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ORCIDMicroelectronics Reliability, Volume 46
Volume 46, Number 1, January 2006
- Vincent Huard, M. Denais, C. R. Parthasarathy:
NBTI degradation: From physical mechanisms to modelling. 1-23
- Yeong-Chang Chou, Denise Leung, Ronald Grundbacher, Richard Lai, Quin Kan, P. H. Liu, David Eng, Thomas R. Block, Aaron K. Oki:
Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. 24-40 - J. D. Wu, P. J. Zheng, C. W. Lee, S. C. Hung, J. J. Lee:
A study in flip-chip UBM/bump reliability with effects of SnPb solder composition. 41-52 - Michael G. Pecht
, Yuliang Deng:
Electronic device encapsulation using red phosphorus flame retardants. 53-62 - Marty Agostinelli, Shing Lau, Sangwoo Pae, Phil Marzolf, Harish Muthali, Steve Jacobs:
PMOS NBTI-induced circuit mismatch in advanced technologies. 63-68
- S. Chatterjee, Yue Kuo, J. Lu, J.-Y. Tewg, P. Majhi:
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. 69-76 - Bradford L. Hunter, Brian K. Butka:
Damped transient power clamps for improved ESD protection of CMOS. 77-85 - Hamid R. Zarandi, Seyed Ghassem Miremadi:
A fault-tolerant cache architecture based on binary set partitioning. 86-99 - Hyong Tae Kim, Chang Seop Song, Hae Jeong Yang:
Algorithm for automatic alignment in 2D space by object transformation. 100-108 - Jaroslaw Legierski, Boguslaw Wiecek, Gilbert De Mey:
Measurements and simulations of transient characteristics of heat pipes. 109-115 - Zoran Radivojevic, Ivan Kassamakov, Markku Oinonen, H. Saarikko, Henri Seppänen, Pasi Vihinen:
Transient IR imaging of light and flexible microelectronic devices. 116-123 - Amir Rajabzadeh, Seyed Ghassem Miremadi:
Transient detection in COTS processors using software approach. 124-133 - Marion K. Matters-Kammerer, U. Mackens, Klaus Reimann, Rainer Pietig, D. Hennings, B. Schreinemacher, R. Mauczok, S. Gruhlke, C. Martiny:
Material properties and RF applications of high k and ferrite LTCC ceramics. 134-143 - Tanja Braun, Karl-Friedrich Becker, Mathias Koch, Volker Bader, Rolf Aschenbrenner, Herbert Reichl:
High-temperature reliability of Flip Chip assemblies. 144-154 - K. M. Chen, D. S. Jiang, N. H. Kao, J. Y. Lai:
Effects of underfill materials on the reliability of low-K flip-chip packaging. 155-163
- Yao Zhao, Mingzhen Xu, Changhua Tan:
Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes. 164-168 - Alina Caddemi, Giovanni Crupi, Nicola Donato:
Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs. 169-173 - Bjorn Vermeersch, Gilbert De Mey:
Thermal impedance plots of micro-scaled devices. 174-177 - J. F. Luo, Yuan Ji, T. X. Zhong, Y. Q. Zhang, J. Z. Wang, J. P. Liu, N. H. Niu, J. Han, X. Guo, G. D. Shen:
EBSD measurements of elastic strain fields in a GaN/sapphire structure. 178-182 - Jung-Hyuk Koh, Tae-geun Kim:
Reliability of Pb(Mg, Nb)O3-Pb(Zr, Ti)O3 multilayer ceramic piezoelectric actuators by Weibull method. 183-188 - Andrzej Szymanski, Ewa Kurjata-Pfitzner:
Effects of package and process variation on 2.4GHz analog integrated circuits. 189-193
- Mile K. Stojcev:
Stephen Brown Zvonko Vranesic, Fundamental of Digital Logic with Verilog Design, McGraw Hill, Boston, 2004, Hardcover, pp 844, plus XX, ISBN 0-07-121359-7. 194-195 - Mile K. Stojcev:
John P. Hayes, Computer Architecture and Organization, Third ed., McGraw-Hill Book Company, Inc., Boston, 1988, Softcover, pp 604, plus XIV, ISBN 0-07-115997-5. 196-197 - Mile K. Stojcev:
S. Sutherland, S. Davidman and P. Flake, System Verilog for Design: A Guide to Using System Verilog for Hardware Design and Modeling Hardcover, Kluwer Academic Publishers, Norwell, MA (2004) ISBN 1-4020-7530-8 pp 374, plus XXVIII, euro 119. 198-199
Volume 46, Numbers 2-4, February-April 2006
- Sasan Naseh, M. Jamal Deen, Chih-Hung Chen:
Hot-carrier reliability of submicron NMOSFETs and integrated NMOS low noise amplifiers. 201-212 - Chao-Kun Hu, L. Gignac, R. Rosenberg:
Electromigration of Cu/low dielectric constant interconnects. 213-231 - Fen Chen, J. Gill, Dave Harmon, T. Sullivan, A. Strong, B. Li, H. Rathore, Daniel C. Edelstein:
Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures. 232-243 - S. Manian Ramkumar, Reza Ghaffarian, Arun Varanasi:
Lead-free 0201 manufacturing, assembly and reliability test results. 244-262 - Mitsuo Fukuda:
Optical source reliability in recent optical fiber transmission systems and consumer electronics. 263-269 - James H. Stathis, Sufi Zafar:
The negative bias temperature instability in MOS devices: A review. 270-286
- M. Ossaimee, Khaled Kirah, W. Fikry, A. Girgis, O. A. Omar:
Simplified quantitative stress-induced leakage current (SILC) model for MOS devices. 287-292 - Alexander Zemliak, Roque De La Cruz:
Numerical analysis of a double avalanche region IMPATT diode on the basis of nonlinear model. 293-300 - Kun-Hsien Lin, Ming-Dou Ker:
Electrostatic discharge protection scheme without leakage current path for CMOS IC operating in power-down-mode condition on a system board. 301-310 - Argyrios T. Hatzopoulos, Dimitrios H. Tassis, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos:
Effects of hot carriers in offset gated polysilicon thin-film transistors. 311-316 - A. M. Albadri, Ronald D. Schrimpf, Kenneth F. Galloway, D. Greg Walker:
Single event burnout in power diodes: Mechanisms and models. 317-325 - Mohammadreza Keimasi, Sanka Ganesan, Michael G. Pecht:
Low temperature electrical measurements of silicon bipolar monolithic microwave integrated circuit (MMIC) amplifiers. 326-334 - K. M. Chen, B. C. Wu, K. H. Tang, F. Y. Cheng, N. H. Kao, J. Y. Lai:
An investigation into the effects of probing and wire bonding stress on the reliability of BOAC. 335-342 - C. Pramanik, Tarikul Islam, Hiranmay Saha:
Temperature compensation of piezoresistive micro-machined porous silicon pressure sensor by ANN. 343-351 - Andrzej Dziedzic, Andrzej Kolek, Waleed Ehrhardt, Heiko Thust:
Advanced electrical and stability characterization of untrimmed and variously trimmed thick-film and LTCC resistors. 352-359 - Sanka Ganesan, Michael G. Pecht, Sharon Ling:
Use of high temperature operating life data to mitigate risks in long-duration space applications that deploy commercial-grade plastic encapsulated semiconductor devices. 360-366 - Mohd Khairuddin Md Arshad, Ibrahim Ahmad, Azman Jalar, Ghazali Omar:
The surface characteristics of under bump metallurgy (UBM) in electroless nickel immersion gold (ENIG) deposition. 367-379 - Jamil A. Wakil:
Thermal performance impacts of heat spreading lids on flip chip packages: With and without heat sinks. 380-385 - Yi-Ming Jen, Ying-Lung Wu, Chih-Kai Fang:
Impact of the number of chips on the reliability of the solder balls for wire-bonded stacked-chip ball grid array packages. 386-399 - Daniel N. Donahoe, Michael G. Pecht, Isabel K. Lloyd, Sanka Ganesan:
Moisture induced degradation of multilayer ceramic capacitors. 400-408 - Y. L. Zhang, D. X. Q. Shi, Wei Zhou:
Reliability study of underfill/chip interface under accelerated temperature cycling (ATC) loading. 409-420 - Amy S. Fleischer, Ute Troppenz, Michael Hamacher, Werner John:
