default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDMicroelectronics Reliability, Volumes 88-90
Volumes 88-90, September 2018
- Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo
:
Editorial. 1 - Wen-Chieh Chen, Ming-Dou Ker:
Surge protection design with surge-to-digital converter for microelectronic circuits and systems. 2-5 - Hassen Aziza, Basma Hajri, Mohammad M. Mansour, Ali Chehab, Annie Pérez:
A lightweight write-assist scheme for reduced RRAM variability and power. 6-10 - Ivo Vogt, Tomonori Nakamura, B. Motamedi, Christian Boit:
Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra. 11-15 - Marianne Unterreitmeier, Oliver Nagler, Lothar Pfitzner, Robert Weigel, Rainer Holmer:
An acoustic emission sensor system for thin layer crack detection. 16-21 - Elham Amini, Anne Beyreuther, Norbert Herfurth, Alexander Steigert, R. Muydinov, Bernd Szyszka, Christian Boit:
IC security and quality improvement by protection of chip backside against hardware attacks. 22-25 - Giovanna Mura:
Reliability concerns from the gray market. 26-30 - Michal Baszynski, P. Rydygier, Mariusz Wojcik:
Experimental studies of: Laminate composition, drill bit wear out, and chloride ion concentration as factors affecting CAF formation rate. 31-37 - Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira:
Performance-reliability trade-offs in short range RF power amplifier design. 38-42 - Nick Baker, Francesco Iannuzzo:
Smart SiC MOSFET accelerated lifetime testing. 43-47 - Bahar Ahmadi, Pouya Tavousi, Joseph Favata, Peiman Shahbeigi-Roodposhti, Rengarajan Pelapur, Sina Shahbazmohamadi:
A novel crowdsourcing platform for microelectronics counterfeit defect detection. 48-53 - Abdellatif Bey-Temsamani, S. Kauffmann, Stijn Helsen, T. Gaens, V. Driesen:
Physics-of-Failure (PoF) methodology for qualification and lifetime assessment of supercapacitors for industrial applications. 54-60 - Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement:
Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories. 61-66 - Morgane Mousnier, Kévin Sanchez, Elsa Locatelli, Thierry Lebey, Vincent Bley:
Lock-in thermography for defect localization and thermal characterization for space application. 67-74 - Mingyao Ma, Kaiqi Chu, Mingyue Zhan, Ye Wang, Fang Liu:
Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields. 75-79 - Pham Luu Trung Duong, Hyunseok Park, Nagarajan Raghavan:
Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes. 80-84 - Pham Luu Trung Duong, Xuechu Xu, Qing Yang, Nagarajan Raghavan:
Gaussian process regression approach for robust design and yield enhancement of self-assembled nanostructures. 85-90 - G. Prathiba, M. Santhi, A. Ahilan:
Design and implementation of reliable flash ADC for microwave applications. 91-97 - O. Dixon-Luinenburg, J. Fine:
In-situ transistor reliability measurements through nanoprobing. 98-102 - Xiaoman Sun, Meng Huang, Yi Liu, Xiaoming Zha:
Investigation of artificial neural network algorithm based IGBT online condition monitoring. 103-106 - Xuerong Ye, Yigang Lin, Qingmin Wang, Hao Niu, Guofu Zhai:
Manufacturing process-based storage degradation modelling and reliability assessment. 107-110 - Alexandra L. Zimpeck, Cristina Meinhardt, Laurent Artola, Guillaume Hubert, Fernanda Lima Kastensmidt, Ricardo Augusto da Luz Reis:
Impact of different transistor arrangements on gate variability. 111-115 - Leonardo B. Moraes, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
Evaluation of variability using Schmitt trigger on full adders layout. 116-121 - Thiago Ferreira de Paiva Leite, Laurent Fesquet, Rodrigo Possamai Bastos:
A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems. 122-127 - Raphael Andreoni Camponogara Viera, Jean-Max Dutertre, Marie-Lise Flottes, Olivier Potin, Giorgio Di Natale, Bruno Rouzeyre, Rodrigo Possamai Bastos:
Assessing body built-in current sensors for detection of multiple transient faults. 128-134
- Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic:
NBTI and irradiation related degradation mechanisms in power VDMOS transistors. 135-141 - Alberto Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda:
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. 142-146 - Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
Towards understanding recovery of hot-carrier induced degradation. 147-151 - D. Beckmeier, Andreas Martin:
Variation-resilient quantifiable plasma process induced damage monitoring. 152-158 - Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet:
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. 159-163 - Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong:
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. 164-168 - Shunqiang Xu, Hongyi Wang, Jianfei Wu, Liming Zheng, Jietao Diao:
A new multitime programmable non-volatile memory cell using high voltage NMOS. 169-172 - Guicui Fu, Yutai Su, Wendi Guo, Bo Wan, Zhongqing Zhang, Ye Wang:
Life prediction methodology of system-in-package based on physics of failure. 173-178 - Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee:
Effect of DC/AC stress on the reliability of cell capacitor in DRAM. 179-182 - Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. 183-185 - Yeohyeok Yun, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress. 186-190 - Yeohyeok Yun, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. 191-195 - Roberto B. Almeida, Cleiton Magano Marques, Paulo F. Butzen, Fábio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt:
