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ORCIDMicroelectronics Reliability, Volumes 76-77
Volumes 76-77, September 2017
- Nathalie Labat, François Marc, Hélène Frémont, Marise Bafleur:
Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. 1-5
- Kirsten Weide-Zaage:
Simulation of packaging under harsh environment conditions (temperature, pressure, corrosion and radiation). 6-12
- Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix
:
Enabling robust automotive electronic components in advanced CMOS nodes. 13-24
- Amir Sajjad Bahman, Francesco Iannuzzo, T. Holmgaard, R. Ø. Nielsen, Frede Blaabjerg:
Reliability-oriented environmental thermal stress analysis of fuses in power electronics. 25-30 - Ionut Vernica, Ke Ma, Frede Blaabjerg:
Reliability assessment platform for the power semiconductor devices - Study case on 3-phase grid-connected inverter application. 31-37 - Alexander Hirler, Josef Biba, Adnan Alsioufy, T. Lehndorff, Torsten Sulima, H. Lochner, U. Abelein, Walter Hansch:
Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability. 38-41 - Abdellatif Bey-Temsamani, S. Kauffmann, Y. Descas, Bart Vandevelde, Franco Zanon, Geert Willems:
Improved and accurate physics-of-failure (PoF) methodology for qualification and lifetime assessment of electronic systems. 42-46 - Dae-Hyun Kim, Linda Milor:
Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life test. 47-52 - Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche:
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. 53-57 - Qiutao Zhang, Sarah Azimi, Germano La Vaccara, Luca Sterpone, Boyang Du:
A new approach for Total Ionizing Dose effect analysis on Flash-based FPGA. 58-63 - Martin Versen, W. Ernst, Prince Gulati:
A row hammer pattern analysis of DDR2 SDRAM. 64-67 - Raphael Andreoni Camponogara Viera, Rodrigo Possamai Bastos, Jean-Max Dutertre, Philippe Maurine, Rodrigo Iga Jadue:
Method for evaluation of transient-fault detection techniques. 68-74 - Rafael O. Nunes, R. L. de Orio:
Study of the impact of electromigration on integrated circuit performance and reliability at design level. 75-80 - Kexin Yang, Taizhi Liu, Rui Zhang, Dae Hyun Kim, Linda Milor:
Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits. 81-86 - Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor:
Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations. 87-91 - R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel:
Characterization of Low Drop-Out during ageing and design for yield. 92-96 - Dennis Helmut, Gerhard K. M. Wachutka, Gerhard Groos:
Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP). 97-101
- Peter Jacob, Roman Furrer:
A very unusual transistor failure, caused by a solenoid. 102-105 - Chinedu I. Ossai, Xuechu Xu, Qing Yang, Nagarajan Raghavan:
Uncertainty quantification in nanowire growth modeling - A precursor to quality semiconductor nanomanufacturing. 106-111 - Jae-Seong Jeong, Won-kyoung Lee, Chung-kuk Lee, Joongho Choi:
Lifetime and failure analysis of perovskite-based ceramic NTC thermistors by thermal cycling and abrasion combined stress. 112-116 - Hao Niu, Huai Wang, X. Ye, S. Wang, Frede Blaabjerg:
Converter-level FEM simulation for lifetime prediction of an LED driver with improved thermal modelling. 117-122 - Haoze Luo, Wuhua Li, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg:
Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design. 123-130
- Deniz Kocaay, Philippe Roussel, Kris Croes, Ivan Ciofi, Yves Saad, Ingrid De Wolf:
LER and spacing variability on BEOL TDDB using E-field mapping: Impact of field acceleration. 131-135 - Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs. 136-140 - Changqing Chen, Ghim Boon Ang, Peng Tiong Ng, Francis Rivai, Soh Ping Neo, Dayanand Nagalingam, Kim Hong Yip, Jeffery Lam, Zhihong Mai:
Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern. 141-144 - Vladimir Kolkovsky, Ronald Stübner, Jörg Weber:
Carbon-related defects in microelectronics. 145-148 - Rainer Duschl, Armin H. Fischer, Achim Gratz, Robert Wiesner:
