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Publication search results
found 349 matches
- 2010
- Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo:
IGBT RBSOA non-destructive testing methods: Analysis and discussion. Microelectron. Reliab. 50(9-11): 1731-1737 (2010) - Mansur Ahmed, Tama Fouzder, Ahmed Sharif, Asit Kumar Gain, Y. C. Chan:
Influence of Ag micro-particle additions on the microstructure, hardness and tensile properties of Sn-9Zn binary eutectic solder alloy. Microelectron. Reliab. 50(8): 1134-1141 (2010) - A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun:
Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectron. Reliab. 50(12): 1961-1966 (2010) - F. Alagi:
DMOS FET parameter drift kinetics from microscopic modeling. Microelectron. Reliab. 50(1): 57-62 (2010) - Carlos Algora:
Reliability of III-V concentrator solar cells. Microelectron. Reliab. 50(9-11): 1193-1198 (2010) - Ya. I. Alivov, Qian Fan, Xianfeng Ni, Sergey A. Chevtchenko, I. B. Bhat, Hadis Morkoç:
n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor. Microelectron. Reliab. 50(12): 2090-2092 (2010) - K.-H. Allers:
Intrinsic and extrinsic reliability of a serial connection of capacitors. Microelectron. Reliab. 50(6): 881-886 (2010) - Joaquín Alvarado, El Hafed Boufouss, Valeria Kilchytska, Denis Flandre:
Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectron. Reliab. 50(9-11): 1852-1856 (2010) - Robin Alastair Amy, Guglielmo S. Aglietti, Guy Richardson:
Accuracy of simplified printed circuit board finite element models. Microelectron. Reliab. 50(1): 86-97 (2010) - Elena Atanassova, Nenad Novkovski, Albena Paskaleva, D. Spassov:
Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. Microelectron. Reliab. 50(6): 794-800 (2010) - A. Aubert, J. P. Rebrasse, Lionel Dantas de Morais, Nathalie Labat, Hélène Frémont:
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. Microelectron. Reliab. 50(9-11): 1688-1691 (2010) - Jean-Luc Autran, Daniela Munteanu, Philippe Roche, Gilles Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, Evgeny Yakushev, S. Rozov, Pia Loaiza, G. Warot, M. Zampaolo:
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. Microelectron. Reliab. 50(9-11): 1822-1831 (2010) - Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Giorgio Cellere, F. Irom, D. N. Nguyen:
Destructive events in NAND Flash memories irradiated with heavy ions. Microelectron. Reliab. 50(9-11): 1832-1836 (2010) - Paolo Emilio Bagnoli, Yabin Zhang:
Electro-thermal simulation of metal interconnections under high current flow. Microelectron. Reliab. 50(9-11): 1672-1677 (2010) - Raphael Baillot, Yannick Deshayes, Laurent Béchou, T. Buffeteau, I. Pianet, C. Armand, F. Voillot, S. Sorieul, Yves Ousten:
Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses. Microelectron. Reliab. 50(9-11): 1568-1573 (2010) - Muhammad Bashir, Linda S. Milor, Dae Hyun Kim, Sung Kyu Lim:
Methodology to determine the impact of linewidth variation on chip scale copper/low-k backend dielectric breakdown. Microelectron. Reliab. 50(9-11): 1341-1346 (2010) - Rodrigo Possamai Bastos, Gilles Sicard, Fernanda Lima Kastensmidt, Marc Renaudin, Ricardo Reis:
Asynchronous circuits as alternative for mitigation of long-duration transient faults in deep-submicron technologies. Microelectron. Reliab. 50(9-11): 1241-1246 (2010) - Reinhold Bayerer:
Advanced packaging yields higher performance and reliability in power electronics. Microelectron. Reliab. 50(9-11): 1715-1719 (2010) - Mohamed Ali Belaïd, K. Daoud:
Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors. Microelectron. Reliab. 50(9-11): 1763-1767 (2010) - M. Bellotti, R. Mariani:
How future automotive functional safety requirements will impact microprocessors design. Microelectron. Reliab. 50(9-11): 1320-1326 (2010) - Yassine Belmehdi, Stephane Azzopardi, Jean-Yves Delétage, Eric Woirgard:
Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature. Microelectron. Reliab. 50(9-11): 1815-1821 (2010) - Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov:
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectron. Reliab. 50(3): 360-364 (2010) - Mirko Bernardoni, Nicola Delmonte, Paolo Cova, Roberto Menozzi:
Thermal modeling of planar transformer for switching power converters. Microelectron. Reliab. 50(9-11): 1778-1782 (2010) - Fulvio Bertoluzza, Paolo Cova, Nicola Delmonte, Pietro Pampili, Marco Portesine:
Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing. Microelectron. Reliab. 50(9-11): 1720-1724 (2010) - Roland Biberger, Guenther Benstetter, Holger Goebel, Alexander Hofer:
Intermittent-contact capacitance spectroscopy - A new method for determining C(V) curves with sub-micron lateral resolution. Microelectron. Reliab. 50(9-11): 1511-1513 (2010) - Xavier Boddaert, B. Bensaid, Patrick Benaben, Romain Gwoziecki, Romain Coppard:
Mechanical and thermal reliability of printed organic thin-film transistor. Microelectron. Reliab. 50(9-11): 1884-1887 (2010) - Oana Boncalo, Alexandru Amaricai, Mihai Udrescu, Mircea Vladutiu:
Quantum circuit's reliability assessment with VHDL-based simulated fault injection. Microelectron. Reliab. 50(2): 304-311 (2010) - Mahyar Boostandoost, Uwe Kerst, Christian Boit:
Extraction of local thin-film solar cell parameters by bias-dependent IR-LBIC. Microelectron. Reliab. 50(9-11): 1899-1902 (2010) - B. Bouabdallah, Y. Bourezig, B. Benichou:
Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode. Microelectron. Reliab. 50(3): 447-453 (2010) - M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah:
Ageing of SiC JFET transistors under repetitive current limitation conditions. Microelectron. Reliab. 50(9-11): 1532-1537 (2010)
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