni
, Gaudenzio Meneghesso:
Degradation of InGaN-based LEDs related to charge diffusion and build-up. Microelectron. Reliab. 64: 614-616 (2016) - [j74]Carlo De Santi
, Matteo Meneghini
, Gaudenzio Meneghesso, Enrico Zanoni
:
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. Microelectron. Reliab. 64: 623-626 (2016) - 2015
- [j73]Davide Bisi
, Antonio Stocco, Isabella Rossetto, Matteo Meneghini
, Fabiana Rampazzo, Alessandro Chini
, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador
, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni
:
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1662-1666 (2015) - [j72]Isabella Rossetto, Matteo Meneghini
, Davide Bisi
, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu
, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
:
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55(9-10): 1692-1696 (2015) - [j71]Matteo Buffolo
, Carlo De Santi
, Matteo Meneghini
, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni
:
Long-term degradation mechanisms of mid-power LEDs for lighting applications. Microelectron. Reliab. 55(9-10): 1754-1758 (2015) - [j70]Carlo De Santi
, Matteo Dal Lago, Matteo Buffolo
, Desiree Monti, Matteo Meneghini
, Gaudenzio Meneghesso, Enrico Zanoni
:
Failure causes and mechanisms of retrofit LED lamps. Microelectron. Reliab. 55(9-10): 1765-1769 (2015) - [j69]Marco La Grassa, Matteo Meneghini
, Carlo De Santi
, Marco Mandurrino
, Michele Goano
, Francesco Bertazzi
, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni
:
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Microelectron. Reliab. 55(9-10): 1775-1778 (2015) - [j68]Nicola Wrachien, Nicolò Lago
, Antonio Rizzo
, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini
, Gaudenzio Meneghesso, Andrea Cester
:
Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics. Microelectron. Reliab. 55(9-10): 1790-1794 (2015) - [c13]Gaudenzio Meneghesso, Matteo Meneghini
, Enrico Zanoni
, Piet Vanmeerbeek, Peter Moens:
Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT 2015: 1-4 - [c12]Matteo Meneghini
, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi
, Enrico Zanoni
, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens:
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS 2015: 2 - [c11]Marco Barbato
, Matteo Meneghini
, Andrea Cester
, Alessandro Barbato, Enrico Zanoni
, Gaudenzio Meneghesso, Giovanna Mura
, D. Tonini, A. Voltan, Giorgio Cellere:
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells. IRPS 2015: 3 - [c10]Andrea Cester, Nicola Wrachien, Massimiliano Bon, Gaudenzio Meneghesso, Roberta Bertani, Roberto Tagliaferro, Simone Casolucci, Thomas M. Brown, Andrea Reale, Aldo Di Carlo:
Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects. IRPS 2015: 3 - [c9]Carlo De Santi
, Matteo Dal Lago, Matteo Buffolo
, Matteo Meneghini
, Gaudenzio Meneghesso, Enrico Zanoni
:
Analysis of the mechanisms limiting the reliability of retrofit LED lamps. RTSI 2015: 1-4 - [c8]Nicola Trivellin, Matteo Meneghini
, Marco Ferretti, Diego Barbisan, Matteo Dal Lago, Gaudenzio Meneghesso, Enrico Zanoni
:
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting. RTSI 2015: 154-156 - 2014
- [j67]Alessandro Chini
, Gaudenzio Meneghesso, Alessio Pantellini, Claudio Lanzieri, Enrico Zanoni
:
Reliability Investigation of GaN HEMTs for MMICs Applications. Micromachines 5(3): 570-582 (2014) - [j66]Matteo Meneghini
, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato
, Nicola Trivellin
, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi
, Gaudenzio Meneghesso, Enrico Zanoni
:
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. Microelectron. Reliab. 54(6-7): 1143-1149 (2014) - [j65]Nicola Wrachien, Andrea Cester
, Nicolò Lago
, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini
:
Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states. Microelectron. Reliab. 54(9-10): 1638-1642 (2014) - [j64]Matteo Dal Lago, Matteo Meneghini
, Carlo De Santi
, Marco Barbato
, Nicola Trivellin