Static and dynamic hot carrier accelerated TDDB: Influencing factors and impact on product lifetime. 149-153
- Luca Sterpone, Luca Boragno:
A probe-based SEU detection method for SRAM-based FPGAs. 154-158 - Thomas Rousselin, G. Hubert, Didier Regis, Marc Gatti, A. Bensoussan:
Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies. 159-163 - Seung Uk Han, Youngyoun Lee, Yongdoo Kim, Jemin Park, Junhee Lim, Satoru Yamada, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung:
The improvement of HEIP immunity using STI engineering at DRAM. 164-167 - Mariem Slimani, K. Benkalaia, Lirida A. B. Naviner:
Analysis of ageing effects on ARTIX7 XILINX FPGA. 168-173
- Jianfei Wu, Cong Li, Hongyi Wang, J. Li, Liming Zheng:
Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories. 174-177 - Alberto Rodriguez-Fernandez, Carlo Cagli, Luca Perniola, Jordi Suñé, Enrique Miranda:
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. 178-183
- Christian Boit:
Technologies for Heterogeneous Integration - Challenges and chances for fault isolation. 184-187 - Kristof J. P. Jacobs, T. Wang, Michele Stucchi, Mario Gonzalez, Kris Croes, Ingrid De Wolf, Eric Beyne:
Lock-in thermal laser stimulation for non-destructive failure localization in 3-D devices. 188-193 - Mahyar Boostandoost, Dieter Gräfje, Florin Pop:
Circuit simulation assisting Physical Fault Isolation for effective root cause analysis. 194-200 - Etienne Auvray, Paul Armagnat, Luc Saury, Maheshwaran Jothi, Michael Brügel:
Effective scan chain failure analysis method. 201-213 - Oskar Amster, Fred Stanke, Stuart Friedman, Yongliang Yang, St. John B. Dixon-Warren, B. Drevniok:
Practical quantitative scanning microwave impedance microscopy. 214-217 - Sören Hommel, Nicole Killat, A. Altes, Thomas Schweinböck, Franz Kreupl:
Determination of doping type by calibrated capacitance scanning microwave microscopy. 218-221 - Ralf Heiderhoff, T. Haeger, K. Dawada, Thomas Riedl:
From diffusive in-plane to ballistic out-of-plane heat transport in thin non-crystalline films. 222-226 - Maxime Penzes, S. Dudit, Frederic Monsieur, Luca Silvestri, F. Nallet, D. Lewis, P. Perdu:
Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies. 227-232 - Ivo Vogt, Tomonori Nakamura, Christian Boit:
Optical interaction in active analog circuit elements. 233-237 - Ahmad Khaled, Luka Kljucar, Sebastian Brand, Michael Kögel, Robert Aertgeerts, Ruben Nicasy, Ingrid De Wolf:
Study of GHz-SAM sensitivity to delamination in BEOL layers. 238-242
- N. Moultif, Eric Joubert, M. Masmoudi, Olivier Latry:
Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. 243-248 - Anthony Boscaro, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
Pattern image enhancement by automatic focus correction. 249-254 - Soh Ping Neo, Alfred C. T. Quah, Ghim Boon Ang, Dayanand Nagalingam, Hnin Hnin Ma, Siong Luong Ting, C. W. Soo, Changqing Chen, Zhihong Mai, Jeffrey Lam:
Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect. 255-260 - Changqing Chen, Ghim Boon Ang, Peng Tiong Ng, Francis Rivai, Hui Peng Ng, Alfred C. T. Quah, Angela Teo, Jeffery Lam, Zhihong Mai:
Embed SRAM IDDOFF fail root cause identification by combination of device analysis and localized circuit analysis. 261-266
- Bhagyalakshmi Kakarla, Selamnesh Nida, Johanna Mueting, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner:
Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. 267-271 - Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. 272-276 - Paolo Cova, Attahir Murtala Aliyu, Alberto Castellazzi, Diego Chiozzi, Nicola Delmonte, P. Lasserre, N. Pignoloni:
Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch. 277-281
- Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso:
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. 282-286 - Wardhana A. Sasangka, Govindo J. Syaranamual, Y. Gao, Riko I. Made, Chee Lip Gan, Carl V. Thompson:
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. 287-291 - Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek:
