Microelectronics Reliability, Volume 64

Volume 64, September 2016

• 
  Matthias Petzold:
  Editorial: ESREF 2016. 1

Quality and Reliability Assessment -General Techniques and Methods for Devices and Systems

• 
  Andreas Martin, Rolf-Peter Vollertsen, A. Mitchell, M. Traving, D. Beckmeier, H. Nielen:
  Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process. 2-12
• 
  Andreas Aal:
  Reliability management - The central enabler for advanced Technologies in Automotive. 13-18
• 
  Hao Cai, Kaikai Liu, Lirida Alves de Barros Naviner, You Wang, Mariem Slimani, Jean-François Naviner:
  Efficient reliability evaluation methodologies for combinational circuits. 19-25
• 
  You Wang, Hao Cai, Lirida A. B. Naviner, Xiaoxuan Zhao, Yue Zhang, Mariem Slimani, Jacques-Olivier Klein, Weisheng Zhao:
  A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI. 26-30
• 
  Mohammad Naouss, François Marc:
  FPGA LUT delay degradation due to HCI: Experiment and simulation results. 31-35
• 
  Pierre Canet, Jérémy Postel-Pellerin, Hassen Aziza:
  Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories. 36-41
• 
  Ning Ma, Shaojun Wang, Datong Liu, Yu Peng:
  A run-time built-in approach of TID test in SRAM based FPGAs. 42-47
• 
  Mariem Slimani, Paulo F. Butzen, Lirida A. B. Naviner, Y. Wang, Hao Cai:
  Reliability analysis of hybrid spin transfer torque magnetic tunnel junction/CMOS majority voters. 48-53
• 
  Nagarajan Raghavan:
  Application of the defect clustering model for forming, SET and RESET statistics in RRAM devices. 54-58
• 
  Hassen Aziza, Jean-Michel Portal:
  Resistive RAM variability monitoring using a ring oscillator based test chip. 59-62
• 
  Y. Q. de Aguiar, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
  Permanent and single event transient faults reliability evaluation EDA tool. 63-67
• 
  Tarek Saad Saoud, Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran:
  Natural radiation events in CCD imagers at ground level. 68-72
• 
  Roberta Pilia, Guillaume Bascoul, Kevin Sanchez, Giovanna Mura, Fulvio Infante:
  Single Event Transient acquisition and mapping for space device Characterization. 73-78
• 
  Peter Jacob:
  Early life field failures in modern automotive electronics - An overview; root causes and precautions. 79-83
• 
  Sang Myung Lee, Chuntaek Park, Ilgu Yun:
  Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors. 84-87
• 
  Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur:
  Impact of non-linear capacitances on transient waveforms during system level ESD stress. 88-92
• 
  Mohamed Ali Belaïd, H. Kaouach, Jaleleddine Ben Hadj Slama:
  Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests. 93-97
• 
  Kazunori Hasegawa, Kentaro Kozuma, Kousuke Tsuzaki, Ichiro Omura, Shinichi Nishizawa:
  Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections. 98-100
• 
  Benjamin Viale, Mathieu Fer, Lionel Courau, Philippe Galy, Bruno Allard:
  On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology. 101-108
• 
  Dongseok Shin, Min Soo Bae, Ilgu Yun:
  Instability of oxide thin film transistor under electrical-mechanical hybrid stress for foldable display. 109-112
• 
  Marcantonio Catelani, Lorenzo Ciani, Matteo Venzi:
  Component Reliability Importance assessment on complex systems using Credible Improvement Potential. 113-119
• 
  Yu Jiang, Junyong Tao, Yun-An Zhang, G. J. Yun:
  Fatigue life prediction model for accelerated testing of electronic components under non-Gaussian random vibration excitations. 120-124
• 
  Liansheng Liu, Dawei Pan, Datong Liu, Yujie Zhang, Yu Peng:
  DRES: Data recovery for condition monitoring to enhance system reliability. 125-129
• 
  Leonid Kessarinskiy, Georgii Davydov, Dmitry Boychenko, A. S. Artamonov, Alexander Nikiforov, I. B. Yashanin:
  The radiation test based assessment of process quality and reliability for conventional 65-nm CMOS technology. 130-133
• 
  Issam Baghdadi, Olivier Briat, Jean-Yves Delétage, Philippe Gyan, Jean-Michel Vinassa:
  Chemical rate phenomenon approach applied to lithium battery capacity fade estimation. 134-139
• 
  Michael Krüger, Stefan Straube, Andreas Middendorf, Daniel Hahn, T. Dobs, Klaus-Dieter Lang:
  Requirements for the application of ECUs in e-mobility originally qualified for gasoline cars. 140-144

