"Single- and double-heterostructure GaN-HEMTs devices for power switching ..."

Alberto Zanandrea et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.062

access: closed

type: Journal Article

metadata version: 2024-05-07

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Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012)

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