Microelectronics Reliability, Volume 55

Volume 55, Number 1, January 2015

Introductory Invited Papers

• 
  Juli Blasco, Nestor Fabian Ghenzi, Jordi Suñé, Pablo Levy, Enrique Miranda:
  Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films. 1-14
• 
  Meng Miao, Yuanzhong Paul Zhou, Javier A. Salcedo, Jean-Jacques Hajjar, Juin J. Liou:
  Compact failure modeling for devices subject to electrostatic discharge stresses - A review pertinent to CMOS reliability simulation. 15-23
• 
  Marta Bagatin, Simone Gerardin:
  Soft errors in floating gate memory cells: A review. 24-30

Research Papers

• 
  Nguyen Dang Chien, Chun-Hsing Shih:
  Short-channel effect and device design of extremely scaled tunnel field-effect transistors. 31-37
• 
  Edward Namkyu Cho, Yong-Hyeon Shin, Ilgu Yun:
  An analytical avalanche breakdown model for double gate MOSFET. 38-41
• 
  Hai-fan Hu, Ying Wang, Hao Lan, Xin Luo, Yun-Tao Liu:
  High performance SOI CMOS pixel sensor with surrounding N+ trench electrode. 42-47
• 
  Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Jen-Inn Chyi, Geng-Yen Lee:
  N₂O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO₂ High-k insulator. 48-51
• 
  Sandra Pralgauskaite, Vilius Palenskis, Jonas Matukas, Justinas Glemza, Grigorij Muliuk, Bronius Saulys, Augustinas Trinkunas:
  Reliability investigation of light-emitting diodes via low frequency noise characteristics. 52-61
• 
  Hui Zhu, Kun Liu, Cong Xiong, Shiwei Feng, Chunsheng Guo:
  The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes. 62-65
• 
  Wenliang Zhu, Giuseppe Pezzotti:
  Raman spectroscopic assessments of structural orientation and residual stress in wurtzitic AlN film deposited on (0 0 1) Si. 66-73
• 
  Wei Chang, Chun-Hsing Shih, Yan-Xiang Luo, Wen-Fa Wu, Chen-Hsin Lien:
  Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories. 74-80
• 
  François Forest, Amgad Rashed, Jean-Jacques Huselstein, Thierry Martiré, Philippe Enrici:
  Fast power cycling protocols implemented in an automated test bench dedicated to IGBT module ageing. 81-92
• 
  Sanna Lahokallio, Kirsi Saarinen-Pulli, Laura Frisk:
  Effects of different test profiles of temperature cycling tests on the reliability of RFID tags. 93-100
• 
  Sijie Cheng, Zhongzhi Yuan, Xiangping Ye, Fuyi Zhang, Jincheng Liu:
  Empirical prediction model for Li/SOCl₂ cells based on the accelerated degradation test. 101-106
• 
  Jiann-Shiun Yuan, Yu Bi:
  Process and temperature robust voltage multiplier design for RF energy harvesting. 107-113
• 
  Ilgeun Oh, Myeongjin Kim, Jooheon Kim:
  Deposition of Fe₃O₄ on oxidized activated carbon by hydrazine reducing method for high performance supercapacitor. 114-122
• 
  Wenjin Zhang, Shunli Liu, Bo Sun, Yue Liu, Michael G. Pecht:
  A cloud model-based method for the analysis of accelerated life test data. 123-128
• 
  Daniel Kurz, Horst Lewitschnig, Jürgen Pilz:
  An advanced area scaling approach for semiconductor burn-in. 129-137
• 