, Gaudenzio Meneghesso, Enrico Zanoni
:
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. Microelectron. Reliab. 54(9-10): 2138-2141 (2014) - [j63]Carlo De Santi
, Matteo Meneghini
, Michael Marioli, Matteo Buffolo
, Nicola Trivellin
, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni
:
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. Microelectron. Reliab. 54(9-10): 2147-2150 (2014) - [j62]Antonio Stocco, Simone Gerardin
, Davide Bisi
, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini
, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014) - [j61]Alessandro Chini
, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini
, Enrico Zanoni
:
Traps localization and analysis in GaN HEMTs. Microelectron. Reliab. 54(9-10): 2222-2226 (2014) - [j60]Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini
, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
:
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014) - [j59]Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini
, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni
:
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. 54(9-10): 2248-2252 (2014) - [c7]Marco Barbato
, Andrea Cester
, Viviana Mulloni
, Benno Margesin, Giorgio De Pasquale
, Aurelio Somà
, Gaudenzio Meneghesso:
Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures. ESSDERC 2014: 70-73 - [c6]F. Medjdoub, E. Okada, Bertrand Grimbert, D. Ducatteau, Riccardo Silvestri, Matteo Meneghini
, Enrico Zanoni
, Gaudenzio Meneghesso:
High performance high reliability AlN/GaN DHFET. ESSDERC 2014: 146-149 - [c5]Nicola Wrachien, Andrea Cester
, Nicolò Lago
, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini
:
Effects of constant voltage stress on organic complementary logic inverters. ESSDERC 2014: 298-301 - [c4]Fabio Alessio Marino, Davide Bisi
, Matteo Meneghini
, Giovanni Verzellesi
, Enrico Zanoni
, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels
, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - [c3]Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin
, Matteo Meneghini
, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella
, Gaudenzio Meneghesso, Enrico Zanoni
, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage:
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC 2014: 381-384 - [c2]Davide Bisi
, Antonio Stocco, Matteo Meneghini
, Fabiana Rampazzo, Andrea Cester
, Gaudenzio Meneghesso, Enrico Zanoni
:
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC 2014: 389-392 - 2013
- [j58]Clément Fleury
, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt
, Domenica Visalli, Gaudenzio Meneghesso
, Enrico Zanoni
, Joachim Würfl, Joff Derluyn
, Gottfried Strasser
, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013) - [j57]Isabella Rossetto, Matteo Meneghini
, Gaudenzio Meneghesso
, Enrico Zanoni
:
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. Microelectron. Reliab. 53(9-11): 1456-1460 (2013) - [j56]Alessandro Chini
, Fabio Soci, Fausto Fantini
, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso
, Enrico Zanoni
:
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. Microelectron. Reliab. 53(9-11): 1461-1465 (2013) - [j55]Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini
, Enrico Zanoni
, Gaudenzio Meneghesso
:
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectron. Reliab. 53(9-11): 1476-1480 (2013) - [j54]Simone Vaccari, Matteo Meneghini
, Alessio Griffoni, Diego Barbisan, Marco Barbato
, S. Carraro, Marco La Grassa, Gaudenzio Meneghesso
, Enrico Zanoni
:
ESD characterization of multi-chip RGB LEDs. Microelectron. Reliab. 53(9-11): 1510-1513 (2013) - [j53]Matteo Dal Lago, Matteo Meneghini
, Nicola Trivellin
, Giovanna Mura
, Massimo Vanzi, Gaudenzio Meneghesso
, Enrico Zanoni
:
"Hot-plugging" of LED modules: Electrical characterization and device degradation. Microelectron. Reliab. 53(9-11): 1524-1528 (2013) - [j52]Carlo De Santi
, Matteo Meneghini
, S. Carraro, Simone Vaccari, Nicola Trivellin
, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso
, Enrico Zanoni
:
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. Microelectron. Reliab. 53(9-11): 1534-1537 (2013) - [j51]Nicola Wrachien, Andrea Cester
, Daniele Bari, Raffaella Capelli
, Riccardo D'Alpaos, Michele Muccini
, Andrea Stefani, Guido Turatti, Gaudenzio Meneghesso
:
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric. Microelectron. Reliab. 53(9-11): 1798-1803 (2013) - [j50]Daniele Bari, Nicola Wrachien, R. Tagliaferro, Thomas M. Brown
, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso
, Andrea Cester:
Comparison between positive and negative constant current stress on dye-sensitized solar cells. Microelectron. Reliab. 53(9-11): 1804-1808 (2013) - [j49]Alessandro Compagnin, Matteo Meneghini
, Marco Barbato
, Valentina Giliberto, Andrea Cester
, Massimo Vanzi, Giovanna Mura
, Enrico Zanoni
, Gaudenzio Meneghesso
:
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells. Microelectron. Reliab. 53(9-11): 1809-1813 (2013) - [c1]Davide Bisi
, Matteo Meneghini
, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni
, Gaudenzio Meneghesso:
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC 2013: 61-64 - 2012
- [j48]Matteo Meneghini
, Matteo Dal Lago, Nicola Trivellin
, Giovanna Mura
, Massimo Vanzi, Gaudenzio Meneghesso
, Enrico Zanoni
:
Chip and package-related degradation of high power white LEDs. Microelectron. Reliab. 52(5): 804-812 (2012) - [j47]Matteo Meneghini
, Matteo Dal Lago, L. Rodighiero, Nicola Trivellin
, Enrico Zanoni
, Gaudenzio Meneghesso
:
Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. Microelectron. Reliab. 52(8): 1621-1626 (2012) - [j46]Mauro Ciappa, Paolo Cova
, Francesco Iannuzzo
, Gaudenzio Meneghesso
:
Editorial. Microelectron. Reliab. 52(9-10): 1751-1752 (2012) - [j45]Giorgio De Pasquale
, Marco Barbato
, Valentina Giliberto, Gaudenzio Meneghesso
, Aurelio Somà
:
Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation. Microelectron. Reliab. 52(9-10): 1808-1811 (2012) - [j44]Isabella Rossetto, Matteo Meneghini
, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso
, Enrico Zanoni
:
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. Microelectron. Reliab. 52(9-10): 2093-2097 (2012) - [j43]Alessandro Chini
, Fabio Soci, Fausto Fantini
, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi
, Gaudenzio Meneghesso
, Enrico Zanoni
:
Field plate related reliability improvements in GaN-on-Si HEMTs. Microelectron. Reliab. 52(9-10): 2153-2158 (2012) - [j42]Matteo Dal Lago, Matteo Meneghini
, Nicola Trivellin
, Giovanna Mura
, Massimo Vanzi, Gaudenzio Meneghesso
, Enrico Zanoni
:
Phosphors for LED-based light sources: Thermal properties and reliability issues. Microelectron. Reliab. 52(9-10): 2164-2167 (2012) - [j41]Paul Marko, Matteo Meneghini
, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso
, Enrico Zanoni
, Dionyz Pogany:
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(9-10): 2194-2199 (2012) - [j40]Anna Persano
, Augusto Tazzoli, Paola Farinelli, Gaudenzio Meneghesso
, Pietro Siciliano
, Fabio Quaranta:
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability. Microelectron. Reliab. 52(9-10): 2245-2249 (2012) - [j39]Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini
, Enrico Zanoni
, Oliver Hilt
, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012) - [j38]Nicola Wrachien, Daniel Bari, Jaroslav Kovác, Jan Jakabovic, Daniel Donoval
, Gaudenzio Meneghesso
, Andrea Cester
:
Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure. Microelectron. Reliab. 52(9-10): 2490-2494 (2012) - [j37]Daniele Bari, Nicola Wrachien, Roberto Tagliaferro, Thomas M. Brown
, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso
, Andrea Cester:
Reliability study of dye-sensitized solar cells by means of solar simulator and white LED. Microelectron. Reliab. 52(9-10): 2495-2499 (2012) - 2011
- [j36]Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni
, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso
:
ESD sensitivity of a GaAs MMIC microwave power amplifier. Microelectron. Reliab. 51(9-11): 1602-1607 (2011) - [j35]Matteo Dal Lago, Matteo Meneghini
, Nicola Trivellin
, Gaudenzio Meneghesso
, Enrico Zanoni
:
Degradation mechanisms of high-power white LEDs activated by current and temperature. Microelectron. Reliab. 51(9-11): 1742-1746 (2011) - [j34]Nicola Trivellin
, Matteo Meneghini
, Carlo De Santi
, Simone Vaccari, Gaudenzio Meneghesso
, Enrico Zanoni
, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda:
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. Microelectron. Reliab. 51(9-11): 1747-1751 (2011) - [j33]Daniele Bari, Nicola Wrachien, R. Tagliaferro, Stefano Penna, Thomas M. Brown
, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso
, Andrea Cester:
Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs). Microelectron. Reliab. 51(9-11): 1762-1766 (2011) - [j32]Jacopo Iannacci
, Alessandro Faes, A. Repchankova, Augusto Tazzoli, Gaudenzio Meneghesso
:
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches. Microelectron. Reliab. 51(9-11): 1869-1873 (2011) - [j31]A. Massenz, Marco Barbato
, Valentina Giliberto, Benno Margesin, S. Colpo, Gaudenzio Meneghesso
:
Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test. Microelectron. Reliab. 51(9-11): 1887-1891 (2011) - 2010
- [j30]Matteo Meneghini
, Nicola Trivellin
, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni
, Gaudenzio Meneghesso
:
Reliability evaluation for Blu-Ray laser diodes. Microelectron. Reliab. 50(4): 467-470 (2010) - [j29]Augusto Tazzoli, Martina Cordoni, Paolo Colombo, C. Bergonzoni, Gaudenzio Meneghesso
:
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform. Microelectron. Reliab. 50(9-11): 1373-1378 (2010) - [j28]Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso
, Enrico Zanoni
, Fausto Fantini
, Alessandro Chini
:
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. Microelectron. Reliab. 50(9-11): 1523-1527 (2010) - [j27]Matteo Meneghini
, Diego Barbisan, Y. Bilenko, Maxim S. Shatalov, J. Yang, R. Gaska, Gaudenzio Meneghesso
, Enrico Zanoni
:
Defect-related degradation of Deep-UV-LEDs. Microelectron. Reliab. 50(9-11): 1538-1542 (2010) - [j26]Jacopo Iannacci
, A. Repchankova, Alessandro Faes, Augusto Tazzoli, Gaudenzio Meneghesso
, Gian-Franco Dalla Betta
:
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism. Microelectron. Reliab. 50(9-11): 1599-1603 (2010) - [j25]Augusto Tazzoli, Marco Barbato
, F. Mattiuzzo, V. Ritrovato, Gaudenzio Meneghesso
:
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches. Microelectron. Reliab. 50(9-11): 1604-1608 (2010) - [j24]Andrea Cester
, Daniele Bari, J. Framarin, Nicola Wrachien, Gaudenzio Meneghesso
, S. Xia, V. Adamovich, J. J. Brown:
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED. Microelectron. Reliab. 50(9-11): 1866-1870 (2010)
2000 – 2009
- 2009
- [j23]Augusto Tazzoli, Lorenzo Cerati, A. Andreini, Gaudenzio Meneghesso
:
Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology. Microelectron. Reliab. 49(9-11): 1111-1115 (2009) - [j22]Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni
, Gaudenzio Meneghesso
:
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. Microelectron. Reliab. 49(9-11): 1207-1210 (2009) - [j21]Nicola Trivellin
, Matteo Meneghini
, Gaudenzio Meneghesso
, Enrico Zanoni
, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda:
Reliability analysis of InGaN Blu-Ray laser diode. Microelectron. Reliab. 49(9-11): 1236-1239 (2009) - 2008
- [j20]Francesca Danesin, Augusto Tazzoli, Franco Zanon, Gaudenzio Meneghesso
, Enrico Zanoni
, Antonio Cetronio, Claudio Lanzieri, Simone Lavanga, Marco Peroni
, Paolo Romanini:
Thermal storage effects on AlGaN/GaN HEMT. Microelectron. Reliab. 48(8-9): 1361-1365 (2008) - [j19]Augusto Tazzoli, Gaudenzio Meneghesso
, Franco Zanon, Francesca Danesin, Enrico Zanoni
, Philippe Bove, R. Langer, J. Thorpe:
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields. Microelectron. Reliab. 48(8-9): 1370-1374 (2008) - 2007