Semiconductor Reliability & Failure Mechanisms

• 
  Andreas Kerber:
  Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies. 145-151
• 
  Walter E. Calienes Bartra, Andrei Vladimirescu, Ricardo Augusto da Luz Reis:
  FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects. 152-157
• 
  Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix:
  Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. 158-162
• 
  Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard:
  Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. 163-167
• 
  Binhong Li, Kai Zhao, Jianfei Wu, Xing Zhao, Jianwei Su, Jiantou Gao, Chuang Gao, Jun Luo:
  Electromagnetic susceptibility characterization of double SOI device. 168-171
• 
  Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey:
  Analysis of quantum conductance, read disturb and switching statistics in HfO₂ RRAM using conductive AFM. 172-178
• 
  Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger:
  Degradation and recovery of variability due to BTI. 179-184
• 
  Wei-Ting Kary Chien, Atman Yong Zhao, Yueqin Zhu, Yongliang Song:
  Early detection and prediction of HKMG SRAM HTOL performance by WLR PBTI tests. 185-188
• 
  Daniel Beckmeier, Andreas Martin:
  Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications. 189-193
• 
  Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
  Channel width dependence of AC stress on bulk nMOSFETs. 194-198
• 
  Chung Tah Chua, Hock Guan Ong, Kevin Sanchez, Philippe Perdu, Chee Lip Gan:
  Effects of voltage stress on the single event upset (SEU) response of 65 nm flip flop. 199-203
• 
  Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
  Conductive filament formation at grain boundary locations in polycrystalline HfO₂ -based MIM stacks: Computational and physical insight. 204-209
• 
  Jianfei Wu, Chuangwei Li, Binhong Li, Wei Zhu, Hongyi Wang:
  Microcontroller susceptibility variations to EFT burst during accelerated aging. 210-214
• 
  Jin Hyung Choi, Chong-Gun Yu, Jong Tae Park:
  Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory. 215-219
• 
  Wei-Ting Kary Chien, Yueqin Zhu, Yongliang Song, Atman Yong Zhao:
  Influence of I/O oxide process on the NBTI performance of 28 nm HfO₂-based HKMG p-MOSFETs. 220-224
• 
  Bin Liu, Junyong Tao, Xi Chen, Yun-An Zhang, Yu Jiang, Yi Qian:
  Numerical investigation of the effects of phosphorus on the mechanical responses of [1 1 0]-oriented silicon nano-wires. 225-229
• 
  Sarah Azimi, Boyang Du, Luca Sterpone:
  On the prediction of radiation-induced SETs in flash-based FPGAs. 230-234
• 
  Neha Gupta, Rishu Chaujar:
  Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability. 235-241

