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Joachim Würfl
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2020 – today
- 2022
- [j16]Yi-Fan Tsao
, Heng-Shou Hsu
, Joachim Würfl
, Heng-Tung Hsu
:
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications. IEEE Access 10: 77826-77836 (2022) - 2021
- [c4]Oliver Hilt
, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl:
GaN-channel HEMTs with AlN buffer for high-voltage switching. DRC 2021: 1-2 - 2020
- [c3]Eldad Bahat-Treidel
, Oliver Hilt
, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl:
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC 2020: 1-2
2010 – 2019
- 2018
- [c2]Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl:
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. IEEE SENSORS 2018: 1-3 - 2016
- [j15]Matteo Meneghini
, Oliver Hilt
, Clément Fleury
, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser
, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni
, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - [j14]Eldad Bahat-Treidel, Oliver Hilt
, O. Bahat Treidel, Joachim Würfl:
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64: 556-559 (2016) - 2015
- [j13]Clément Fleury
, Mattia Capriotti, Matteo Rigato, Oliver Hilt
, Joachim Würfl, Joff Derluyn
, Stephan Steinhauer
, Anton Köck, Gottfried Strasser
, Dionyz Pogany:
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55(9-10): 1687-1691 (2015) - [c1]Mattia Capriotti, Clément Fleury
, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser
, Eldad Bahat-Treidel
, Oliver Hilt, Frank Brunner, Joachim Würfl:
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63 - 2014
- [j12]Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy
, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit:
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. Microelectron. Reliab. 54(6-7): 1288-1292 (2014) - [j11]Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl:
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54(9-10): 2191-2195 (2014) - 2013
- [j10]Clément Fleury
, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt
, Domenica Visalli, Gaudenzio Meneghesso
, Enrico Zanoni
, Joachim Würfl, Joff Derluyn
, Gottfried Strasser
, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013) - 2012
- [j9]Richard Lossy
, Hervé Blanck, Joachim Würfl:
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52(9-10): 2144-2148 (2012) - [j8]Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini
, Enrico Zanoni
, Oliver Hilt
, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012) - 2011
- [j7]Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy
, Joachim Würfl, Christian Boit, Günther Tränkle:
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51(2): 217-223 (2011) - [j6]Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt
, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy
, Matthias Schulz, S. Singwald, Markus Weyers
, Rimma Zhytnytska:
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51(9-11): 1710-1716 (2011) - 2010
- [j5]Reza Pazirandeh, Joachim Würfl, Günther Tränkle:
Determination of GaN HEMT reliability by monitoring IDSS. Microelectron. Reliab. 50(6): 763-766 (2010)
2000 – 2009
- 2009
- [j4]Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy
, Joachim Würfl, Günther Tränkle:
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49(9-11): 1211-1215 (2009) - 2004
- [j3]A. Sozza
, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy
, Joachim Würfl:
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44(9-11): 1369-1373 (2004) - 2003
- [j2]Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers
:
Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. Microelectron. Reliab. 43(6): 839-844 (2003) - 2001
- [j1]Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph
, Markus Weyers
:
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. Microelectron. Reliab. 41(8): 1103-1108 (2001)
Coauthor Index
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