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"Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs."

Alessandro Chini et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.07.033

access: closed

type: Journal Article

metadata version: 2024-05-07

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Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. Microelectron. Reliab. 53(9-11): 1461-1465 (2013)

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