Reliability & Failure Mechanisms in Packages and Assembly

• 
  Alexandrine Guédon-Gracia, Hélène Frémont, Bernard Plano, Jean-Yves Delétage, Kirsten Weide-Zaage:
  Effects of salt spray test on lead-free solder alloy. 242-247
• 
  Michél Simon-Najasek, Georg Lorenz, Achim Lindner, Frank Altmann:
  Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions. 248-253
• 
  Amar Mavinkurve, Jaume L. M. Llacer Martinez, Michiel van Soestbergen, Jeroen J. M. Zaal:
  Moisture absorption by molding compounds under extreme conditions: Impact on accelerated reliability tests. 254-258
• 
  Verena Hein, Marco Erstling, Raj Sekar Sethu, Kirsten Weide-Zaage, Tianlin Bai:
  Reliability evaluation of tungsten donut-via as an element of the highly robust metallization. 259-265
• 
  Falk Naumann, Volkmar Gottschalk, Bernd Burchard, Frank Altmann:
  Reliability evaluation of Si-dies due to assembly issues. 266-269
• 
  Bernhard Czerny, Ali Mazloum-Nejadari, Golta Khatibi, Laurens Weiss, Michael Zehetbauer:
  Fatigue testing method for fine bond wires in an LQFP package. 270-275
• 
  Dietmar Vogel, Ellen Auerswald, Gh. Gadhiya, Sven Rzepka:
  Fast and trusted intrinsic stress measurement to facilitate improved reliability assessments. 276-280
• 
  Thomas Walter, Martin Lederer, Golta Khatibi:
  Delamination of polyimide/Cu films under mixed mode loading. 281-286
• 
  Toshitaka Ishizaki, Daiki Miura, Atsuki Kuno, Ryota Nagao, Syoho Aoki, Yuta Ohshima, Takuma Kino, Masanori Usui, Yasushi Yamada:
  Power cycle reliability of Cu nanoparticle joints with mismatched coefficients of thermal expansion. 287-293

Progress in Failure Analysis Methods

• 
  Ulrike Ganesh:
  Laser Voltage Probing (LVP) - Its value and the race against scaling. 294-298
• 
  Anthony Boscaro, Sabir Jacquir, Kevin Melendez, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
  Automatic process for time-frequency scan of VLSI. 299-305
• 
  Clemens Helfmeier, Erik Frieß, Joachim Glück:
  Static logic state analysis by TLS on powered logic circuits: Three case studies for suspected stuck-at failure modes. 306-309
• 
  Sören Hommel, Nicole Killat, Andreas Altes, Thomas Schweinböck, Doris Schmitt-Landsiedel, Marco Silvestri, Oliver Haeberlen:
  Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale. 310-312
• 
  Stephan Kleindiek, Klaus Schock, Andreas Rummel, Michael Zschornack, Pascal Limbecker, Andreas Meyer, Matthias Kemmler:
  Current imaging, EBIC/EBAC, and electrical probing combined for fast and reliable in situ electrical fault isolation. 313-316
• 
  Changqing Chen, P. T. Ng, Ghinboon Ang, H. Tan, Francis Rivai, Y. Z. Ma, Huipeng Ng, Jeffrey Lam, Zhihong Mai:
  Electrical analysis on implantation-related defect by nanoprobing methodology. 317-320
• 