Thermal analysis of bond layer influence on performance of an all-active vertically coupled, microring resonating laser. 421-431 - Periannan Arulvanan, Zhaowei Zhong, Xunqing Shi:
Effects of process conditions on reliability, microstructure evolution and failure modes of SnAgCu solder joints. 432-439 - Kuo-Ming Chen, Kuo-Hsiung Houng, Kuo-Ning Chiang:
Thermal resistance analysis and validation of flip chip PBGA packages. 440-448 - Cheng-Li Chuang, Jong-Ning Aoh, Rong-Fong Din:
Oxidation of copper pads and its influence on the quality of Au/Cu bonds during thermosonic wire bonding process. 449-458 - YoungBae Kim, Hiroshi Noguchi, Masazumi Amagai:
Vibration fatigue reliability of BGA-IC package with Pb-free solder and Pb-Sn solder. 459-466 - Sarangapani Murali, Narasimalu Srikanth, Charles J. Vath III:
Effect of wire diameter on the thermosonic bond reliability. 467-475 - M. Y. Tsai, W. C. Chiang, T. M. Liu, G. H. Hsu:
Thermal deformation measurements and predictions of MAP-BGA electronic packages. 476-486 - Changsoo Jang, Seongyoung Han, Hangyu Kim, Sayoon Kang:
A numerical failure analysis on lead breakage issues of ultra fine pitch flip chip-on-flex and tape carrier packages during chip/film assembly process. 487-495 - Michael C. Larson, Melody A. Verges, Xia Liu:
Residual compression in area array packages induced by underfill shrinkage. 496-502 - Jongwoo Park, John Osenbach:
Processability and reliability of epoxy adhesive used in microelectronic devices linked to effects of degree of cure and damp heat aging. 503-511 - Se Young Yang, Young-Doo Jeon, Soon-Bok Lee, Kyung-Wook Paik:
Solder reflow process induced residual warpage measurement and its influence on reliability of flip-chip electronic packages. 512-522 - Chih-Tang Peng, Chia-Tai Kuo, Kuo-Ning Chiang, Terry Ku, Kenny Chang:
Experimental characterization and mechanical behavior analysis of intermetallic compounds of Sn-3.5Ag lead-free solder bump with Ti/Cu/Ni UBM on copper chip. 523-534 - Jong-Woong Kim, Dae-Gon Kim, Seung-Boo Jung:
Evaluation of displacement rate effect in shear test of Sn-3Ag-0.5Cu solder bump for flip chip application. 535-542 - C. D. Breach, F. Wulff, C. W. Tok:
An unusual mechanical failure mode in gold ballbonds at 50mum pitch due to degradation at the Au-Au4Al interface during ageing in air at 175degreeC. 543-557 - Yuqi Wang, K. H. Low, John H. L. Pang, Kay Hiang Hoon, F. X. Che, Y. S. Yong:
Modeling and simulation for a drop-impact analysis of multi-layered printed circuit boards. 558-573 - Yan Qi, Rex Lam, Hamid R. Ghorbani, Polina Snugovsky, Jan K. Spelt:
Temperature profile effects in accelerated thermal cycling of SnPb and Pb-free solder joints. 574-588 - Woon-Seong Kwon, Suk-Jin Ham, Kyung-Wook Paik:
Deformation mechanism and its effect on electrical conductivity of ACF flip chip package under thermal cycling condition: An experimental study. 589-599 - Fei Su, Kerm Sin Chian, Sung Yi:
An optical characterization technique for hygroscopic expansion of polymers and plastic packages. 600-609 - Lei Han, Fuliang Wang, Wenhu Xu, Jue Zhong:
Bondability window and power input for wire bonding. 610-615 - W. Dauksher, P. Marcoux, G. Castleman:
A methodology for the calculation of stress migration in die-level interconnects. 616-625 - Chang-Lin Yeh, Yi-Shao Lai:
Support excitation scheme for transient analysis of JEDEC board-level drop test. 626-636
- Li Chen, O. J. Guy, D. Doneddu, S. G. J. Batcup, S. P. Wilks, P. A. Mawby, T. Bouchet, F. Torregrosa:
Report on 4H-SiC JTE Schottky diodes. 637-640 - V. S. Pershenkov, A. D. Tremasov, V. V. Belyakov, A. U. Razvalyaev, V. S. Mochkin:
X-ray ion mobility spectrometer. 641-644 - Yi-Shao Lai, Ping-Feng Yang, Chang-Lin Yeh:
Experimental studies of board-level reliability of chip-scale packages subjected to JEDEC drop test condition. 645-650
- Mile K. Stojcev:
Sachin Sapatnekar, Timing, Kluwer Academic Publishers, Hardcover, ISBN 1-4020-7671-1, pp 294, plus IX. 651-652 - Mile K. Stojcev:
Low Power Electronics Design, Christian Pignet, Editor, CRC Press, Boca Raton, 2005, Hardcover, pp 854, plus 18, ISBN 0-8493-1941-2. 653-654
Volume 46, Numbers 5-6, May-June 2006
- Natarajan Mahadeva Iyer:
Introduction to special section on selected papers from EOS/ESD Symposium 2004. 655 - Charvaka Duvvury, Robert Steinhoff, Gianluca Boselli, Vijay Reddy, Hans Kunz, Steve Marum, Roger Cline:
Gate oxide failures due to anomalous stress from HBM ESD testers. 656-665 - M. Etherton, Ning Qu, J. Willemen, Wolfgang Wilkening, S. Mettler, Mariano Dissegna, R. Stella, L. Zullino, A. Andreini, Horst A. Gieser:
Study of CDM specific effects for a smart power input protection structure. 666-676 - Bart Keppens, Markus P. J. Mergens, Cong Son Trinh, Christian C. Russ, Benjamin Van Camp, Koen G. Verhaege:
ESD protection solutions for high voltage technologies. 677-688 - Krzysztof Domanski, B. Póltorak, S. Bargstädt-Franke, Wolfgang Stadler, Waclaw Bala:
Physical fundamentals of external transient latch-up and corrective actions. 689-701 - Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. 702-712
- Ranbir Singh:
Reliability and performance limitations in SiC power devices. 713-730
- Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci:
Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria. 731-742 - Maciej Wolborski, Mietek Bakowski, Armando Ortiz, Viljami Pore, Adolf Schöner, Mikko Ritala, Markku Leskelä, Anders Hallén:
Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H-SiC devices. 743-755 - Takayoshi Katahira, Ilkka Kartio, Hiroshi Segawa, Michimasa Takahashi, Katsumi Sagisaka:
Vertically high-density interconnection for mobile application. 756-762 - M. Y. Pan, Manoj Gupta, A. A. O. Tay, K. Vaidyanathan:
Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging. 763-767 - Oliver Aubel, Eberhard Bugiel, Dietmar Krüger, Wolfgang Hasse, Martina Hommel:
Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems. 768-773 - Xu Chen, Jun Zhang, Chunlei Jiao, Yanmin Liu:
Effects of different bonding parameters on the electrical performance and peeling strengths of ACF interconnection. 774-785 - Yannick Guhel, Bertrand Boudart, E. Delos, Marianne Germain, Z. Bougrioua:
Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N. 786-793 - Amy S. Fleischer, Li-Hsin Chang, Barry C. Johnson:
The effect of die attach voiding on the thermal resistance of chip level packages. 794-804 - Zunxian Yang, Ying Yu, Xinxin Li, Haifei Bao:
Nano-mechanical electro-thermal probe array used for high-density storage based on NEMS technology. 805-810 - Guang-Ming Zhang, David M. Harvey, Derek R. Braden:
Resolution improvement of acoustic microimaging by continuous wavelet transform for semiconductor inspection. 811-821 - W. Dreyer, F. Duderstadt, S. Eichler, M. Jurisch:
Stress analysis and bending tests for GaAs wafers. 822-835 - Hoh Huey Jiun, Ibrahim Ahmad, Azman Jalar, Ghazali Omar:
Effect of wafer thinning methods towards fracture strength and topography of silicon die. 836-845 - Tong Fang, Michael D. Osterman, Michael G. Pecht:
Statistical analysis of tin whisker growth. 846-849 - M. Yamashita, K. Suganuma:
Improvement in high-temperature degradation by isotropic conductive adhesives including Ag-Sn alloy fillers. 850-858 - Yi-Shao Lai:
On solution schemes for time-independent thermomechanical analysis for structures containing polymeric materials. 859-863 - Bo Tao, Yiping Wu, Han Ding, You-Lun Xiong:
A quantitative method of reliability estimation for surface mount solder joints based on heating factor Qeta. 864-872 - Hamid R. Ghorbani, Jan K. Spelt:
Interfacial thermal stresses in solder joints of leadless chip resistors. 873-884 - Chang-Lin Yeh, Yi-Shao Lai:
Transient fracturing of solder joints subjected to displacement-controlled impact loads. 885-895 - W.-M. Chen, Paul McCloskey, S. Cian O'Mathuna:
Isothermal aging effects on the microstructure and solder bump shear strength of eutectic Sn37Pb and Sn3.5Ag solders. 896-904 - Jeong-Won Yoon, Seung-Boo Jung:
High temperature reliability and interfacial reaction of eutectic Sn-0.7Cu/Ni solder joints during isothermal aging. 905-914 - Yi-Shao Lai, Chin-Li Kao:
Characteristics of current crowding in flip-chip solder bumps. 915-922 - Yasuyuki Morita, Kazuo Arakawa, Mitsugu Todo, Masayuki Kaneto:
Experimental study on the thermo-mechanical effects of underfill and low-CTE substrate in a flip-chip device. 923-929 - Ee-Hua Wong, Yiu-Wing Mai:
New insights into board level drop impact. 930-938 - Cher Ming Tan, Zhenghao Gan, Tai Chong Chai:
Feasibility study of the application of voltage contrast to printed circuit board. 939-948 - Adam Dabrowski, Rafal Dlugosz, Pawel Pawlowski:
Integrated CMOS GSM baseband channel selecting filters realized using switched capacitor finite impulse response technique. 949-958 - Amir Rajabzadeh, Seyed Ghassem Miremadi:
CFCET: A hardware-based control flow checking technique in COTS processors using execution tracing. 959-972 - Jing Lee:
A reliability-driven placement procedure based on thermal-force model. 973-983 - Jonathan Jilesen, F. S. Lien, H. Ahn:
Investigation of increased performance of close series stacked tube axial fans due to inclusion of diffuser element. 984-993
- Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. 994-1000 - Zhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi:
Study of the power capability of LDMOS and the improved methods. 1001-1005 - H.-Y. Kang, Amy H. I. Lee:
Critical dimension control in photolithography based on the yield by a simulation program. 1006-1012 - Bruno Foucher, J. Tomas, F. Mounsi, M. Jeremias:
Life margin assessment with Physics of Failure Tools application to BGA packages. 1013-1018 - Krystyna Siekierska, Pawel Fras, Artur Kokoszka, Tomasz Kostienko, Norbert Lugowski, Dariusz Obrebski, Adam Pawlak, Piotr Penkala, Dariusz Stachanczyk, Marek Szlezak:
Distributed collaborative design of IP components in the TRMS environment. 1019-1024
- Mile K. Stojcev:
F. Mayer-Linderberg, Dedicated Digital Processors: Methods in Hardware/Software System Design, John Wiley & Sons, Ltd., Chichester (2004) ISBN 0-470-84444-2 Hardcover, pp 302, plus XI. 1025-1026
Volume 46, Number 7, July 2006
- Valeriu Filip, Hei Wong, D. Nicolaescu:
Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO2/metal structures. 1027-1034 - S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov:
The post-damage behavior of a MOS tunnel emitter transistor. 1035-1041 - Shih-Hung Chen, Ming-Dou Ker:
Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology. 1042-1049