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ORCIDFelix Palumbo
Person information
- affiliation: National Technological University, Buenos Aires, Argentina
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Journal Articles
- 2020
[j6]Fernando Leonel Aguirre
, Sebastián Matías Pazos, Felix Palumbo, Jordi Suñé, Enrique Miranda:
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. IEEE Access 8: 202174-202193 (2020)- 2018
- [j5]Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira:
Performance-reliability trade-offs in short range RF power amplifier design. Microelectron. Reliab. 88-90: 38-42 (2018) - 2016
- [j4]Felix Palumbo, Salvatore Lombardo, Moshe Eizenberg:
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks. Microelectron. Reliab. 56: 22-28 (2016) - 2010
- [j3]Sebania Libertino, Domenico Corso, G. Murè, A. Marino, Felix Palumbo, Fabio Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, Michael Lisiansky, Yakov Roizin, Salvatore Lombardo:
Radiation effects in nitride read-only memories. Microelectron. Reliab. 50(9-11): 1857-1860 (2010) - 2008
- [j2]R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis:
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectron. Reliab. 48(11-12): 1759-1764 (2008) - 2005
- [j1]Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang:
Structure of the oxide damage under progressive breakdown. Microelectron. Reliab. 45(5-6): 845-848 (2005)
Conference and Workshop Papers
- 2021
- [c9]Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, N. Gomez, Enrique Miranda, Jordi Suñé:
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition. LASCAS 2021: 1-4 - 2019
- [c8]Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo:
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS 2019: 1-8 - 2018
- [c7]Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg:
Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks. IRPS 2018: 3-1 - [c6]Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Xu Jing, Mario Lanza, Felix Palumbo:
Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity. IRPS 2018: 6-1 - [c5]Andrés Fontana, Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Nahuel Vega, Nahuel A. Müller, Emanuel de la Fourniere, Mario Debray:
Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp. SBCCI 2018: 1-5 - 2015
- [c4]Felix Palumbo, Moshe Eizenberg, Salvatore Lombardo:
General features of progressive breakdown in gate oxides: A compact model. IRPS 2015: 5 - 2013
- [c3]Santiago Martin Sondón, Pablo Sergio Mandolesi, Favio R. Masson, Pedro Julián, Felix Palumbo:
A dual core low power microcontroller with openMSP430 architecture for high reliability lockstep applications using a 180 nm high voltage technology node. LASCAS 2013: 1-4 - [c2]Santiago Martin Sondón, Alfredo Falcon, Pablo Sergio Mandolesi, Pedro Julián, Nahuel Vega, Francisco Nesprias, Jorge Davidson, Felix Palumbo, Mario Debray:
Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam. LATW 2013: 1-5 - 2009
- [c1]Santiago Martin Sondón, Pablo Sergio Mandolesi, Pedro Julián, Felix Palumbo, Martin Alurralde, Alberto Filevich:
Radiation damage characterization of digital integrated circuits. LATW 2009: 1-5
Coauthor Index
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