  Pik Kee Tan, Huei Hao Yap, Changqing Chen, Francis Rivai, Yuzhe Zhao, Lei Zhu, Hua Feng, Hao Tan, Ran He, D. D. Wang, Y. M. Huang, Yin Zhe Ma, Jeffrey Lam, Zhi Hong Mai:
  Cross-sectional nanoprobing fault isolation technique on submicron devices. 321-325
• 
  J. Ma, Y. Fujimura, M. Utsumi, S. Tomonaga, Yoji Mashiko:
  Study on non-contact current path formation using charged particle beams. 326-329
• 
  Martin Herms, Matthias Wagner, Ingrid De Wolf:
  Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy. 330-335
• 
  Ahmad Khaled, Sebastian Brand, Michael Kögel, Tim Appenroth, Ingrid De Wolf:
  Investigating stress measurement capabilities of GHz Scanning Acoustic Microscopy for 3D failure analysis. 336-340
• 
  Sebastian Brand, Michél Simon-Najasek, Michael Kögel, Joerg Jatzkowski, R. Portius, Frank Altmann:
  Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy. 341-345
• 
  Michael Kögel, Frank Altmann, Sebastian Tismer, Sebastian Brand:
  Magnetic field and current density imaging using off-line lock-in analysis. 346-351
• 
  Caroline Andersson, Jonny Ingman, Elise Varescon, Mika Kiviniemi:
  Detection of cracks in multilayer ceramic capacitors by X-ray imaging. 352-356
• 
  Huei Hao Yap, Pik Kee Tan, Lei Zhu, H. Feng, Yuzhe Zhao, Ran He, Hao Tan, B. Liu, Y. M. Huang, D. D. Wang, Jeffrey Lam, Zhihong Mai:
  Application of laser deprocessing technique in PFA on chemical over-etched on bond-pad issue. 357-361
• 
  Yuzhe Zhao, Q. J. Wang, Pik Kee Tan, Huei Hao Yap, Binghai Liu, H. Feng, Hao Tan, Ran He, Y. M. Huang, D. D. Wang, Lei Zhu, C. Q. Chen, Francis Rivai, Jeffrey Lam, Zhihong Mai:
  Application of Fast Laser Deprocessing Techniques on large cross-sectional view area sample with FIB-SEM dual beam system. 362-366
• 
  James T. Sagar, Simon R. Burgess, Connor McCarthy, Xiaobing Li:
  Elemental characterisation of sub 20 nm structures in devices using new SEM-EDS technology. 367-369
• 
  Eva Grünwald, Jördis Rosc, René Hammer, Peter Czurratis, Matthias Koch, Jochen Kraft, Franz Schrank, Roland Brunner:
  Automatized failure analysis of tungsten coated TSVs via scanning acoustic microscopy. 370-374
• 
  Richart Stegink, Evan Liu, Manita Duangsang:
  Improved etching recipe for exposing Cu wire allowing reliable stitch pull. 375-378
• 
  Mohamed Sathik Mohamed Halick, Karthik Kandasamy, King-Jet Tseng, Prasanth Sundarajan:
  Online computation of IGBT on-state resistance for off-shelf three-phase two-level power converter systems. 379-386
• 
  Wan-Yi Liu, Chih-Feng Chiang, Chia-Hsiang Yen, Rung-Jiun Lin, Te-Fu Chang, Shih-Hsin Chang, Pau-Sheng Kuo, Chih-Hsun Chu:
  Fault isolation at P/N junction by nanoprober. 387-389
• 
  Jin Huang, Markus Löffler, Wolfhard Moeller, Ehrenfried Zschech:
  Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment. 390-392

