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ORCIDJesús A. del Alamo
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2020 – today
- 2022
[j16]O. Murat Onen, Tayfun Gokmen, Teodor K. Todorov, Tomasz Nowicki, Jesús A. del Alamo, John Rozen, Wilfried Haensch, Seyoung Kim:
Neural Network Training With Asymmetric Crosspoint Elements. Frontiers Artif. Intell. 5: 891624 (2022)- [c7]Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo:
Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. IRPS 2022: 21-1 - [i1]O. Murat Onen, Tayfun Gokmen, Teodor K. Todorov, Tomasz Nowicki, Jesús A. del Alamo, John Rozen, Wilfried Haensch, Seyoung Kim:
Neural Network Training with Asymmetric Crosspoint Elements. CoRR abs/2201.13377 (2022) - 2021
- [c6]Jesús A. del Alamo, Xiaowei Cai, Xin Zhao, Alon Vardi, Jesús Grajal:
Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport. ESSDERC 2021: 203-206
2010 – 2019
- 2019
- [j15]Neus Vidal
, José María López-Villegas, Jesús A. del Alamo:
Analysis and Optimization of Multi-Winding Toroidal Inductors for Use in Multilayered Technologies. IEEE Access 7: 93537-93544 (2019) - [c5]Ethan S. Lee, Luis Hurtado, Jungwoo Joh, Srikanth Krishnan, Sameer Pendharkar, Jesús A. del Alamo:
Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs. IRPS 2019: 1-5 - 2015
- [c4]Alex Guo, Jesús A. del Alamo:
Positive-bias temperature instability (PBTI) of GaN MOSFETs. IRPS 2015: 6 - 2014
- [j14]Yufei Wu, Chia-Yu Chen, Jesús A. del Alamo:
Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress. Microelectron. Reliab. 54(12): 2668-2674 (2014) - 2013
- [c3]Jesús A. del Alamo:
Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies. ESSCIRC 2013: 16-21 - [c2]Jesús A. del Alamo:
Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies. ESSDERC 2013: 16-21 - 2012
- [j13]Jungwoo Joh, Jesús A. del Alamo:
Impact of gate placement on RF power degradation in GaN high electron mobility transistors. Microelectron. Reliab. 52(1): 33-38 (2012) - [j12]Donghyun Jin, Jesús A. del Alamo:
Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs. Microelectron. Reliab. 52(12): 2875-2879 (2012) - [c1]Shreya Malani, G. N. Srinivasa Prasanna, Jesús A. del Alamo, James L. Hardison, Kannan M. Moudgalya, Venkatesh Chopella:
Issues Faced in a Remote Instrumentation Laboratory. T4E 2012: 67-74 - 2011
- [j11]Jungwoo Joh, Jesús A. del Alamo, Kurt Langworthy, Sujing Xie, Tsvetanka Zheleva:
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors. Microelectron. Reliab. 51(2): 201-206 (2011) - 2010
- [j10]Takayuki Hisaka, Hajime Sasaki, Takayuki Kato, Ko Kanaya, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo:
Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC. IEICE Electron. Express 7(8): 558-562 (2010) - [j9]Usha Gogineni, Hongmei Li, Jesús A. del Alamo, Susan L. Sweeney, Jing Wang, Basanth Jagannathan:
Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices. IEEE J. Solid State Circuits 45(5): 998-1006 (2010) - [j8]Sefa Demirtas, Jungwoo Joh, Jesús A. del Alamo:
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate. Microelectron. Reliab. 50(6): 758-762 (2010) - [j7]Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo:
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. 50(6): 767-773 (2010)
2000 – 2009
- 2009
- [j6]Hamidou Soumare, Rahul Shroff, James L. Hardison, Jesús A. del Alamo, V. Judson Harward, Philip H. Bailey, Kirky K. DeLong:
A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities. Int. J. Online Eng. 5(S1): 72-80 (2009) - [j5]Jesús A. del Alamo, Jungwoo Joh:
GaN HEMT reliability. Microelectron. Reliab. 49(9-11): 1200-1206 (2009) - [j4]Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi:
Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. Microelectron. Reliab. 49(12): 1515-1519 (2009) - 2008
- [j3]V. Judson Harward, Jesús A. del Alamo, Steven R. Lerman, Philip H. Bailey, Joel Carpenter, Kimberly DeLong, Chris Felknor, James L. Hardison, Bryant Harrison, Imad Jabbour, Phillip D. Long, Tingting Mao, Loai Naamani, Jedidiah Northridge, Mark Schulz, Daniel Talavera, Charuleka Varadharajan, Shaomin Wang, Karim Yehia, Rabih Zbib, David Zych:
The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories. Proc. IEEE 96(6): 931-950 (2008) - 2007
- [j2]Jesús A. del Alamo:
Book "Advances on remote laboratories and e-learning experiences". Int. J. Online Eng. 3(3) (2007)
1990 – 1999
- 1999
- [j1]Jesús A. del Alamo, Mark H. Somerville:
Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's. IEEE J. Solid State Circuits 34(9): 1204-1211 (1999)
Coauthor Index
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