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ORCIDMicroelectronics Reliability, Volumes 88-90
Volumes 88-90, September 2018
- Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo
:
Editorial. 1 - Wen-Chieh Chen, Ming-Dou Ker:
Surge protection design with surge-to-digital converter for microelectronic circuits and systems. 2-5 - Hassen Aziza, Basma Hajri, Mohammad M. Mansour, Ali Chehab, Annie Pérez:
A lightweight write-assist scheme for reduced RRAM variability and power. 6-10 - Ivo Vogt, Tomonori Nakamura, B. Motamedi, Christian Boit:
Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra. 11-15 - Marianne Unterreitmeier, Oliver Nagler, Lothar Pfitzner, Robert Weigel, Rainer Holmer:
An acoustic emission sensor system for thin layer crack detection. 16-21 - Elham Amini, Anne Beyreuther, Norbert Herfurth, Alexander Steigert, R. Muydinov, Bernd Szyszka, Christian Boit:
IC security and quality improvement by protection of chip backside against hardware attacks. 22-25 - Giovanna Mura:
Reliability concerns from the gray market. 26-30 - Michal Baszynski, P. Rydygier, Mariusz Wojcik:
Experimental studies of: Laminate composition, drill bit wear out, and chloride ion concentration as factors affecting CAF formation rate. 31-37 - Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira:
Performance-reliability trade-offs in short range RF power amplifier design. 38-42 - Nick Baker, Francesco Iannuzzo:
Smart SiC MOSFET accelerated lifetime testing. 43-47 - Bahar Ahmadi, Pouya Tavousi, Joseph Favata, Peiman Shahbeigi-Roodposhti, Rengarajan Pelapur, Sina Shahbazmohamadi:
A novel crowdsourcing platform for microelectronics counterfeit defect detection. 48-53 - Abdellatif Bey-Temsamani, S. Kauffmann, Stijn Helsen, T. Gaens, V. Driesen:
Physics-of-Failure (PoF) methodology for qualification and lifetime assessment of supercapacitors for industrial applications. 54-60 - Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement:
Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories. 61-66 - Morgane Mousnier, Kévin Sanchez, Elsa Locatelli, Thierry Lebey, Vincent Bley:
Lock-in thermography for defect localization and thermal characterization for space application. 67-74 - Mingyao Ma, Kaiqi Chu, Mingyue Zhan, Ye Wang, Fang Liu:
Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields. 75-79 - Pham Luu Trung Duong, Hyunseok Park, Nagarajan Raghavan:
Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes. 80-84 - Pham Luu Trung Duong, Xuechu Xu, Qing Yang, Nagarajan Raghavan:
Gaussian process regression approach for robust design and yield enhancement of self-assembled nanostructures. 85-90 - G. Prathiba, M. Santhi, A. Ahilan:
Design and implementation of reliable flash ADC for microwave applications. 91-97 - O. Dixon-Luinenburg, J. Fine:
In-situ transistor reliability measurements through nanoprobing. 98-102 - Xiaoman Sun, Meng Huang, Yi Liu, Xiaoming Zha:
Investigation of artificial neural network algorithm based IGBT online condition monitoring. 103-106 - Xuerong Ye, Yigang Lin, Qingmin Wang, Hao Niu, Guofu Zhai:
Manufacturing process-based storage degradation modelling and reliability assessment. 107-110 - Alexandra L. Zimpeck, Cristina Meinhardt, Laurent Artola, Guillaume Hubert, Fernanda Lima Kastensmidt, Ricardo Augusto da Luz Reis:
Impact of different transistor arrangements on gate variability. 111-115 - Leonardo B. Moraes, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
Evaluation of variability using Schmitt trigger on full adders layout. 116-121 - Thiago Ferreira de Paiva Leite, Laurent Fesquet, Rodrigo Possamai Bastos:
A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems. 122-127 - Raphael Andreoni Camponogara Viera, Jean-Max Dutertre, Marie-Lise Flottes, Olivier Potin, Giorgio Di Natale, Bruno Rouzeyre, Rodrigo Possamai Bastos:
Assessing body built-in current sensors for detection of multiple transient faults. 128-134
- Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic:
NBTI and irradiation related degradation mechanisms in power VDMOS transistors. 135-141 - Alberto Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda:
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. 142-146 - Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
Towards understanding recovery of hot-carrier induced degradation. 147-151 - D. Beckmeier, Andreas Martin:
Variation-resilient quantifiable plasma process induced damage monitoring. 152-158 - Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet:
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. 159-163 - Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong:
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. 164-168 - Shunqiang Xu, Hongyi Wang, Jianfei Wu, Liming Zheng, Jietao Diao:
A new multitime programmable non-volatile memory cell using high voltage NMOS. 169-172 - Guicui Fu, Yutai Su, Wendi Guo, Bo Wan, Zhongqing Zhang, Ye Wang:
Life prediction methodology of system-in-package based on physics of failure. 173-178 - Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee:
Effect of DC/AC stress on the reliability of cell capacitor in DRAM. 179-182 - Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. 183-185 - Yeohyeok Yun, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress. 186-190 - Yeohyeok Yun, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. 191-195 - Roberto B. Almeida, Cleiton Magano Marques, Paulo F. Butzen, Fábio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt:
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. 196-202
- Chunlei Wu:
Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects. 203-207 - Steffen Holland, Rolf Brenner:
Voltage oscillations during surge pulses induced by self-extinguishing non-destructive second breakdown in pn-junction diodes. 208-213 - Roger C. Goerl, Paulo Ricardo Cechelero Villa, Letícia Maria Veiras Bolzani, Eduardo Augusto Bezerra, Fabian Luis Vargas:
An efficient EDAC approach for handling multiple bit upsets in memory array. 214-218 - Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama:
Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests. 219-224 - Zhen Zhang, Yaoting Xue, Ruiqing Ma, Yongheng Yang:
An easy-implemented confidence filter for signal processing in the complex electromagnetic environment. 225-229 - Jianfei Wu, Wei Zhu, Binhong Li, Yafei Li, Hongyi Wang, Mengjun Wang:
Investigations on immunity of interfaces between intelligent media processor and DDR3 SDRAM memory. 230-235 - Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz:
Unified view on energy and electrical failure of the short-circuit operation of IGBTs. 236-241
- Yuji Yamagishi, Y. Cho:
High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy. 242-245 - Yi Chao Low, Pik Kee Tan, Soon Leng Tan, Yuzhe Zhao, Jeffrey Lam:
Solving 28 nm I/O circuit reliability issue due to IC design weakness. 246-249 - Oskar Amster, K. A. Rubin, Y. Yang, D. Iyer, Arron Messinger:
Application of Scanning Microwave Microscopy nano-C-V to investigate dopant defect under a poly gate device. 250-254 - Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang:
Understanding spatial resolution of laser voltage imaging. 255-261 - Eva Kozic, René Hammer, Jördis Rosc, Bernhard Sartory, Joerg Siegert, Franz Schrank, Roland Brunner:
Metallization defect detection in 3D integrated components using scanning acoustic microscopy and acoustic simulations. 262-266 - Emanuele Villa, Audrey Garnier, Antoine Reverdy:
Exploitation of Laser Voltage techniques for identification and complete characterization of a scan chain transition fail issue using the second harmonic approach. 267-272 - Anne Beyreuther, Norbert Herfurth, Elham Amini, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
Photon emission as a characterization tool for bipolar parasitics in FinFET technology. 273-276 - Tan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg:
Failure signature analysis of power-opens in DDR3 SDRAMs. 277-281 - Michael Hertl, Nicolas Vivet, Fabien Allanic, Sandra Dureau, Armelle Minguet, Nicolas Porcher, Isaline Richard, Pauline Serre:
Use of golden samples for the assessment of the quality and reproducibility of scanning acoustic microscopy images of electronics samples. 282-287 - Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard:
New defect detection approach using near electromagnetic field probing of high density PCBAs. 288-293 - Giulia Marcello, Eleonora Meda, Matteo Medda:
Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study. 294-298 - T. Schaffus, P. Albert, W. Breuer, D. Debie, M. Graml, C. Hollerith, F. Kroninger, W. Mack, H. Pfaff, M. Schaffus, J. Walter:
Influence of sample preparation on intrinsic stresses inside a model Chip - First results of partial decapsulation. 299-303 - Amir Sajjad Bahman, S. M. Jensen, Francesco Iannuzzo:
Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. 304-308 - Pik Kee Tan, Yuzhe Zhao, Francis Rivai, Binghai Liu, Yanlin Pan, Ran He, Hao Tan, Zhihong Mai:
Cross-sectional nanoprobing sample preparation on sub-micron device with fast laser grooving technique. 309-314 - Marc van Veenhuizen:
Void detection in solder bumps with deep learning. 315-320 - Shaalini Chithambaram, Pik Kee Tan, Yuzhe Zhao, Binghai Liu, Yinzhe Ma, Alfred Quah, Dayanand Nagalingam, Yanlin Pan, Zhihong Mai:
Failure analysis on 14 nm FinFET devices with ESD CDM failure. 321-333 - Ivo Vogt, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