  Gilbert De Mey, Mariusz Felczak, Boguslaw Wiecek:
  Modelling and IR measurement of the electronic substrate thermal conductivity. 138-142
• 
  Michal Jablonski, Riccardo Lucchini, Frederick Bossuyt, Thomas Vervust, Jan Vanfleteren, J. W. C. DeVries, Pasquale Vena, Mario Gonzalez:
  Impact of geometry on stretchable meandered interconnect uniaxial tensile extension fatigue reliability. 143-154
• 
  Vobulapuram Ramesh Kumar, Brajesh Kumar Kaushik, Amalendu Patnaik:
  Crosstalk noise modeling of multiwall carbon nanotube (MWCNT) interconnects using finite-difference time-domain (FDTD) technique. 155-163
• 
  Sabeur Msolli, Joël Alexis, Olivier Dalverny, Moussa Karama:
  Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications. 164-171
• 
  Yeong K. Kim, Do Soon Hwang:
  PBGA packaging reliability assessments under random vibrations for space applications. 172-179
• 
  Mark Ashworth, Geoffrey D. Wilcox, Rebecca L. Higginson, Richard J. Heath, Chanqing Liu, Roger J. Mortimer:
  The effect of electroplating parameters and substrate material on tin whisker formation. 180-191
• 
  Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage, Bernard Plano:
  Electro- and thermomigration induced Cu₃Sn and Cu₆Sn₅ formation in SnAg_3.0Cu_0.5 bumps. 192-200
• 
  Nhat Ly, Di Erick Xu, Wan Ho Song, Michael Mayer:
  More uniform Pd distribution in free-air balls of Pd-coated Cu bonding wire using movable flame-off electrode. 201-206
• 
  Hirohiko Endoh, Takuya Naoe:
  Copper wire bonding package decapsulation using the anodic protection method. 207-212
• 
  Lei Su, Tielin Shi, Li Du, Xiangning Lu, Guanglan Liao:
  Genetic algorithms for defect detection of flip chips. 213-220
• 
  Cheng-fu Chen, Sheng-Tsai Wu:
  Equivalent mechanical properties of through silicon via interposers - A unit model approach. 221-230
• 
  Hsiu-Min Lin, Cheng-Ying Ho, Wen-Lin Chen, Yi-Hsin Wu, De-Hui Wang, Jun-Ren Lin, Yu-Hui Wu, Huei-Cheng Hong, Zhi-Wei Lin, Jenq-Gong Duh:
  Interfacial reaction and mechanical evaluation in multi-level assembly joints with ENEPIG under bump metallization via drop and high speed impact test. 231-237
• 
  Ghaith Bany Hamad, Syed Rafay Hasan, Otmane Aït Mohamed, Yvon Savaria:
  Characterizing, modeling, and analyzing soft error propagation in asynchronous and synchronous digital circuits. 238-250
• 
  Jiajia Jiao, Da-Cheng Juan, Diana Marculescu, Yuzhuo Fu:
  Exploiting component dependency for accurate and efficient soft error analysis via Probabilistic Graphical Models. 251-263
• 
  Vahid Hamiyati Vaghef, Ali Peiravi:
  Node-to-node error sensitivity analysis using a graph based approach for VLSI logic circuits. 264-271
• 
  Tatjana R. Nikolic, Goran S. Nikolic, Mile K. Stojcev, Zoran Stamenkovic:
  Low-power fault-tolerant interconnect method based on LCDMA and duplication. 272-281
• 
  Behzad Eghbalkhah, Mehdi Kamal, Ali Afzali-Kusha, Mohammad Bagher Ghaznavi Ghoushchi, Massoud Pedram:
  CSAM: A clock skew-aware aging mitigation technique. 282-290

