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Microelectronics Reliability, Volume 58
Volume 58, March 2016
- Francesco Iannuzzo, Mauro Ciappa:
Reliability issues in power electronics. 1-2 - Angelo Raciti, Salvatore Musumeci, Filippo Chimento, Giovanni Privitera:
A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching. 3-11 - Hiroshi Suzuki, Mauro Ciappa:
Electro-thermal simulation of current sharing in silicon and silicon carbide power modules under short circuit condition of types I and II. 12-16 - Paolo Mirone, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace:
On the avalanche ruggedness of optimized termination structure for 600 V punch-through IGBTs. 17-25 - E. Efthymiou, P. Rutter, P. Whiteley:
A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating. 26-32 - Takuo Kikuchi, Mauro Ciappa:
Modeling the threshold voltage instability in SiC MOSFETs by multiphonon-assisted tunneling. 33-38 - Gerald Sölkner:
Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation. 39-50 - Munaf Rahimo, Frank Richter, Fabian Fischer, Umamaheswara Vemulapati, Arnost Kopta, Chiara Corvasce, Silvan Geissmann, Marco Bellini, Martin J. Bayer, Friedhelm Bauer:
The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination. 51-57 - Vladimir N. Popok, Kristian Bonderup Pedersen, Peter Kjær Kristensen, Kjeld Pedersen:
Comprehensive physical analysis of bond wire interfaces in power modules. 58-64 - Bernhard Czerny, Golta Khatibi:
Interface reliability and lifetime prediction of heavy aluminum wire bonds. 65-72 - Resul Saritas, Mahmoud E. Khater, Sangtak Park, T. Dagdelen, Eihab M. Abdel-Rahman, Mustafa Yavuz:
Techniques for dynamic analysis of bonding wire. 73-81 - Christian Herold, Jörg Franke, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz:
Requirements in power cycling for precise lifetime estimation. 82-89 - Pramod Ghimire, Ionut Trintis, Stig Munk-Nielsen, Bjørn Rannestad:
On-state voltage drop based derating/uprating on a MW converter to improve reliability. 90-94 - Susana de Leon, Hugo Calleja, Jesús Mina:
Reliability of photovoltaic systems using seasonal mission profiles and the FIDES methodology. 95-102 - Alain Bensoussan:
How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies. 103-112 - Xiang Wang, Alberto Castellazzi, Pericle Zanchetta:
Observer based dynamic adaptive cooling system for power modules. 113-118 - Markus Andresen, Giampaolo Buticchi, Marco Liserre:
Study of reliability-efficiency tradeoff of active thermal control for power electronic systems. 119-125 - Diego Chiozzi, Mirko Bernardoni, Nicola Delmonte, Paolo Cova:
A simple 1-D finite elements approach to model the effect of PCB in electronic assemblies. 126-132 - Ognjen Gagrica, Mateusz Marzec, Tadeusz Uhl:
Comparison of reliability impacts of two active power curtailment methods for PV micro-inverters. 133-140 - Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He:
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview. 141-150 - Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. 151-157 - Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda:
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS). 158-163 - Alberto Castellazzi, Asad Fayyaz, Gianpaolo Romano, Li Yang, Michele Riccio, Andrea Irace:
SiC power MOSFETs performance, robustness and technology maturity. 164-176 - Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. 177-184 - Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa:
Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor. 185-191 - Zhaoyang Peng, Yiyu Wang, Huajun Shen, Chengzhan Li, Jia Wu, Yun Bai, Kean Liu, Xinyu Liu:
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures. 192-196 - K. V. Smith, J. Haller, Josep M. Guerrero, R. P. Smith, R. Lal, YiFeng Wu:
Lifetime tests of 600-V GaN-on-Si power switches and HEMTs. 197-203 - Ali Ibrahim, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir:
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. 204-210
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