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"Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT."

Aby-Gaël Viey et al. (2019)

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DOI: 10.1109/IRPS.2019.8720554

access: closed

type: Conference or Workshop Paper

metadata version: 2022-01-03

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  dblp key:
  - conf/irps/VieyVJGTPGGMIMM19
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  persistent URL:
  - https://dblp.org/rec/conf/irps/VieyVJGTPGGMIMM19
Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso:
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS 2019: 1-6

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