Corrigendum

• 
  Luowei Zhou, Junke Wu, Pengju Sun, Xiong Du:
  Corrigendum to "Junction temperature management of IGBT module in power electronic converters" [Microelectron. Reliab. 54 (2014) 2788-2795]. 291

Volume 55, Number 2, February 2015

• 
  Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci, Andrea Sucre-González, Juin J. Liou:
  A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction. 293-307
• 
  Chih-Hsiang Ho, Soo Youn Kim, Kaushik Roy:
  Ultra-thin dielectric breakdown in devices and circuits: A brief review. 308-317
• 
  Ying Wang, Chan Shan, Zheng Dou, Liguo Wang, Fei Cao:
  Improved performance of nanoscale junctionless transistor based on gate engineering approach. 318-325
• 
  Sayani Ghosh, Kalyan Koley, Chandan Kumar Sarkar:
  Impact of the lateral straggle on the Analog and RF performance of TFET. 326-331
• 
  Ko-Chun Lee, Ming-Long Fan, Pin Su:
  Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation. 332-336
• 
  Meng Chuan Lee, Hin Yong Wong:
  Investigation on the origin of the anomalous tail bits on nitrided charge trap flash memory. 337-341
• 
  Y. Huang, Jing-Ping Xu, L. S. Wang, S. Y. Zhu:
  A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric. 342-346
• 
  Cen Tang, Gang Xie, Kuang Sheng:
  Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT. 347-351
• 
  Chih-Jen Yu, Ching-Hung Hung, Kuei-Chu Hsu, Chien Chou:
  Phase-shift imaging ellipsometer for measuring thin-film thickness. 352-357
• 
  Carmen G. Almudéver, Antonio Rubio:
  Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections. 358-366
• 
  A. A. Dakhel, Seamas Cassidy, Khalil E. Jasim, Fryad Zeki Henari:
  Synthesis and characterisation of curcumin-M (M = B, Fe and Cu) films grown on p-Si substrate for dielectric applications. 367-373
• 
  Nabeeh Kandalaft, Ali Attaran, Rashid Rashidzadeh:
  High speed test interface module using MEMS technology. 374-382
• 
  Nur Hasyimah Hashim, P. Anithambigai, D. Mutharasu:
  Thermal characterization of high power LED with ceramic particles filled thermal paste for effective heat dissipation. 383-388
• 
  Krzysztof Górecki:
  Modelling mutual thermal interactions between power LEDs in SPICE. 389-395
• 
  Yuan Yue, Shiwei Feng, Chunsheng Guo, Xin Yan, Rui-Rui Feng:
  All-digital thermal distribution measurement on field programmable gate array using ring oscillators. 396-401
• 
  Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
  Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. 402-406
• 
  Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
  Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. 407-410
• 
  Takuya Naoe:
  Case study: Root cause of fluorine detection during TiN ARC layer corrosion of AlSiCu metal lines. 411-417
• 
  Chunsheng Zhu, Heng Li, Gaowei Xu, Le Luo:
  A novel mechanical diced trench structure for warpage reduction in wafer level packaging process. 418-423
• 
  Chunyan Yin, Chris Best, Chris Bailey, Stoyan Stoyanov:
  Statistical analysis of the impact of refinishing process on leaded components. 424-431
• 
  Jiwon Shin, Il Kim, Yong-Won Choi, Young Soon Kim, Un Byung Kang, Young Kun Jee, Kyung-Wook Paik:
  Non-conductive film with Zn-nanoparticles (Zn-NCF) for 40 μm pitch Cu-pillar/Sn-Ag bump interconnection. 432-441
• 
  YongHyuk Kwon, HeeSeon Bang, Sungmin Joo, HanSur Bang:
  Numerical analysis of thermo-mechanical characteristics of solder joint depending on change in solder junction structure of MCP. 442-447
• 
  Mohsen Raji, Hossein Pedram, Behnam Ghavami:
  A practical metric for soft error vulnerability analysis of combinational circuits. 448-460
• 
  Ivica Manic:
  Microwave Engineering: Concepts and Fundamentals, Ahmad Shahid Khan. CRC Press Taylor & Francis Group, Boca Raton (2014). 800 p., Hardcover, ISBN: 9781466591417. 461