- [j18]Augusto Tazzoli, Fabio Alessio Marino, Martina Cordoni, A. Benvenuti, Paolo Colombo, Enrico Zanoni
, Gaudenzio Meneghesso
:
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology. Microelectron. Reliab. 47(9-11): 1444-1449 (2007) - [j17]Matteo Meneghini
, Lorenzo Trevisanello, C. Sanna, Giovanna Mura
, Massimo Vanzi, Gaudenzio Meneghesso
, Enrico Zanoni
:
High temperature electro-optical degradation of InGaN/GaN HBLEDs. Microelectron. Reliab. 47(9-11): 1625-1629 (2007) - [j16]Mustapha Faqir, Giovanni Verzellesi
, Fausto Fantini
, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso
, Enrico Zanoni
, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2006
- [j15]Tetsuya Suemitsu
, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso
, Enrico Zanoni
:
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electron. Express 3(13): 310-315 (2006) - [j14]Matteo Meneghini
, Simona Podda, A. Morelli, Ruggero Pintus
, L. Trevisanello, Gaudenzio Meneghesso
, Massimo Vanzi, Enrico Zanoni
:
High brightness GaN LEDs degradation during dc and pulsed stress. Microelectron. Reliab. 46(9-11): 1720-1724 (2006) - [j13]Francesca Danesin, Franco Zanon, Simone Gerardin
, Fabiana Rampazzo, Gaudenzio Meneghesso
, Enrico Zanoni
, Alessandro Paccagnella
:
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 46(9-11): 1750-1753 (2006) - 2005
- [j12]Giovanni Verzellesi
, Gaudenzio Meneghesso
, Alessandro Chini
, Enrico Zanoni
, Claudio Canali:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. Microelectron. Reliab. 45(9-11): 1585-1592 (2005) - [j11]Augusto Tazzoli, Gaudenzio Meneghesso
, Enrico Zanoni
:
A novel fast and versatile temperature measurement system for LDMOS transistors. Microelectron. Reliab. 45(9-11): 1742-1745 (2005) - 2004
- [j10]Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière
, Didier Théron
, Bertrand Boudart, Gaudenzio Meneghesso
, Enrico Zanoni
:
Hot carrier aging degradation phenomena in GaN based MESFETs. Microelectron. Reliab. 44(9-11): 1375-1380 (2004) - [j9]Chiara Corvasce, Mauro Ciappa, Davide Barlini, S. Sponton, Gaudenzio Meneghesso
, Wolfgang Fichtner:
Characterization of self-heating effects in semiconductor resistors during transmission line pulses. Microelectron. Reliab. 44(9-11): 1873-1878 (2004) - 2003
- [j8]Gaudenzio Meneghesso
, N. Novembre, Enrico Zanoni
, Luca Sponton, Lorenzo Cerati, Giuseppe Croce:
Optimization of ESD protection structures suitable for BCD6 smart power technology. Microelectron. Reliab. 43(9-11): 1589-1594 (2003) - [j7]Gaudenzio Meneghesso
, S. Levada, Enrico Zanoni
, Gaetano Scamarcio
, Giovanna Mura
, Simona Podda, Massimo Vanzi, S. Du, I. Eliashevich:
Reliability of visible GaN LEDs in plastic package. Microelectron. Reliab. 43(9-11): 1737-1742 (2003) - 2002
- [j6]Gaudenzio Meneghesso
, Enrico Zanoni
:
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors. Microelectron. Reliab. 42(4-5): 685-708 (2002) - [j5]Gaudenzio Meneghesso, A. Cocco, Giovanna Mura
, Simona Podda, Massimo Vanzi:
Backside Failure Analysis of GaAs ICs after ESD tests. Microelectron. Reliab. 42(9-11): 1293-1298 (2002) - [j4]Luca Sponton, Lorenzo Cerati, Giuseppe Croce, Giovanna Mura
, Simona Podda, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni
:
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology. Microelectron. Reliab. 42(9-11): 1303-1306 (2002) - 2001
- [j3]Gaudenzio Meneghesso
, Gaudenzio Chini, Enrico Zanoni
:
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs. Microelectron. Reliab. 41(9-10): 1579-1584 (2001) - [j2]Gaudenzio Meneghesso
, Simona Podda, Massimo Vanzi:
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs. Microelectron. Reliab. 41(9-10): 1609-1614 (2001) - [j1]Luca Sponton, Lorenzo Cerati, Giuseppe Croce, Francesco Chrappan, Claudio Contiero, Gaudenzio Meneghesso
, Enrico Zanoni
:
ESD protection structures for BCD5 smart power technologies. Microelectron. Reliab. 41(9-10): 1683-1687 (2001)
Coauthor Index
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