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2010 – 2019
- 2013
[j15]Alessandro Chini
, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. Microelectron. Reliab. 53(9-11): 1461-1465 (2013)- 2012
- [j14]Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni:
Field plate related reliability improvements in GaN-on-Si HEMTs. Microelectron. Reliab. 52(9-10): 2153-2158 (2012) - 2010
- [j13]Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini:
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50(9-11): 1520-1522 (2010) - [j12]Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini:
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. Microelectron. Reliab. 50(9-11): 1523-1527 (2010)
2000 – 2009
- 2008
- [j11]Giovanna Mura, G. Cassanelli, Fausto Fantini, Massimo Vanzi:
Sulfur-contamination of high power white LED. Microelectron. Reliab. 48(8-9): 1208-1211 (2008) - 2007
- [j10]Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2006
- [j9]G. Cassanelli, Giovanna Mura, Fausto Fantini, Massimo Vanzi, Bernard Plano:
Failure Analysis-assisted FMEA. Microelectron. Reliab. 46(9-11): 1795-1799 (2006) - 2005
- [j8]G. Cassanelli, Giovanna Mura, F. Cesaretti, Massimo Vanzi, Fausto Fantini:
Reliability predictions in electronic industrial applications. Microelectron. Reliab. 45(9-11): 1321-1326 (2005) - 2004
- [j7]Simona Podda, G. Cassanelli, Fausto Fantini, Massimo Vanzi:
Failure Analysis of RuO2 Thick Film Chip Resistors. Microelectron. Reliab. 44(9-11): 1763-1767 (2004) - 2003
- [j6]G. Cassanelli, Fausto Fantini, G. Serra, S. Sgatti:
Reliability in automotive electronics: a case study applied to diesel engine control. Microelectron. Reliab. 43(9-11): 1411-1416 (2003) - [j5]J. Kuchenbecker, Mattia Borgarino, M. Zeuner, U. König, Robert Plana, Fausto Fantini:
High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT's. Microelectron. Reliab. 43(9-11): 1719-1723 (2003) - 2002
- [j4]Fausto Fantini, Massimo Vanzi:
Editorial. Microelectron. Reliab. 42(9-11): 1249 (2002) - [j3]V. Lista, P. Garbossa, T. Tomasi, Mattia Borgarino, Fausto Fantini, L. Gherardi, A. Righetti, M. Villa:
Degradation Based Long-Term Reliability Assessment for Electronic Components in Submarine Applications. Microelectron. Reliab. 42(9-11): 1389-1392 (2002) - 2001
- [j2]Mattia Borgarino, Roberto Menozzi, D. Dieci, L. Cattani, Fausto Fantini:
Reliability physics of compound semiconductor transistors for microwave applications. Microelectron. Reliab. 41(1): 21-30 (2001)
1990 – 1999
- 1990
- [j1]Giovanni Soncini, Claudio Canali, Enrico Zanoni, Francrsco Cors, Alessandro Diligenti, Fausto Fantini, Vito A. Monaco, Guido Masetti, Carlo Morandi:
VLSI reliability: Contributions from a three year national research program. Eur. Trans. Telecommun. 1(2): 209-220 (1990)
1980 – 1989
- 1989
- [p1]Jan Van der Spiegel, G. Kreider, C. Claeys, I. Debusschere, G. Sandini, Paolo Dario, Fausto Fantini, P. Bellutti, Giovanni Soncini:
A Foveated Retina-Like Sensor Using CCD Technology. Analog VLSI Implementation of Neural Systems 1989: 189-211
Coauthor Index
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