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. 292-297 - Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. 298-303
- Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann, David Poppitz, A. Lindemann:
Exploring the thermal limit of GaN power devices under extreme overload conditions. 304-308 - Wataru Saito, Toshiyuki Naka:
Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. 309-313 - Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. 314-320 - Thorsten Oeder, Alberto Castellazzi, Martin Pfost:
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. 321-326
- Sang Min Kim, Min-Soo Kang, Won-Ju Cho, Jong Tae Park:
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer. 327-332 - Hyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong Tae Park:
Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors. 333-337 - Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck:
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. 338-343 - Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux:
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. 344-349 - Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. 350-356
- A. Betzwar Kotas, Golta Khatibi:
Isothermal bending fatigue response of solder joints in high power semiconductor test structures. 357-361 - Wissam Sabbah, Pierre Bondue, Oriol Avino-Salvado, Cyril Buttay, Hélène Frémont, Alexandrine Guédon-Gracia, Hervé Morel:
High temperature ageing of microelectronics assemblies with SAC solder joints. 362-367 - S. Pin, Hélène Frémont, Alexandrine Guédon-Gracia:
Combined creep characterisation from single lap shear tests and 3D implementation for fatigue simulations. 368-372 - Kristian Bonderup Pedersen, Dennis A. Nielsen, Bernhard Czerny, Golta Khatibi, Francesco Iannuzzo, Vladimir N. Popok, Kjeld Pedersen:
Wire bond degradation under thermo- and pure mechanical loading. 373-377 - Mads Brincker, S. Söhl, R. Eisele, Vladimir N. Popok:
Strength and reliability of low temperature transient liquid phase bonded Cu-Sn-Cu interconnects. 378-382 - Tobias Berthold, Guenther Benstetter, Werner Frammelsberger, Manuel Bogner, Rosana Rodríguez, Montserrat Nafría:
Protective nanometer films for reliable Cu-Cu connections. 383-389 - Glenn Ross, Vesa Vuorinen, Michael Krause, S. Reissaus, Matthias Petzold, Mervi Paulasto-Kröckel:
XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connects. 390-394 - Peter Jacob, Uwe Thiemann:
New ESD challenges in RFID manufacturing. 395-399 - Ilyas Dchar, Cyril Buttay, Hervé Morel:
SiC power devices packaging with a short-circuit failure mode capability. 400-404
- Toshitaka Ishizaki, D. Miura, A. Kuno, K. Hasegawa, Masanori Usui, Y. Yamada:
Young's modulus of a sintered Cu joint and its influence on thermal stress. 405-408 - S. Kremp, O. Schilling:
Realistic climatic profiles and their effect on condensation in encapsulated test structures representing power modules. 409-414 - Haoze Luo, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg:
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. 415-419 - Min-Su Kim, Hiroshi Nishikawa:
Influence of ENIG defects on shear strength of pressureless Ag nanoparticle sintered joint under isothermal aging. 420-425 - Rik J. Otte, Rob F. Fonville, Martin D. Knotter:
Identification of foreign particles in packages of failed products by application of our modified failure analysis flow. 426-430 - Maxime Barrière, Alexandrine Guédon-Gracia, Eric Woirgard, Serge Bontemps, François Le Henaff:
Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sintering. 431-437
- Riccardo Enrici Vaion, Matteo Medda, Alberto Mancaleoni, Giovanna Mura, A. Pintus, M. De Tomasi:
Qualification extension of automotive smart power and digital ICs to harsh aerospace mission profiles: Gaps and opportunities. 438-443 - Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel:
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. 444-449 - A. Middendorf, A. Grams, S. Janzen, Klaus-Dieter Lang, Olaf Wittler:
Laser cuts increase the reliability of heavy-wire bonds and enable on-line process control using thermography. 450-454 - D. Feil, T. Herberholz, M. Guyenot, Mathias Nowottnick:
Highly variable Sn-Cu diffusion soldering process for high performance power electronics. 455-459 - Franc Dugal, Mauro Ciappa:
Reliability investigation of the copper-zinc system for solid diffusion bonding in power modules. 460-464
- Seiya Abe, Kazunori Hasegawa, Masanori Tsukuda, Keiji Wada, Ichiro Omura, Tamotsu Ninomiya:
Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications. 465-469 - Jose Angel Ortiz Gonzalez, Olayiwola Alatise:
Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs. 470-474 - Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. 475-479 - M. Junghaenel, Uwe Scheuermann:
Impact of load pulse duration on power cycling lifetime of chip interconnection solder joints. 480-484 - Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg:
Capacitive effects in IGBTs limiting their reliability under short circuit. 485-489
- Akihiko Watanabe, R. Nagao, Ichiro Omura:
Real-time imaging of temperature distribution inside a power device under a power cycling test. 490-494 - Silvan Geissmann, L. De Michielis, Chiara Corvasce, Munaf Rahimo, M. Andenna:
Extraction of dynamic avalanche during IGBT turn off. 495-499 - F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud:
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. 500-506 - R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros:
Mechanisms of power module source metal degradation during electro-thermal aging. 507-511 - Matthias Ritter, Martin Pfost:
Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress. 512-516
- Masanori Tsukuda, K. Nakashima, S. Tabata, Kazunori Hasegawa, Ichiro Omura:
Clamp type built-in current sensor using PCB in high-voltage power modules. 517-521 - Ui-Min Choi, Frede Blaabjerg, Francesco Iannuzzo:
Advanced power cycler with intelligent monitoring strategy of IGBT module under test. 522-526 - Safa Mbarek, Pascal Dherbécourt, Olivier Latry, François Fouquet:
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. 527-531 - F. Boige, Frédéric Richardeau:
Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. 532-538 - Sungyoung Song, Stig Munk-Nielsen, Christian Uhrenfeldt:
Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test. 539-543 - Philippe Pougnet, Gerard Coquery, Richard Lallemand, A. Makhloufi:
Power module thermal cycling tester for in-situ ageing detection. 544-548
Poster session F
- G. Zhang, Dao Zhou, Jian Yang, Frede Blaabjerg:
Fundamental-frequency and load-varying thermal cycles effects on lifetime estimation of DFIG power converter. 549-555
- N. Renso, Matteo Meneghini, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni:
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. 556-560 - Riko I. Made, Yu Gao, Govindo J. Syaranamual, Wardhana A. Sasangka, L. Zhang, Xuan Sang Nguyen, Y. Y. Tay, Jason Scott Herrin, Carl V. Thompson, Chee Lip Gan:
Characterisation of defects generated during constant current InGaN-on-silicon LED operation. 561-565 - Andreas Zibold, Maximilian Dammann, Ralf Schmidt, Helmer Konstanzer, Michael Kunzer:
Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects. 566-570 - Jia Lu, Zhennian Cao, ChuangJun Huang, Kunhui Xiao, Alan Street, YuFeng Dai:
Failure analysis of projected capacitance touch panel liquid crystal displays - Two case studies. 571-574 - Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso:
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. 575-578 - Massimo Vanzi, Giulia Marcello, Giovanna Mura, G. Le Galès, S. Joly, Yannick Deshayes, Laurent Béchou:
Practical optical gain by an extended Hakki-Paoli method. 579-583 - Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Agata Bojarska, Piotr Perlin:
Long-term degradation of InGaN-based laser diodes: Role of defects. 584-587 - Jorge Souto, José Luis Pura, Alfredo Torres, Juan Ignacio Jiménez López:
Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes. 588-591
- Chuntaek Park, Ilgu Yun:
Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation. 592-595