Volume 55, Numbers 3-4, February-March 2015

• 
  Chunlei Wu, Suying Yao, Corinne Bergès:
  Leakage current study and relevant defect localization in integrated circuit failure analysis. 463-469
• 
  A. S. N. Pereira, Renato C. Giacomini:
  An accurate closed-expression model for FinFETs parasitic resistance. 470-480
• 
  Chie-In Lee, Wei-Cheng Lin:
  MOSFET channel resistance characterization from the triode region to impact ionization region with the inductive breakdown network. 481-485
• 
  Xiangming Xu, Jingfeng Huang, Han Yu, Biao Ma, Peng-Fei Wang, David Wei Zhang:
  Elimination of stress induced dislocation in deep Poly Sinker LDMOS technology. 486-491
• 
  Hatice Gül Sezgin, Yasin Özçelep:
  Characterization and modeling of power MOSFET switching times variations under constant electrical stress. 492-497
• 
  Gerhard G. Fischer, Grazia Sasso:
  Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions. 498-507
• 
  Cunbo Zhang, Jian-de Zhang, Honggang Wang, Guangxing Du:
  Burnout properties of microwave pulse injected on GaAs PHEMT. 508-513
• 
  Cen Xiong, Shuhuan Liu, Yonghong Li, Du Tang, Jinxin Zhang, Xuecheng Du, Chaohui He:
  Hot carrier effect on the bipolar transistors' response to electromagnetic interference. 514-519
• 
  Yang Wang, Xiangliang Jin, Liu Yang, Qi Jiang, Huihui Yuan:
  Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection. 520-526
• 
  Moon-Hwan Chang, Peter Sandborn, Michael G. Pecht, Winco K. C. Yung, Wenbin Wang:
  A return on investment analysis of applying health monitoring to LED lighting systems. 527-537
• 
  Atif Alkhazaili, Mohammad M. Hamasha, Gihoon Choi, Susan Lu, Charles R. Westgate:
  Reliability of thin films: Experimental study on mechanical and thermal behavior of indium tin oxide and poly(3, 4-ethylenedioxythiophene). 538-546
• 
  Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir:
  Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions. 547-551
• 
  Emre Özkol, Franziska Brem, Chunlei Liu:
  Improving the power cycling performance of IGBT modules by plating the emitter contact. 552-557
• 
  Koushik Dutta, Basanta Bhowmik, Arnab Hazra, Partha P. Chattopadhyay, Partha Bhattacharyya:
  An efficient BTX sensor based on p-type nanoporous titania thin films. 558-564
• 
  Choon-W. Nahm:
  Degradation behavior by DC-accelerated and pulse-current stress in Co/Cr/Y/Al/Ni co-doped ZnO-PrO_1.83-based varistors. 565-571
• 
  Seongjun Lee, Jonghoon Kim, Bo-Hyung Cho:
  Maximum pulse current estimation for high accuracy power capability prediction of a Li-Ion battery. 572-581
• 
  Elviz George, Michael D. Osterman, Michael G. Pecht:
  An evaluation of dwell time and mean cyclic temperature parameters in the Engelmaier model. 582-587
• 
  Ee-Hua Wong:
  The fundamentals of thermal-mass diffusion analogy. 588-595
• 
  Li Yang, Yaocheng Zhang, Chengchao Du, Jun Dai, Ning Zhang:
  Effect of aluminum concentration on the microstructure and mechanical properties of Sn-Cu-Al solder alloy. 596-601
• 
  J. Gomes, M. Mayer, Bill S. Lin:
  Development of a fast method for optimization of Au ball bond process. 602-607
• 
  Yi-Wei Tseng, Fei-Yi Hung, Truan-Sheng Lui:
  Microstructure, tensile and electrical properties of gold-coated silver bonding wire. 608-612
• 
  Xue-Ru Guo, Wen-Bin Young:
  Vacuum effect on the void formation of the molded underfill process in flip chip packaging. 613-622
• 
  Wenguo Zhang, Jian-hua Ma, Li-Lan Gao, Zhe Zhang, Hong Gao:
  Fatigue life and resistance analysis of COG assemblies under hygrothermal aging. 623-629
• 
  Cheng-Han Wu, Weng-Sing Hwang:
  The effect of the echo-time of a bipolar pulse waveform on molten metallic droplet formation by squeeze mode piezoelectric inkjet printing. 630-636
• 
  Qi Jiang, Huihui Yuan, Yang Wang, Xiangliang Jin:
  Design and analyze of transient-induced latch-up in RS485 transceiver with on-chip TVS. 637-644
• 
  Hao Cai, You Wang, Kaikai Liu, Lirida Alves de Barros Naviner, Hervé Petit, Jean-François Naviner:
  Cross-layer investigation of continuous-time sigma-delta modulator under aging effects. 645-653
• 
  Anna Richelli, Gilbert Matig-a, Jean-Michel Redoute:
  Design of a folded cascode opamp with increased immunity to conducted electromagnetic interference in 0.18 μm CMOS. 654-661
• 
  Arwa Ben Dhia, Mariem Slimani, Hao Cai, Lirida A. B. Naviner:
  A dual-rail compact defect-tolerant multiplexer. 662-670
• 
  Pawel Leczycki, Artur Andrzejczak, Piotr Pietrzak, Bartosz Pekoslawski, Andrzej Napieralski:
  Extended Sensor Reliability Evaluation Method in multi-sensor control systems. 671-678
• 
  Mohsen Jahanshahi, Fathollah Bistouni:
  Improving the reliability of the Benes network for use in large-scale systems. 679-695
• 
  Ting An, Kaikai Liu, Hao Cai, Lirida A. B. Naviner:
  Accurate reliability analysis of concurrent checking circuits employing an efficient analytical method. 696-703
• 
  Atin Mukherjee, Anindya Sundar Dhar:
  Real-time fault-tolerance with hot-standby topology for conditional sum adder. 704-712

Volume 55, Number 5, April 2015

Special Section: Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2014). Guest Editor: Professor Artur Wymyslowski