Power Devices Reliability

• 
  Frank Hille, Roman Roth, Carsten Schäffer, Holger Schulze, Nicolas Heuck, Daniel Bolowski, Karsten Guth, Alexander Ciliox, Karina Rott, Frank Umbach, Martin Kerber:
  Reliability aspects of copper metallization and interconnect technology for power devices. 393-402
• 
  Ui-Min Choi, Frede Blaabjerg, Søren Jørgensen, Francesco Iannuzzo, Huai Wang, Christian Uhrenfeldt, Stig Munk-Nielsen:
  Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations. 403-408
• 
  Faical Arabi, Loic Théolier, Donatien Martineau, Jean-Yves Delétage, M. Medina, Eric Woirgard:
  Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices. 409-414
• 
  Safa Mbarek, François Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry:
  Gate oxide degradation of SiC MOSFET under short-circuit aging tests. 415-418
• 
  Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg:
  Mission-profile-based stress analysis of bond-wires in SiC power modules. 419-424
• 
  Kosuke Uchida, Toru Hiyoshi, Taro Nishiguchi, Hirofumi Yamamoto, Masaki Furumai, Takashi Tsuno, Yasuki Mikamura:
  Lifetime estimation of SiC MOSFETs under high temperature reverse bias test. 425-428
• 
  Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon:
  Power cycling analysis method for high-voltage SiC diodes. 429-433
• 
  Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby:
  Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. 434-439
• 
  Andrea Irace, Luca Maresca, Paolo Mirone, Michele Riccio, Giovanni Breglio, Laura Bellemo, Rossano Carta, Marco Naretto, Nabil El Baradai, Isabella Para, Natale Di Santo:
  200 V Fast Recovery Epitaxial Diode with superior ESD capability. 440-446
• 
  Ui Hyo Jeong, Jae Phil Hyung, Yang Gi Yoon, Min Ji Ko, Seok Geun Ha, Dong Hyuk Lee, Hong Woo Lim, Jang Joong Jang:
  Charging-discharging characteristics of a wound aluminum polymer capacitor. 447-452
• 
  Christian Herold, Peter Seidel, Josef Lutz, Reinhold Bayerer:
  Topologies for inverter like operation of power cycling tests. 453-457
• 
  Oliver Schilling, Klaus Leitner, Karl-Dietger Schulze, Frank Umbach:
  End of life and acceleration modelling for power diodes under high temperature reverse bias stress. 458-463
• 
  Weinan Chen, Jörg Franke, Christian Herold, Riteshkumar Bhojani, Josef Lutz:
  Internal processes in power semiconductors at virtual junction temperature measurement. 464-468
• 
  Tomohiro Tamaki, Yoshinori Yabuuchi, Masato Izumi, Norio Yasuhara, Kazutoshi Nakamura:
  Numerical study of destruction phenomena for punch-through IGBTs under unclamped inductive switching. 469-473
• 
  Xiaoping Dai, Yangang Wang, Yibo Wu, Haihui Luo, Guoyou Liu, Daohui Li, Steve Jones:
  Reliability design of direct liquid cooled power semiconductor module for hybrid and electric vehicles. 474-478
• 
  Masanori Tsukuda, Masahiro Koga, Kenta Nakashima, Ichiro Omura:
  Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules. 479-483
• 
  Yasushi Yamada, Masashi Yanase, Daiki Miura, Katsuhiro Chikuba:
  Novel heatsink for power semiconductor module using high thermal conductivity graphite. 484-488
• 
  Mads Brincker, Peter Kjær Kristensen, Kristian Bonderup Pedersen, Vladimir N. Popok:
  Mechanisms of metallization degradation in high power diodes. 489-493
• 
  Ilyas Dchar, Cyril Buttay, Hervé Morel:
  Avalanche robustness of SiC Schottky diode. 494-501
• 
  Erdenebaatar Dashdondog, Shohei Harada, Yuji Shiba, Ichiro Omura:
  Failure rate calculation method for high power devices in space applications at low earth orbit. 502-506
• 
  Paolo Cova, Nicola Delmonte, Adane Kassa Solomon, Alberto Castellazzi:
  Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability. 507-512
• 
  Richard Randoll, Wolfgang Wondrak, Andreas Schletz:
  Lifetime and manufacturability of integrated power electronics. 513-518
• 
  Lukas Tinschert, Magnar Hernes, Josef Lutz:
  Improving the short circuit ruggedness of IGBTs. 519-523
• 
  Paula Diaz Reigosa, Daniel Prindle, Gontran Pâques, Silvan Geissmann, Francesco Iannuzzo, Arnost Kopta, Munaf Rahimo:
  Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. 524-529

Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Power Devices Reliability

• 
  Asad Fayyaz, Gianpaolo Romano, Alberto Castellazzi:
  Body diode reliability investigation of SiC power MOSFETs. 530-534

Reliability & Failure Mechanisms of Wide Bandgap Devices

• 
  Agostino Benvegnù, Sylvain Laurent, Matteo Meneghini, Raymond Quéré, Jean-Luc Roux, Enrico Zanoni, Denis Barataud:
  Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs. 535-540
• 
  Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck:
  Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. 541-546
• 
  Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
  Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. 547-551
• 
  Wataru Saito, Toshiyuki Naka:
  UIS test of high-voltage GaN-HEMTs with p-type gate structure. 552-555
• 
  Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl:
  Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. 556-559
• 
  Matthieu Landel, Cyrille Gautier, Denis Labrousse, Stéphane Lefebvre:
  [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. 560-565
• 
  Norimich Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho:
  Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy. 566-569
• 
  Hyun Jun Jang, Chong-Gun Yu, Jong Tae Park:
  Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors. 570-574
• 
  Sang Min Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park:
  Device instability of amorphous InGaZnO thin film transistors with transparent source and drain. 575-579
• 
  Jong Hoon Lee, Seul Ki Yu, Jae Won Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park:
  Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain. 580-584
• 
  Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry:
  Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. 585-588
• 
  Govindo J. Syaranamual, Wardhana A. Sasangka, Riko I. Made, Subramaniam Arulkumaran, Geok Ing Ng, Siew Chuen Foo, Chee Lip Gan, Carl V. Thompson:
  Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation. 589-593
• 
  H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
  Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. 594-598

Reliability & Failure Mechanisms of Special Devices (Photonics, anorganic and organic LED)