Detection of failure mechanisms in 24-40 nm FinFETs with (spectral) photon emission techniques using InGaAs camera. 334-338 - Xuerong Ye, Cen Chen, Guofu Zhai:
Fault localization of a switched mode power supply based on extended integer-coded dictionary method. 339-344 - Hye-Young Kim, Jae-Yeon Kim, Ki-Tae Yoo, Won-Jon Yang, Jai-Won Byeon:
Failure mechanism of Ag nanowire-coated conductive transparent electrode for wearable devices under folding and torsional fatigue condition. 345-349 - Zhongliang Li, Zhixue Zheng, Rachid Outbib:
A prognostic methodology for power MOSFETs under thermal stress using echo state network and particle filter. 350-354 - G. Cardoso Medeiros, Letícia Maria Veiras Bolzani, Mottaqiallah Taouil, Fabian Vargas, Said Hamdioui:
A defect-oriented test approach using on-Chip current sensors for resistive defects in FinFET SRAMs. 355-359 - Katsuyoshi Miura, Atsuki Seko, Koji Nakamae:
Simulation-based evaluation of probing attacks to arbiter PUFs using a time-resolved emission microscope. 360-364 - Patrick Dreher, Roman Schmidt, A. Vetter, J. Hepp, Karl Aberer, Christoph J. Brabec:
Non-destructive imaging of defects in Ag-sinter die attach layers - A comparative study including X-ray, Scanning Acoustic Microscopy and Thermography. 365-370 - Bahar Ahmadi, Bahram Javidi, Sina Shahbazmohamadi:
Automated detection of counterfeit ICs using machine learning. 371-377
- Andrew Barnes, Florence Hélière, P. Villar, Hannes Stuhldreier, C. Beaurain, D. Bouw, M. Grunwald, E. Moess, Tobias Muck, C. Schildbach, T. Ayles, A. Kramer, B. Bildner:
Qualification of GaN microwave transistors for the European Space Agency Biomass mission. 378-384 - Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay:
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. 385-388 - Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann:
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. 389-392 - Wardhana A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson:
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. 393-396 - Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. 397-401 - Omar Chihani, L. Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard:
Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses. 402-405 - D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon:
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. 406-410 - Dongshin Kim, Ju-Hwan Choi, Nochang Park, Sung-Il Chan, Yongchae Jeong:
Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection. 411-417 - Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage:
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. 418-422
- Keting Hu, Zhigang Liu, Francesco Iannuzzo, Frede Blaabjerg:
Simple and effective open switch fault diagnosis of single-phase PWM rectifier. 423-427 - J. Brandelero, Jeffrey Ewanchuk, Nicolas Degrenne, Stefan Mollov:
Lifetime extension through Tj equalisation by use of intelligent gate driver with multi-chip power module. 428-432 - Kazunori Hasegawa, Shinichi Nishizawa, Ichiro Omura:
ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier. 433-437 - Paolo Magnone, Giacomo Barletta, A. Magrì:
Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. 438-442 - Hiroaki Matsumori, Kazuki Urata, Toshihisa Shimizu, Koushi Takano, Hitoshi Ishii:
Capacitor loss analysis method for power electronics converters. 443-446 - S. Kremp, O. Schilling:
Humidity robustness for high voltage power modules: Limiting mechanisms and improvement of lifetime. 447-452 - Hao Niu, Shujuan Wang, Xuerong Ye, Huai Wang, Frede Blaabjerg:
Lifetime prediction of aluminum electrolytic capacitors in LED drivers considering parameter shifts. 453-457 - Akihiko Watanabe, Ichiro Omura:
A power cycling degradation inspector of power semiconductor devices. 458-461 - Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov:
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. 462-469 - Charalampos Papadopoulos, Chiara Corvasce, Arnost Kopta, Daniel Schneider, Gontran Pâques, Munaf Rahimo:
The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection. 470-475 - Mauro Ciappa, Ying Pang, Chenchen Sun:
Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources. 476-481 - Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura:
Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena. 482-485 - Mohamed Halick Mohamed Sathik, Prasanth Sundarajan, F. Sasongko, Josep Pou:
Online condition monitoring of IGBT modules using voltage change rate identification. 486-492 - Vahid Samavatian, Yvan Avenas, Hossein Iman-Eini:
Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter. 493-499 - Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura:
Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system. 500-504 - Ravi N. Tripathi, Masanori Tsukuda, Ichiro Omura:
A fully digital feedback control of gate driver for current balancing of parallel connected power devices. 505-509 - Th. Stiasny, Olivier Quittard, Daniel Waltisberg, U. Meier:
Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis. 510-513 - Yu Peng, Y. J. Zhang, Datong Liu, Liansheng Liu:
Degradation estimation using feature increment stepwise linear regression for PWM Inverter of Electro-Mechanical Actuator. 514-518 - Zhongxu Wang, Huai Wang, Yi Zhang, Frede Blaabjerg:
A multi-port thermal coupling model for multi-chip power modules suitable for circuit simulators. 519-523 - Haoran Wang, Huai Wang:
An analytical circuit based nonlinear thermal model for capacitor banks. 524-527 - Nga Man Li, Subramani Manoharan, Diganta Das, F. Patrick McCluskey:
Analysis of indentation measured mechanical properties on Multilayer Ceramic Capacitors (MLCCs). 528-533 - Felix Wuest, S. Trampert, S. Janzen, Stefan Straube, Martin Schneider-Ramelow:
Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated aging of power electronics. 534-539 - Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Measure of high frequency input impedance to study the instability of power devices in short circuit. 540-544 - Pooya Davari, O. Kristensen, Francesco Iannuzzo:
Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. 545-549
- Josef Lutz, Jörg Franke:
Reliability and reliability investigation of wide-bandgap power devices. 550-556 - Jose Angel Ortiz Gonzalez, Olayiwola Alatise:
Bias temperature instability and condition monitoring in SiC power MOSFETs. 557-562 - Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. 563-567 - Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of GaN-on-GaN vertical diodes submitted to high current stress. 568-571 - Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. 572-576 - Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. 577-583 - Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. 584-588 - Tomoyuki Mannen, Keiji Wada:
Operating-waveform analysis based reliability evaluation of power MOSFETs used for a leg short-circuit initial charge method. 589-592 - Xi Jiang, Jun Wang, Jiwu Lu, Jianjun Chen, Xin Yang, Zongjian Li, Chunming Tu, Zheng John Shen:
Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions. 593-597 - F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane:
Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. 598-603 - Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson:
VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. 604-609 - Dario Pagnano, Giorgia Longobardi, Florin Udrea, Jinming Sun, Mohamed Imam, Reenu Garg, Hyeongnam Kim, Alain Charles:
On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs. 610-614 - Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino:
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. 615-619 - Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. 620-626 - Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo:
Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. 627-630 - Teng Zhang, Bruno Allard, Jinshun Bi:
The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. 631-635 - Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre:
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. 636-640 - Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard:
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. 641-644 - Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi:
Effect of short circuit aging on safe operating area of SiC MOSFET. 645-651 - Jian-Zhi Fu, François Fouquet, Moncef Kadi, Pascal Dherbécourt:
Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. 652-655 - Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel:
Measurement and analysis of SiC-MOSFET threshold voltage shift. 656-660 - H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. 661-665 - Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace:
Avalanche ruggedness of parallel SiC power MOSFETs. 666-670 - Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten:
Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices. 671-676 - Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. 677-683
- Jie Mei, R. Haug, O. Lanier, Tobias Grözinger, André Zimmermann:
Effect of Joule heating on the reliability of solder joints under power cycling conditions. 684-690 - T. Fujiwara, K. Yamamoto, Hidehiko Kimura:
Quantification of lead-free solder fatigue by EBSD analysis. 691-694 - Chanyang Choe, Seungjun Noh, Chuantong Chen, Dongjin Kim, Katsuaki Suganuma:
Influence of thermal exposure upon mechanical/electrical properties and microstructure of sintered micro-porous silver. 695-700 - Seungjun Noh, Hao Zhang, Jeyun Yeom, Chuantong Chen, Caifu Li, Katsuaki Suganuma:
Large-area die-attachment by silver stress migration bonding for power device applications. 701-706 - Yoann Pascal, Denis Labrousse, Mickael Petit, Stéphane Lefebvre, François Costa:
Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam. 707-714 - Elisabeth Kolbinger, Stefan Wagner, Astrid Gollhardt, Olaf Rämer, Klaus-Dieter Lang:
Corrosion behaviour of sintered silver under maritime environmental conditions. 715-720 - Thomas Walter, Golta Khatibi, Michael Nelhiebel, M. Stefenelli:
Characterization of cyclic delamination behavior of thin film multilayers. 721-725 - Christian Uhrenfeldt, Stig Munk-Nielsen, Szymon Beczkowski:
Frequency domain scanning acoustic microscopy for power electronics: Physics-based feature identification and selectivity. 726-732 - S. Zanella, A. Lecavelier des Etangs-Levallois, Eric Charkaluk, W. C. Maia Filho, A. Constantinescu:
Importance of electric resistance monitoring in shear test. 733-737 - Subramani Manoharan, Chandradip Patel, Stevan Hunter, F. Patrick McCluskey:
Mechanism of wire bond shear testing. 738-744 - Bernhard Czerny, Golta Khatibi:
Cyclic robustness of heavy wire bonds: Al, AlMg, Cu and CucorAl. 745-751 - Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, D. Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. 752-755 - Guang Zeng, F. Wenisch-Kober, Josef Lutz:
Study on power cycling test with different control strategies. 756-761 - Allen Jose George, Juergen Zipprich, Marlies Breitenbach, Markus Klingler, Mathias Nowottnick:
Reliability investigation of large area solder joints in power electronics modules and its simulative representation. 762-767 - Faical Arabi, Alexandrine Guédon-Gracia, Jean-Yves Delétage, Hélène Frémont:
Sequential combined thermal cycling and vibration test and simulation of printed circuit board. 768-773 - Mads Brincker, Peter Kjær Kristensen, S. Söhl, R. Eisele, Vladimir N. Popok:
Low temperature transient liquid phase bonded Cu-Sn-Mo and Cu-Sn-Ag-Mo interconnects - A novel approach for hybrid metal baseplates. 774-778 - Dongjin Kim, Chuantong Chen, Aiji Suetake, Chanyang Choe, Tohru Sugahara, Shijo Nagao, Katsuaki Suganuma:
Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure. 779-787 - Ui-Min Choi, Søren Jørgensen, Francesco Iannuzzo, Frede Blaabjerg:
Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings. 788-794 - Sanghun Jin, Min-Su Kim, Shutetsu Kanayama, Hiroshi Nishikawa:
Shear properties of In-Bi alloy joints with Cu substrates during thermal aging. 795-800 - Paolo Cova, Nicola Delmonte, Diego Chiozzi, Marco Portesine, F. Vaccaro, E. Mantegazza:
Water cold plates for high power converters: A software tool for easy optimized design. 801-805 - Yi Zhang, Huai Wang, Zhongxu Wang, Frede Blaabjerg:
An empirical model for thermal interface materials based on experimental characterizations under realistic conditions. 806-811 - Mattia Antonini, Paolo Cova, Nicola Delmonte, Alberto Castellazzi:
GaN transistors efficient cooling by graphene foam. 812-816 - Cheryl Selvanayagam, Rathin Mandal, Nagarajan Raghavan:
Comparison of experimental, analytical and simulation methods to estimate substrate material properties for warpage reliability analysis. 817-823
- Chun-Lin Lu, Pei-Rong Ni, Meng-Kao Yeh:
Stress analysis of CMOS-MEMS microphone under shock loading by Taguchi method. 824-828 - F. Saghaeian, J. Keckes, K. A. Schreiber, T. Mittereder:
Design and development of MEMS-based structures for in-situ characterization of thermo-mechanical behaviour of thin metal films. 829-834 - Daniel Monteiro Diniz Reis, Sven Rzepka, Karla Hiller:
Reliability testing of integrated low-temperature PVD PZT films. 835-839 - Dimitrios Birmpiliotis, Matroni Koutsoureli, J. Kohylas, George J. Papaioannou, A. Ziaei:
Charging mechanisms in Y2O3 dielectric films for MEMS capacitive switches. 840-845 - Ivan Marozau, Maxime Auchlin, Vaclav Pejchal, Frédéric Souchon, Dietmar Vogel, Markku Lahti, Nicolas Saillen, Olha Sereda:
Reliability assessment and failure mode analysis of MEMS accelerometers for space applications. 846-854 - Matteo Buffolo, M. Pietrobon, Carlo De Santi, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. 855-858 - Massimo Vanzi, Giovanna Mura, G. Martines:
Further improvements of an extended Hakki-Paoli method. 859-863 - Desiree Monti, Matteo Meneghini, Carlo De Santi, Agata Bojarska, Piotr Perlin, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. 864-867 - Nicola Trivellin, Desiree Monti, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Current induced degradation study on state of the art DUV LEDs. 868-872 - Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park:
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors. 873-877 - Marco Buonomo, Lorenzo Torto, Marco Barbato, Nicola Wrachien, Antonio Rizzo, Suren A. Gevorgyan, Frederik C. Krebs, Andrea Cester:
Analysis of the effects of voltage pulses on P3HT: PCBM polymeric solar cells by means of TLP technique. 878-881 - Marco Buonomo, Nicola Wrachien, Nicolò Lago, Giuseppe Cantarella, Andrea Cester:
Effects of stair case gate bias stress in IGZO/Al2O3 flexible TFTs. 882-886 - N. Renso, Matteo Buffolo, Carlo De Santi, M. Ronzani, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. 887-890
- Jinshun Bi, Yuan Duan, Kai Xi, Bo Li:
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory. 891-897 - Iuri Albandes Cunha Gomes, Alejandro Serrano-Cases, Mayler G. A. Martins, Antonio Martínez-Álvarez, Sergio Cuenca-Asensi, Fernanda Lima Kastensmidt:
Design of approximate-TMR using approximate library and heuristic approaches. 898-902 - Jose Isaza-Gonzalez, Felipe Restrepo-Calle, Antonio Martínez-Álvarez, Sergio Cuenca-Asensi:
SHARC: An efficient metric for selective protection of software against soft errors. 903-908 - Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg:
A single event upset tolerant latch design. 909-913 - M. Girard, Tristan Dubois, Patrick Hoffmann, Geneviève Duchamp:
Effects of HPEM stress on GaAs low-noise amplifier from circuit to component scale. 914-919 - Ygor Q. Aguiar, Frederic Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Antoine D. Touboul, Vincent Pouget:
Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. 920-924 - Manuel Peña-Fernandez, Almudena Lindoso, Luis Entrena, Mario García-Valderas, S. Philippe, Yolanda Morilla, Pedro Martín-Holgado:
PTM-based hybrid error-detection architecture for ARM microprocessors. 925-930 - Marcio Gonçalves, Mateus Saquetti, José Rodrigo Azambuja:
Evaluating the reliability of a GPU pipeline to SEU and the impacts of software-based and hardware-based fault tolerance techniques. 931-935 - Sarah Azimi, Luca Sterpone, Boyang Du, Luca Boragno:
On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs. 936-940 - Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. 941-945 - Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang:
Process variation dependence of total ionizing dose effects in bulk nFinFETs. 946-951 - Qingkui Yu, Yi Sun, Zheng Li, Bo Mei, Xiaoliang Li, He Lv, Pengwei Li, Min Tang:
Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. 952-956 - C. Kawahara, Y. Wada, S. Kinouchi, H. Kobayashi:
Non-destructive estimation method on cosmic ray ruggedness of power semiconductors using repetitive monitoring technique. 957-960 - Aleksandr S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov, A. M. Chlenov:
Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers. 961-964 - Nilson Maciel, Elaine Crespo Marques, Lirida A. B. Naviner, Hao Cai:
Single-event transient effects on dynamic comparator in 28 nm FDSOI CMOS technology. 965-968 - Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin:
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. 969-973 - Hoang T. Nguyen, Axel Rodriguez, Frederic Wrobel, Alain Michez, Francoise Bezerra, Nathalie Chatry, Benjamin Vandevelde:
TCAD simulation of radiation-induced leakage current in 1T1C SDRAM. 974-978 - Jian Wang, Binhong Li, Yang Huang, Kai Zhao, Fang Yu, Qiwen Zheng, Qi Guo, Liewei Xu, J. Gao, X. Cai, Y. Cui:
The total ionizing dose response of leading-edge FDSOI MOSFETs. 979-983 - Moustafa Zerarka, Olivier Crépel:
Radiation robustness of normally-off GaN/HEMT power transistors (COTS). 984-991 - Ying Pang, Mauro Ciappa:
Charge and energy deposition in thick silicon depletion layers by environmental ionizing radiation and terrestrial cosmic rays. 992-997
- Wonwook Oh, Soo Hyun Bae, Donghwan Kim, Nochang Park:
Initial detection of potential-induced degradation using dark I-V characteristics of crystalline silicon photovoltaic modules in the outdoors. 998-1002 - Ariya Sangwongwanich, Dao Zhou, Elizaveta Liivik, Frede Blaabjerg:
Mission profile resolution impacts on the thermal stress and reliability of power devices in PV inverters. 1003-1007 - Bjørn Rannestad, Peter Nielsen, Stig Munk-Nielsen, Kristian Gadgaard, Soren Jorgensen:
Converter monitoring in a wind turbine application. 1008-1013 - S. Ahsan, Kamran Ali Khan Niazi, Hassan Abbas Khan, Yongheng Yang:
Hotspots and performance evaluation of crystalline-silicon and thin-film photovoltaic modules. 1014-1018 - E. M. S. Brito, Allan Fagner Cupertino, Paula Diaz Reigosa, Yongheng Yang, Victor Flores Mendes, Heverton Augusto Pereira:
Impact of meteorological variations on the lifetime of grid-connected PV inverters. 1019-1024 - Fabio Ricco Galluzzo, A. Scuto, Cosimo Gerardi, A. Battaglia, Andrea Canino, Salvatore Lombardo:
Performance increase of tandem amorphous/microcrystalline Si PV devices under variable illumination and temperature conditions. 1025-1029 - Saeed Peyghami, Pooya Davari, Huai Wang, Frede Blaabjerg:
System-level reliability enhancement of DC/DC stage in a single-phase PV inverter. 1030-1035 - Ionut Vernica, Huai Wang, Frede Blaabjerg:
Uncertainty analysis of capacitor reliability prediction due to uneven thermal loading in photovoltaic applications. 1036-1041 - Muhammad Tariq, Saad A. Butt, Hassan Abbas Khan:
Impact of module and inverter failures on the performance of central-, string-, and micro-inverter PV systems. 1042-1046 - Jianhua Qin, Li Wang, Shanshui Yang, Rui Huang:
The effect of solar cell shunt resistance change on the bus voltage ripple in spacecraft power system. 1047-1050 - Ranjith Kumar Gatla, Wei Chen, Guorong Zhu, Dingjun Zeng, Ramchander Nirudi:
Lifetime estimation of modular cascaded H-bridge MLPVI for grid-connected PV systems considering mission profile. 1051-1056 - Guoliang Yang, Chuntian Fu, Haitao Yi, Chunhua Chai, Bingxu Huang, Shuai Hao, Zhe Chen:
Direct power control of three-level NPC grid-connected system combined with fault-tolerant technology. 1057-1062 - Renata Oliveira de Sousa, Joao Victor Matos Farias, Allan Fagner Cupertino, Heverton Augusto Pereira:
Life consumption of a MMC-STATCOM supporting wind power plants: Impact of the modulation strategies. 1063-1070 - R. C. de Barros, E. M. S. Brito, Giovani G. Rodrigues, Victor Flores Mendes, Allan Fagner Cupertino, Heverton Augusto Pereira:
Lifetime evaluation of a multifunctional PV single-phase inverter during harmonic current compensation. 1071-1076 - Paolo Cova, Nicola Delmonte, Massimo Lazzaroni:
Photovoltaic plant maintainability optimization and degradation detection: Modelling and characterization. 1077-1082
- Paul Pfäffli, Hiu Yung Wong, X. Xu, Luca Silvestri, X. W. Lin, T. Yang, Ravi Tiwari, Souvik Mahapatra, Steve Motzny, Victor Moroz, Terry Ma:
TCAD modeling for reliability. 1083-1089 - Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. 1090-1093 - Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. 1094-1097 - Yi Liu, Ping Liu, Huai Wang, Meng Huang, Xiaoming Zha:
Two-thermal-states model predictive control for IGBT in three-phase inverter. 1098-1102 - Tommaso Cilento, Chan-Su Yun, Arsen Terterian, Chang Hwi Lee, Jung Eon Moon, Si Woo Lee, Hyoungcheol Kwon, Manho Seung, Seokkiu Lee:
Investigation of layout effects in diode-triggered SCRs under very-fast TLP stress through full-size, calibrated 3D TCAD simulation. 1103-1107 - M. Balmont, Isabelle Bord-Majek, B. Poupard, Laurent Béchou, Yves Ousten:
Highlighting two integration technologies based on vias: Through silicon vias and embedded components into PCB. Strengths and weaknesses for manufacturing and reliability. 1108-1112 - S. A. Letz, A. Farooghian, F. B. Simon, Andreas Schletz:
Modeling the rate-dependent inelastic deformation behavior of porous polycrystalline silver films. 1113-1117 - Yanfeng Shen, Huai Wang, Frede Blaabjerg:
Thermal resistance modelling and design optimization of PCB vias. 1118-1123 - Michael David Hook, Stevan Hunter, Michael Mayer:
Deriving lifetime predictions for wire bonds at high temperatures. 1124-1129 - Jorgue Daniel Aguirre Morales, François Marc, A. Bensoussan, A. Durier:
Simulation and modelling of long term reliability of digital circuits implemented in FPGA. 1130-1134 - Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina:
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. 1135-1140 - Jun Yang, Xiao Shi, Jianchun Zhang:
A new processing method for accelerated degradation data based on quantile regression and pseudo-failure lifetime. 1141-1145 - Jingge Hu, Meng Huang, Yi Liu, Xiaoming Zha:
Transient junction temperature estimation of IGBT using improved thermal model. 1146-1150 - Zhipeng Ye, Jiawei Zhu, Qian Li, Bing Mo, Baimao Lei, Yaqiu Li, Chunhui Wang, Chuangmian Huang:
A novel method of reliability-centered process optimization for additive manufacturing. 1151-1156 - Hongpeng Liu, Wentao Wu, Hui Wu, Guihua Liu, Panbao Wang, Wei Wang:
Lifetime prediction of a modified Y-source inverter in photo-voltaic application. 1157-1163 - Tao Zheng, Meng Huang, Yi Liu, Xiaoming Zha:
Reliability model of bond wire fatigue for IGBT in MMC with system redundancy consideration. 1164-1167 - Daniela Cavallaro, Rosario Greco, Gaetano Bazzano:
Effect of solder material thickness on Power MOSFET reliability by Electro-thermo-Mechanical Simulations. 1168-1171 - S. Pin, Alexandrine Guédon-Gracia, Jean-Yves Delétage, Hélène Frémont:
Creep measurement and choice of creep laws for BGA assemblies' reliability simulation. 1172-1176 - S. Bahrebar, Dao Zhou, Sima Rastayesh, Huai Wang, Frede Blaabjerg:
Reliability assessment of power conditioner considering maintenance in a PEM fuel cell system. 1177-1182 - F. B. Simon, S. A. Letz, Andreas Schletz:
Influence of the pulse length and temperature swing on the relative lifetime estimation for sintered/soldered chip-on-substrate samples via FE-simulation of power cycles. 1183-1188
- Yongquan Sun, Xueling Hao, Michael G. Pecht, Yapeng Zhou:
Remaining useful life prediction for lithium-ion batteries based on an integrated health indicator. 1189-1194 - Ding Feng, Sheng Lin, Xiaojun Sun, Zhengyou He:
Reliability assessment for traction power supply system based on Quantification of Margins and Uncertainties. 1195-1200 - Ji Shu, Shunliang Wang, Tianqi Liu, Ning Jiao, Yanbo Wang:
A novel current-limiting circuit based on resistive-type SFCL for fault in DC power system. 1201-1205 - Jinsong Yu, Weiqi Tang, Diyin Tang, Jingjing Liu:
A prediction method for discharge voltage of lithium-ion batteries under unknown dynamic loads. 1206-1211 - Eduardo Redondo-Iglesias, Pascal Venet, Serge Pelissier:
Calendar and cycling ageing combination of batteries in electric vehicles. 1212-1215 - Jinhao Meng, Lei Cai, Guangzhao Luo, Daniel-Ioan Stroe, Remus Teodorescu:
Lithium-ion battery state of health estimation with short-term current pulse test and support vector machine. 1216-1220 - Mingyao Ma, Rui Wang, Fei Li, Jianing Wang, Shuying Yang:
A fault-tolerant control strategy for switched reluctance motor drive for electric vehicles under short-fault condition. 1221-1225 - Mingyao Ma, Zhiyu Sun, Ye Wang, Jianing Wang, Rui Wang:
Method of junction temperature estimation and over temperature protection used for electric vehicle's IGBT power modules. 1226-1230 - Yuan Ci Zhang, Olivier Briat, Jean-Yves Delétage, Cyril Martin, Nicolas Chadourne, Jean-Michel Vinassa:
Efficient state of health estimation of Li-ion battery under several ageing types for aeronautic applications. 1231-1235 - Sai Tang, Xin Yin, Daming Wang, Chao Zhang, Zhikang Shuai, Xin Yang, Zheng John Shen, Jun Wang:
Detection and identification of power switch failures for fault-tolerant operation of flying capacitor Buck-boost converters. 1236-1241 - Peng Fan, Shoudao Huang, Huai Wang, Derong Luo, Huimin Li, Meidi Sun:
Fundamental frequency region-based thermal control of power electronics modules in high power motor drive. 1242-1246 - Ping Liu, Huai Wang, Yi Liu, Frede Blaabjerg:
Thermal stress reduction of quasi-Z source inverter drive by model predictive control. 1247-1250 - Ana-Irina Stroe, Vaclav Knap, Daniel-Ioan Stroe:
Comparison of lithium-ion battery performance at beginning-of-life and end-of-life. 1251-1255 - Dan Zhang, Jianguo Jiang:
A reliable speed controller for suppressing low frequency concussion of electric vehicle. 1256-1260 - Tiezhou Wu, Zhihao Cheng, Jiasheng Zhang, Zhangqing He:
A PCH strong tracking control strategy for power coordinated allocation of Li-SC HESS. 1261-1267 - Zhao Liu, Shuai Wang, Zhendong Ji, Xiaopeng Ji, Yunyun Xie:
A novel fault-tolerant control for battery-energy-storage system based on cascaded multilevel converter with battery/BMS failure. 1268-1273 - Fei Mei, Liu Ning, Miao Huiyu, Pan Yi, Haoyuan Sha, Jianyong Zheng:
On-line fault diagnosis model for locomotive traction inverter based on wavelet transform and support vector machine. 1274-1280 - Shuai Lin, Xiaochun Fang, Fei Lin, Zhongping Yang, Xiaofan Wang:
Reliability of rail transit traction drive system-A review. 1281-1285 - Guoning Xu, Xiaowei Du, Zhaojie Li, Xiaojun Zhang, Minxin Zheng, Ying Miao, Yang Gao, Qianshi Liu:
Reliability design of battery management system for power battery. 1286-1292 - Hong Li, Zhongya Guo, Chen Liu, Trillion Q. Zheng:
An extensible stability analysis method in time domain for cascaded DC-DC converters in electrical vehicles. 1293-1299 - Jingda Gu, Xiaofeng Yang, Trillion Q. Zheng:
Influence factors analysis of rail potential in urban rail transit. 1300-1304 - Michel Piton, Bertrand Chauchat, Jean-François Serviere:
Implementation of direct Chip junction temperature measurement in high power IGBT module in operation - Railway traction converter. 1305-1310 - Ramin Parvari, Mostafa Zarghani, Shahriyar Kaboli:
RCD snubber design based on reliability consideration: A case study for thermal balancing in power electronic converters. 1311-1315 - B. Sivasankari, Ahilan Appathurai, R. Jothin, A. Jasmine Gnana Malar:
Reliable N sleep shuffled phase damping design for ground bouncing noise mitigation. 1316-1321
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