• 
  Artur Wymyslowski:
  Guest Editorial: 2014 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems. 713-715
• 
  Frank Kraemer, Steffen Wiese:
  Assessment of long term reliability of photovoltaic glass-glass modules vs. glass-back sheet modules subjected to temperature cycles by FE-analysis. 716-721
• 
  Michael Edwards, Klas Brinkfeldt, Ulrich Rusche, Tobias Bukes, Gerd Gaiser, Melina Da Silva, Dag Andersson:
  The shear strength of nano-Ag sintered joints and the use of Ag interconnects in the design and manufacture of SiGe-based thermo-electric modules. 722-732
• 
  S. Watzke, P. Altieri-Weimar:
  Degradation of silicone in white LEDs during device operation: a finite element approach to product reliability prediction. 733-737
• 
  Benjamin Vianne, Pierre Bar, Vincent Fiori, Sébastien Gallois-Garreignot, Komi-Atchou Ewuame, Pascal Chausse, Stéphanie Escoubas, Nicolas Hotellier, Olivier Thomas:
  Thermo-mechanical characterization of passive stress sensors in Si interposer. 738-746
• 
  M. Kudryavtsev, Evgenii B. Rudnyi, Jan G. Korvink, Dennis Hohlfeld, Tamara Bechtold:
  Computationally efficient and stable order reduction methods for a large-scale model of MEMS piezoelectric energy harvester. 747-757
• 
  Dawid Jan Król, Artur Wymyslowski, Kamil Nouri Allaf:
  Adhesion work analysis through molecular modeling and wetting angle measurement. 758-764
• 
  Nabi Nabiollahi, Nele Moelans, Mario Gonzalez, Joke De Messemaeker, Christopher J. Wilson, Kristof Croes, Eric Beyne, Ingrid De Wolf:
  Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling. 765-770

Research Articles

• 
  Jinling Wang, Shengkui Zeng, Vadim V. Silberschmidt, Jianbin Guo:
  Multiphysics modeling approach for micro electro-thermo-mechanical actuator: Failure mechanisms coupled analysis. 771-782
• 
  Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck, Christian Renaux, Denis Flandre:
  Diamond layout style impact on SOI MOSFET in high temperature environment. 783-788
• 
  Syed Mukulika Dinara, Saptarsi Ghosh, Nripendra N. Halder, Ankush Bag, Sekhar Bhattacharya, Dhrubes Biswas:
  Potentiality of trap charge effects and SiON induced interface defects in a-Si₃N₄/SiON based MIS structure for resistive NVM device. 789-794
• 
  Pyung Moon, Jun Yeong Lim, Tae-Un Youn, Keum-Whan Noh, Ilgu Yun:
  Effect of electric field polarity on inter-poly dielectric during cell operation for the retention characteristics. 795-798
• 
  Lei Zhang, Yejun Zhu, Haibin Chen, Karina Leung, Yeqing Wu, Jingshen Wu:
  Failure analysis on reflector blackening between lead frame electrodes in LEDs under WHTOL test. 799-806
• 
  Hongge Li, Huixin Bai, Qicheng Xu, Tongsheng Xia:
  Low-power MicroV_rms noise neural spike detector for implantable interface microsystem device. 807-814
• 
  Jin-Cheol Jeong, Changsoo Kwak, In-Bok Yom, In-Jong Seo, In-Ho Jo:
  Life test of an X-band MMIC multi-function chip for active phased array radar applications. 815-821
• 
  Dao-Long Chen, Tei-Chen Chen, Ping-Feng Yang, Yi-Shao Lai:
  Thermal resistance of side by side multi-chip package: Thermal mode analysis. 822-831
• 
  Kyle Doudrick, Jeff Chinn, Jason Williams, Nikhilesh Chawla, Konrad Rykaczewski:
  Rapid method for testing efficacy of nano-engineered coatings for mitigating tin whisker growth. 832-837
• 
  Kyoungtae Eun, Min-Woo Chon, Tae-Hee Yoo, Yong-Won Song, Sung-Hoon Choa:
  Electromechanical properties of printed copper ink film using a white flash light annealing process for flexible electronics. 838-845

Letter to the Editor

• 
  M. T. Alam, K. E. Maletto, J. Bielefeld, Sean W. King, M. Aman Haque:
  Mechanical stress field assisted charge de-trapping in carbon doped oxides. 846-851

Book Review

• 
  Chong Leong Gan, Uda Hashim:
  Fundamentals of Lead-Free Solder Interconnect Technology (from Microstructures to Reliability). Springer (2015). XIII pp. 253, ISBN: 978-1-4614-9265-8 (Print), 978-1-4614-9266-5 (Online). 852

Volume 55, Number 6, May 2015

•