• 
  B. Hamon, W. D. van Driel:
  LED degradation: From component to system. 599-604
• 
  Gordon Elger, Dominik Müller, Alexander Hanß, Maximilian Schmid, E. Liu, Udo Karbowski, Robert Derix:
  Transient thermal analysis for accelerated reliability testing of LEDs. 605-609
• 
  Matteo Buffolo, Matteo Meneghini, Carlo De Santi, Henry Felber, N. Renso, Gaudenzio Meneghesso, Enrico Zanoni:
  Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. 610-613
• 
  Marco La Grassa, Matteo Meneghini, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso:
  Degradation of InGaN-based LEDs related to charge diffusion and build-up. 614-616
• 
  Massimo Vanzi, Giovanna Mura, Giulia Marcello, Kunhui Xiao:
  ESD tests on 850 nm GaAs-based VCSELs. 617-622
• 
  Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
  Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. 623-626
• 
  Jorge Souto, José Luis Pura, Alfredo Torres, Juan Ignacio Jiménez López, Mauro A. Bettiati, François J. Laruelle:
  Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes. 627-630
• 
  Eduardo Nogueira, Vincenzo Orlando, Javier Ochoa, Antonio Fernandez, Manuel Vázquez:
  Accelerated Life Test of high luminosity blue LEDs. 631-634
• 
  Miao Cai, Dao-Guo Yang, Jianna Zheng, Jianlin Huang, Dongjing Liu, Jing Xiao, Ping Zhang, Guoqi Zhang, Xianping Chen:
  Effects of stress-loading test methods on the degradation of light-emitting diode modules. 635-639
• 
  Jae-Seong Jeong, Yong-Hyun Kim, Chang-kyun Park, Heon-Do Kim, Joongho Choi:
  Effect of H/Ar treatment on ZnO: B transparent conducting oxide for flexible a-Si: H/μc-Si: H photovoltaic modules under damp heat stress. 640-645
• 
  Wonwook Oh, Junhee Kim, Byungjun Kang, Soo Hyun Bae, Kyung Dong Lee, Hae-Seok Lee, Donghwan Kim, Sung-Il Chan:
  Evaluation of potential-induced degradation in crystalline Si solar cells using Na fault injection. 646-649

Reliability & Failure Mechanisms of MEMS and sensors

• 
  Gert Vogel:
  Creeping corrosion of copper on printed circuit board assemblies. 650-655
• 
  Stefan Oberhoff, Kay Goetz, Karin Trojan, Martin Zoeller, Joachim Glueck:
  Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors. 656-659
• 
  Matroni Koutsoureli, Athanasios Zevgolatis, Samuel Saada, Christine Mer-Calfati, Loukas Michalas, George J. Papaioannou, Philippe Bergonzo:
  Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness. 660-664
• 
  Jürgen Auersperg, Christian Collet, Thierry Dean, Dietmar Vogel, Thomas Winkler:
  Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor. 665-668
• 
  Yaqiu Li, Yufeng Sun, Weiwei Hu, Zili Wang:
  A novel correlative model of failure mechanisms for evaluating MEMS devices reliability. 669-675
• 
  Vesa Vuorinen, Antti Rautiainen, Hannele Heikkinen, Mervi Paulasto-Kröckel:
  Optimization of contact metallizations for reliable wafer level AuSn bonds. 676-680
• 
  Liansheng Liu, Yu Peng, Datong Liu:
  FESeR: A data-driven framework to enhance sensor reliability for the system condition monitoring. 681-687
• 
  Matroni Koutsoureli, Dimitrios Birmpiliotis, Loukas Michalas, George J. Papaioannou:
  An in depth analysis of pull-up capacitance-voltage characteristic for dielectric charging assessment of MEMS capacitive switches. 688-692

EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability"

• 
  Peter Jacob:
  Failure mechanisms and precautions in plug connectors and relays. 693-698
• 
  Gerhard Haubner, Walter Hartner, Sebastian Pahlke, Martin Richard Niessner:
  77 GHz automotive RADAR in eWLB package: From consumer to automotive packaging. 699-704
• 
  Marcel Held, R. Brönnimann:
  Safe cell, safe battery? Battery fire investigation using FMEA, FTA and practical experiments. 705-710