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. 196-202
- Chunlei Wu:
Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects. 203-207 - Steffen Holland, Rolf Brenner:
Voltage oscillations during surge pulses induced by self-extinguishing non-destructive second breakdown in pn-junction diodes. 208-213 - Roger C. Goerl, Paulo Ricardo Cechelero Villa, Letícia Maria Veiras Bolzani, Eduardo Augusto Bezerra, Fabian Luis Vargas:
An efficient EDAC approach for handling multiple bit upsets in memory array. 214-218 - Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama:
Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests. 219-224 - Zhen Zhang, Yaoting Xue, Ruiqing Ma, Yongheng Yang:
An easy-implemented confidence filter for signal processing in the complex electromagnetic environment. 225-229 - Jianfei Wu, Wei Zhu, Binhong Li, Yafei Li, Hongyi Wang, Mengjun Wang:
Investigations on immunity of interfaces between intelligent media processor and DDR3 SDRAM memory. 230-235 - Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz:
Unified view on energy and electrical failure of the short-circuit operation of IGBTs. 236-241
- Yuji Yamagishi, Y. Cho:
High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy. 242-245 - Yi Chao Low, Pik Kee Tan, Soon Leng Tan, Yuzhe Zhao, Jeffrey Lam:
Solving 28 nm I/O circuit reliability issue due to IC design weakness. 246-249 - Oskar Amster, K. A. Rubin, Y. Yang, D. Iyer, Arron Messinger:
Application of Scanning Microwave Microscopy nano-C-V to investigate dopant defect under a poly gate device. 250-254 - Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang:
Understanding spatial resolution of laser voltage imaging. 255-261 - Eva Kozic, René Hammer, Jördis Rosc, Bernhard Sartory, Joerg Siegert, Franz Schrank, Roland Brunner:
Metallization defect detection in 3D integrated components using scanning acoustic microscopy and acoustic simulations. 262-266 - Emanuele Villa, Audrey Garnier, Antoine Reverdy:
Exploitation of Laser Voltage techniques for identification and complete characterization of a scan chain transition fail issue using the second harmonic approach. 267-272 - Anne Beyreuther, Norbert Herfurth, Elham Amini, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
Photon emission as a characterization tool for bipolar parasitics in FinFET technology. 273-276 - Tan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg:
Failure signature analysis of power-opens in DDR3 SDRAMs. 277-281 - Michael Hertl, Nicolas Vivet, Fabien Allanic, Sandra Dureau, Armelle Minguet, Nicolas Porcher, Isaline Richard, Pauline Serre:
Use of golden samples for the assessment of the quality and reproducibility of scanning acoustic microscopy images of electronics samples. 282-287 - Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard:
New defect detection approach using near electromagnetic field probing of high density PCBAs. 288-293 - Giulia Marcello, Eleonora Meda, Matteo Medda:
Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study. 294-298 - T. Schaffus, P. Albert, W. Breuer, D. Debie, M. Graml, C. Hollerith, F. Kroninger, W. Mack, H. Pfaff, M. Schaffus, J. Walter:
Influence of sample preparation on intrinsic stresses inside a model Chip - First results of partial decapsulation. 299-303 - Amir Sajjad Bahman, S. M. Jensen, Francesco Iannuzzo:
Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. 304-308 - Pik Kee Tan, Yuzhe Zhao, Francis Rivai, Binghai Liu, Yanlin Pan, Ran He, Hao Tan, Zhihong Mai:
Cross-sectional nanoprobing sample preparation on sub-micron device with fast laser grooving technique. 309-314 - Marc van Veenhuizen:
Void detection in solder bumps with deep learning. 315-320 - Shaalini Chithambaram, Pik Kee Tan, Yuzhe Zhao, Binghai Liu, Yinzhe Ma, Alfred Quah, Dayanand Nagalingam, Yanlin Pan, Zhihong Mai:
Failure analysis on 14 nm FinFET devices with ESD CDM failure. 321-333 - Ivo Vogt, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
Detection of failure mechanisms in 24-40 nm FinFETs with (spectral) photon emission techniques using InGaAs camera. 334-338 - Xuerong Ye, Cen Chen, Guofu Zhai:
Fault localization of a switched mode power supply based on extended integer-coded dictionary method. 339-344 - Hye-Young Kim, Jae-Yeon Kim, Ki-Tae Yoo, Won-Jon Yang, Jai-Won Byeon:
Failure mechanism of Ag nanowire-coated conductive transparent electrode for wearable devices under folding and torsional fatigue condition. 345-349 - Zhongliang Li, Zhixue Zheng, Rachid Outbib:
A prognostic methodology for power MOSFETs under thermal stress using echo state network and particle filter. 350-354 - G. Cardoso Medeiros, Letícia Maria Veiras Bolzani, Mottaqiallah Taouil, Fabian Vargas, Said Hamdioui:
A defect-oriented test approach using on-Chip current sensors for resistive defects in FinFET SRAMs. 355-359 - Katsuyoshi Miura, Atsuki Seko, Koji Nakamae:
Simulation-based evaluation of probing attacks to arbiter PUFs using a time-resolved emission microscope. 360-364 - Patrick Dreher, Roman Schmidt, A. Vetter, J. Hepp, Karl Aberer, Christoph J. Brabec:
Non-destructive imaging of defects in Ag-sinter die attach layers - A comparative study including X-ray, Scanning Acoustic Microscopy and Thermography. 365-370 - Bahar Ahmadi, Bahram Javidi, Sina Shahbazmohamadi:
Automated detection of counterfeit ICs using machine learning. 371-377
- Andrew Barnes, Florence Hélière, P. Villar, Hannes Stuhldreier, C. Beaurain, D. Bouw, M. Grunwald, E. Moess, Tobias Muck, C. Schildbach, T. Ayles, A. Kramer, B. Bildner:
Qualification of GaN microwave transistors for the European Space Agency Biomass mission. 378-384 - Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay:
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. 385-388 - Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann:
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. 389-392 - Wardhana A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson:
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. 393-396 - Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. 397-401 - Omar Chihani, L. Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard:
Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses. 402-405 - D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon:
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. 406-410 - Dongshin Kim, Ju-Hwan Choi, Nochang Park, Sung-Il Chan, Yongchae Jeong:
Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection. 411-417 - Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage:
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. 418-422
- Keting Hu, Zhigang Liu, Francesco Iannuzzo, Frede Blaabjerg:
Simple and effective open switch fault diagnosis of single-phase PWM rectifier. 423-427 - Julio Brandelero, Jeffrey Ewanchuk, Nicolas Degrenne, Stefan Mollov:
Lifetime extension through Tj equalisation by use of intelligent gate driver with multi-chip power module. 428-432 - Kazunori Hasegawa, Shinichi Nishizawa, Ichiro Omura:
ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier. 433-437 - Paolo Magnone, Giacomo Barletta, A. Magrì:
Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. 438-442 - Hiroaki Matsumori, Kazuki Urata, Toshihisa Shimizu, Koushi Takano, Hitoshi Ishii:
Capacitor loss analysis method for power electronics converters. 443-446 - S. Kremp, O. Schilling:
Humidity robustness for high voltage power modules: Limiting mechanisms and improvement of lifetime. 447-452 - Hao Niu, Shujuan Wang, Xuerong Ye, Huai Wang, Frede Blaabjerg:
Lifetime prediction of aluminum electrolytic capacitors in LED drivers considering parameter shifts. 453-457 - Akihiko Watanabe, Ichiro Omura:
A power cycling degradation inspector of power semiconductor devices. 458-461 - Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov:
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. 462-469 - Charalampos Papadopoulos, Chiara Corvasce, Arnost Kopta, Daniel Schneider, Gontran Pâques, Munaf Rahimo:
The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection. 470-475 - Mauro Ciappa, Ying Pang, Chenchen Sun:
Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources. 476-481 - Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura:
Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena. 482-485 - Mohamed Halick Mohamed Sathik, Prasanth Sundarajan, F. Sasongko, Josep Pou:
Online condition monitoring of IGBT modules using voltage change rate identification. 486-492 - Vahid Samavatian, Yvan Avenas, Hossein Iman-Eini:
Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter. 493-499 - Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura:
Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system. 500-504 - Ravi N. Tripathi, Masanori Tsukuda, Ichiro Omura:
A fully digital feedback control of gate driver for current balancing of parallel connected power devices. 505-509 - Th. Stiasny, Olivier Quittard, Daniel Waltisberg, U. Meier:
Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis. 510-513 - Yu Peng, Y. J. Zhang, Datong Liu, Liansheng Liu:
Degradation estimation using feature increment stepwise linear regression for PWM Inverter of Electro-Mechanical Actuator. 514-518 - Zhongxu Wang, Huai Wang, Yi Zhang, Frede Blaabjerg:
A multi-port thermal coupling model for multi-chip power modules suitable for circuit simulators. 519-523 - Haoran Wang, Huai Wang:
An analytical circuit based nonlinear thermal model for capacitor banks. 524-527 - Nga Man Li, Subramani Manoharan, Diganta Das, F. Patrick McCluskey:
Analysis of indentation measured mechanical properties on Multilayer Ceramic Capacitors (MLCCs). 528-533 - Felix Wuest, S. Trampert, S. Janzen, Stefan Straube, Martin Schneider-Ramelow:
Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated aging of power electronics. 534-539 - Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Measure of high frequency input impedance to study the instability of power devices in short circuit. 540-544 - Pooya Davari, O. Kristensen, Francesco Iannuzzo:
Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. 545-549
- Josef Lutz, Jörg Franke:
Reliability and reliability investigation of wide-bandgap power devices. 550-556 - Jose Angel Ortiz Gonzalez, Olayiwola Alatise:
Bias temperature instability and condition monitoring in SiC power MOSFETs. 557-562 - Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. 563-567 - Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of GaN-on-GaN vertical diodes submitted to high current stress. 568-571 - Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. 572-576 - Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. 577-583 - Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove,