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ORCIDMicroelectronics Reliability, Volume 51
Volume 51, Number 1, January 2011
- Michael Mayer, Yi-Shao Lai:
Copper Wire Bonding. 1-2
- George G. Harman:
Preface. 3 - Z. W. Zhong:
Overview of wire bonding using copper wire or insulated wire. 4-12 - Bernd K. Appelt, Andy Tseng, Chun-Hsiung Chen, Yi-Shao Lai:
Fine pitch copper wire bonding in high volume production. 13-20 - Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Hao-Wen Hsueh
:
An investigation into the crystallization and electric flame-off characteristics of 20 μm copper wires. 21-24 - I-Ting Huang, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Hao-Wen Hsueh:
A study on the tensile fracture mechanism of 15 μm copper wire after EFO process. 25-29 - Jae-sik Lee, Michael Mayer, Y. Zhou, J. T. Moon, John Persic:
Influence of gold pick up on the hardness of copper free air ball. 30-37 - Jae-sik Lee, Michael Mayer, Y. Zhou, S. J. Hong, J. T. Moon:
Silver pick up during tail formation in thermosonic wire bonding process. 38-42 - A. Pequegnat, H. J. Kim, M. Mayer, Y. Zhou, John Persic, J. T. Moon:
Effect of gas type and flow rate on Cu free air ball formation in thermosonic wire bonding. 43-52 - Chao-Ton Su, Cheng-Jung Yeh:
Optimization of the Cu wire bonding process for IC assembly using Taguchi methods. 53-59 - I. Qin, Aashish Shah, C. Huynh, M. Meyer, M. Mayer, Y. Zhou:
Role of process parameters on bondability and pad damage indicators in copper ball bonding. 60-66 - Aashish Shah, Alireza Rezvani, M. Mayer, Y. Zhou, John Persic, J. T. Moon:
Reduction of ultrasonic pad stress and aluminum splash in copper ball bonding. 67-74 - Horst Clauberg, Petra Backus, Bob Chylak:
Nickel-palladium bond pads for copper wire bonding. 75-80 - Luke England, Siew Tze Eng, Chris Liew, Hock Heng Lim:
Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes. 81-87 - Tomohiro Uno:
Enhancing bondability with coated copper bonding wire. 88-96 - Rainer Dohle, Matthias Petzold, Robert Klengel, Holger Schulze, Frank Rudolf:
Room temperature wedge-wedge ultrasonic bonding using aluminum coated copper wire. 97-106 - Stefan Schmitz, Martin Schneider-Ramelow, S. Schröder:
Influence of bonding process parameters on chip cratering and phase formation of Cu ball bonds on AlSiCu during storage at 200 °C. 107-112 - H. Xu, C. Liu, Vadim V. Silberschmidt, Zhong Chen, J. Wei, M. Sivakumar:
Effect of bonding duration and substrate temperature in copper ball bonding on aluminium pads: A TEM study of interfacial evolution. 113-118 - Cheng-Fu Yu, Chi-Ming Chan, Li-Chun Chan, Ker-Chang Hsieh:
Cu wire bond microstructure analysis and failure mechanism. 119-124 - Jiunn Chen, Yi-Shao Lai, Yi-Wun Wang, C. Robert Kao:
Investigation of growth behavior of Al-Cu intermetallic compounds in Cu wire bonding. 125-129 - Masakatsu Maeda, Takaaki Sato, Naoto Inoue, Daisuke Yagi, Yasuo Takahashi:
Anomalous microstructure formed at the interface between copper ribbon and tin-deposited copper plate by ultrasonic bonding. 130-136 - Charles J. Vath III, M. Gunasekaran, Ramkumar Malliah:
Factors affecting the long-term stability of Cu/Al ball bonds subjected to standard and extended high temperature storage. 137-147 - Tomohiro Uno:
Bond reliability under humid environment for coated copper wire and bare copper wire. 148-156 - Yanhong Tian, Chunjin Hang, Chunqing Wang, G. Q. Ouyang, D. S. Yang, J. P. Zhao:
Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound. 157-165 - Catherine H. Chen, Shawn X. Zhang, S. W. Ricky Lee, Lebbai Mohamed:
Investigation on copper diffusion depth in copper wire bonding. 166-170 - Zhaohui Chen, Yong Liu, Sheng Liu:
Modeling of copper wire bonding process on high power LEDs. 171-178 - Hsiang-Chen Hsu, Wei-Yao Chang, Chang-Lin Yeh, Yi-Shao Lai:
Characteristic of copper wire and transient analysis on wirebonding process. 179-186
Volume 51, Number 2, February 2011
- Peter Ersland, Roberto Menozzi:
Editorial. 187 - William J. Roesch:
The ROCS Workshop and 25 years of compound semiconductor reliability. 188-194 - Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra:
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. 195-200 - Jungwoo Joh, Jesús A. del Alamo, Kurt Langworthy, Sujing Xie, Tsvetanka Zheleva:
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors. 201-206 - E. A. Douglas, C. Y. Chang, David J. Cheney, B. P. Gila, Chi-Fai Lo, Liu Lu, M. R. Holzworth, Patrick G. Whiting, Kevin S. Jones, Glen David Via, Jinhyung Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton:
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. 207-211 - Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. 212-216 - Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle:
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. 217-223 - M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher:
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. 224-228 - D. Mari, Mirko Bernardoni, Giovanna Sozzi, Roberto Menozzi, G. A. Umana-Membreno, Brett D. Nener:
A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion. 229-234 - Antonio Raffo, Sergio Di Falco, Giovanna Sozzi, Roberto Menozzi, Dominique M. M.-P. Schreurs, Giorgio Vannini:
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime. 235-239 - David Littleton, Dorothy June M. Hamada, William J. Roesch:
Drainage ratio impact on void creation in gold interconnect. 240-245 - Michael Meeder, Leslie Marchut, Michael J. Antonell, Michael T. Fresina, Christopher E. Novak, Terry C. Darche:
Application of Machine Model ESD tester to high volume capacitor reliability testing. 246-251
- Daniel Lau, Bernard Fong:
Special Issue on Prognostics and Health Management. 253-254 - Kenji Hirohata, Katsumi Hisano, Minoru Mukai:
Health-monitoring method of note PC for cooling performance degradation and load assessment. 255-262 - C.-H. Wu, C.-H. Yang, S.-C. Lo, Nikhil M. Vichare, E. Rhem, Michael G. Pecht:
Automatic data mining for telemetry database of computer systems. 263-269 - Ling Yu, Peng Xu:
Structural health monitoring based on continuous ACO method. 270-278 - Gang Niu, Satnam Singh, Steven W. Holland, Michael G. Pecht:
Health monitoring of electronic products based on Mahalanobis distance and Weibull decision metrics. 279-284 - Wenbin Wang, Matthew J. Carr, Wenjia Xu, Khairy Kobbacy:
A model for residual life prediction based on Brownian motion with an adaptive drift. 285-293 - Qiang Miao, Liu Liu, Yuan Feng, Michael G. Pecht:
Complex system maintainability verification with limited samples. 294-299 - Yifan Zhou, Lin Ma, Joseph Mathew, Yong Sun, Rodney Wolff:
Maintenance strategy optimization using a continuous-state partially observable semi-Markov decision process. 300-309 - Mohamed El-Koujok, Rafael Gouriveau, Noureddine Zerhouni:
Reducing arbitrary choices in model building for prognostics: An approach by applying parsimony principle on an evolving neuro-fuzzy system. 310-320
- F. Alagi:
A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs. 321-325 - C. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, Dimitri Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin:
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. 326-331 - Yan Han, Bo Song, Shurong Dong, Mingliang Li, Fei Ma, Meng Miao, Kehan Zhu:
Study of current saturation behaviors in dual direction SCR for ESD applications. 332-336 - Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang:
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. 337-341 - German A. Alvarez-Botero, Reydezel Torres-Torres, Roberto S. Murphy-Arteaga:
Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs. 342-349 - Bartomeu Alorda, Gabriel Torrens, Sebastià A. Bota, Jaume Segura:
8T vs. 6T SRAM cell radiation robustness: A comparative analysis. 350-359 - Ilbilge Dökme:
The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height. 360-364 - Miin-Horng Juang, Jim Yu, C. C. Hwang, D. C. Shye, J. L. Wang:
Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation. 365-369 - Engin Arslan, Serkan Bütün, Yasemin Safak, Habibe Uslu, Ilke Tasçioglu, Semsettin Altindal, Ekmel Özbay:
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures. 370-375 - Ying Wang, Hai-fan Hu, Chao Cheng:
Improved performance of trench power MOSFET with SiGeC-based channel. 376-380 - Chao-Wei Lin, Hsien-Chin Chiu, Che-Kai Lin, Jeffrey S. Fu:
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2SX + UV interface treatment. 381-385 - Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart:
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. 386-391 - Peter Sandborn, Varun J. Prabhakar, O. Ahmad:
Forecasting electronic part procurement lifetimes to enable the management of DMSMS obsolescence. 392-399 - Fong-Jung Yu, Yung-Yu Yang, Ming-Jaan Wang, Zhang Wu:
Using EWMA control schemes for monitoring wafer quality in negative binomial process. 400-405 - Pearl A. Agyakwa, Martin R. Corfield, Li Yang, J. F. Li, V. M. F. Marques, C. Mark Johnson:
Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling. 406-415 - Guojun Hu, Yong Goh Kim, Lim Judy:
Micromechanical analysis of copper trace in printed circuit boards. 416-424 - Juha-Veikko Voutilainen, Juha Häkkinen, Markku Moilanen:
Solder interconnection failure time estimation based on the embedded precursor behaviour modelling. 425-436 - Pyungho Shin, Sukjong Lee, Jaeyong Sung, Jong Hyeong Kim:
Operability diagram of drop formation and its response to temperature variation in a piezoelectric inkjet nozzle. 437-444 - Hsiu-Jen Lin, Tung-Han Chuang:
Interfacial microstructure and bonding strength of Sn-3Ag-0.5Cu and Sn-3Ag-0.5Cu-0.5Ce-xZn solder BGA packages with immersion Ag surface finish. 445-452 - Mariusz Felczak, Boguslaw Wiecek:
Application of genetic algorithms for electronic devices placement in structures with heat conduction through the substrate. 453-459 - Farshad Firouzi, Mostafa E. Salehi, Fan Wang, Sied Mehdi Fakhraie:
An accurate model for soft error rate estimation considering dynamic voltage and frequency scaling effects. 460-467 - Jie Han, Hao Chen, Erin Boykin, José A. B. Fortes:
Reliability evaluation of logic circuits using probabilistic gate models. 468-476 - Seyyed Javad Seyyed Mahdavi, Karim Mohammadi:
Improved single-pass approach for reliability analysis of digital combinational circuits. 477-484 - Karthikeyan Lingasubramanian, Syed M. Alam, Sanjukta Bhanja:
Maximum error modeling for fault-tolerant computation using maximum a posteriori (MAP) hypothesis. 485-501 - Anirban Sengupta, Reza Sedaghat, Zhipeng Zeng:
Rapid design space exploration by hybrid fuzzy search approach for optimal architecture determination of multi objective computing systems. 502-512 - Ying Wang, Chao Cheng, Hai-fan Hu:
Investigation of power Trench MOSFETs with retrograde body profile. 513-516
Volume 51, Number 3, March 2011
- King-Ning Tu:
Reliability challenges in 3D IC packaging technology. 517-523
- Robert O'Connor, Greg Hughes:
The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers. 524-528 - P. Holland, M. P. Elwin, I. Anteney, J. Ellis, L. Armstrong, G. Birchby, Petar Igic:
LDMOSFET with drain potential suppression for 100 V Power IC technology. 529-535 - V. V. N. Obreja, C. Codreanu, D. Poenar, Octavian Buiu:
Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic. 536-542 - Saeed Mohammadi, Ali Afzali-Kusha, Saeed Mohammadi:
Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs. 543-549 - Fayçal Djeffal, Toufik Bentrcia, Mohamed Amir Abdi, T. Bendib:
Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. 550-555 - N. A. Hastas, N. Arpatzanis, C. A. Dimitriadis, Julien Brochet, François Templier, G. Kamarinos:
Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors. 556-559 - Vladimir M. Milovanovic, Ramses van der Toorn, Ralf Pijper:
RF small signal avalanche for bipolar transistor circuit design: Characterization, modeling and repercussions. 560-565 - J. Vobecký, V. Komarnitskyy, V. Záhlava:
Molybdenum and low-temperature annealing of a silicon power P-i-N diode. 566-571 - Ping Cheng, Yuming Zhang, Yimen Zhang:
Characteristics of the intrinsic defects in unintentionally doped 4H-SiC after thermal annealing. 572-575 - Engin Arslan, Serkan Bütün, Yasemin Safak, Hüseyin Çakmak, Hongbo Yu, Ekmel Özbay:
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes. 576-580 - Z. Tekeli, Muharrem Gökçen, S. Altindal, Suleyman Özçelik, Ekmel Özbay:
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures. 581-586 - Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta:
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. 587-596 - V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, J. Albero:
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. 597-601 - Daniel Fernández, Jordi Madrenas, Jordi Cosp:
A self-test and dynamics characterization circuit for MEMS electrostatic actuators. 602-609 - W. L. Lu, Y. M. Hwang, C. T. Pan, S. C. Shen:
Analyses of electromagnetic vibration-based generators fabricated with LTCC multilayer and silver spring-inducer. 610-620 - Janusz M. Smulko, Kazimierz Józwiak, Marek Olesz, Lech Hasse:
Acoustic emission for detecting deterioration of capacitors under aging. 621-627 - Frederick Bossuyt, Jürgen Guenther, Thomas Löher, Manuel Seckel, Tom Sterken, J. de Vries:
Cyclic endurance reliability of stretchable electronic substrates. 628-635 - Jinglin Bi, Anmin Hu, Jing Hu, Tingbi Luo, Ming Li, Dali Mao:
Effect of Cr additions on interfacial reaction between the Sn-Zn-Bi solder and Cu/electroplated Ni substrates. 636-641 - M. Y. Tsai, C. W. Ting, C. Y. Huang, Yi-Shao Lai:
Determination of residual strains of the EMC in PBGA during manufacturing and IR solder reflow processes. 642-648 - Da Yu, Abdullah Al-Yafawi, Tung T. Nguyen, Seungbae Park, Soonwan Chung:
High-cycle fatigue life prediction for Pb-free BGA under random vibration loading. 649-656 - H. Tsukamoto, T. Nishimura, S. Suenaga, Stuart D. McDonald, Keith W. Sweatman, Kazuhiro Nogita:
The influence of solder composition on the impact strength of lead-free solder ball grid array joints. 657-667 - Thomas Schreier-Alt, Frank Rehme, Frank Ansorge, Herbert Reichl:
Simulation and experimental analysis of large area substrate overmolding with epoxy molding compounds. 668-675 - Yee-Wen Yen, Chun-Yu Lee:
ACF particle distribution in COG process. 676-684 - Soojae Park, Claudius Feger:
Thermal fracture toughness measurement for underfill during temperature change. 685-691 - Reza Sedaghat, M. Reza Javaheri, Prabhleen K. Kalkat, Jalal Mohammad Chikhe:
Switch-level emulation of strength-base soft error detection. 692-702 - Pedro Reviriego, Shanshan Liu, Juan Antonio Maestro:
Mitigation of permanent faults in adaptive equalizers. 703-710 - Igor Z. Milovanovic, Emina I. Milovanovic, Mile K. Stojcev, M. P. Bekakos:
Orthogonal fault-tolerant systolic arrays for matrix multiplication. 711-725
Volume 51, Number 4, April 2011
- Christopher Urban, James E. Moon, Ponnathpur R. Mukund:
Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS processes. 727-732 - El-Sayed A. M. Hasaneen, Mohamed A. A. Wahab, Mohamed Gamal Ahmed Mohamed:
Exact analytical model of single electron transistor for practical IC design. 733-745 - D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. 746-750 - A. Srivastava, R. K. Nahar, Chandan Kumar Sarkar, W. P. Singh, Y. Malhotra:
Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device. 751-755 - Shuqing Cao, Jung-Hoon Chun, Akram A. Salman, Stephen G. Beebe, Robert W. Dutton:
Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology. 756-764 - Pietro Maris Ferreira, Hervé Petit, Jean-François Naviner:
A synthesis methodology for AMS/RF circuit reliability: Application to a DCO design. 765-772 - Surendra S. Rathod, Ashok K. Saxena, Sudeb Dasgupta:
A low-noise, process-variation-tolerant double-gate FinFET based sense amplifier. 773-780 - Jen-Yu Jao, Chia-Feng Liu, Ming-Kun Chen, Ya-Chun Chuang, Ling-Sheng Jang:
Electrical characterization of single cell in microfluidic device. 781-789 - Arash Ahmadi, Mark Zwolinski:
Fixed-point multiplication: A probabilistic bit-pattern view. 790-796 - Pyungho Shin, Jaeyong Sung, Myeong Ho Lee:
Control of droplet formation for low viscosity fluid by double waveforms applied to a piezoelectric inkjet nozzle. 797-804 - Karol Malecha, Thomas Maeder, Caroline Jacq, Peter Ryser:
Structuration of the low temperature co-fired ceramics (LTCC) using novel sacrificial graphite paste with PVA-propylene glycol-glycerol-water vehicle. 805-811 - Yumi Kwon, Byung-seung Yim, Jongmin Kim, Jooheon Kim:
Dispersion, hybrid interconnection and heat dissipation properties of functionalized carbon nanotubes in epoxy composites for electrically conductive adhesives (ECAs). 812-818