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Jean Coignus
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2020 – today
- 2024
- [c12]Olivier Billoint, Simon Martin, J. Laguerre, L. Hosier, Jean Coignus, Catherine Carabasse, François Andrieu, Laurent Grenouillet:
Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. IMW 2024: 1-4 - [c11]J. Laguerre, Simon Martin, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet:
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. IRPS 2024: 1-7 - 2023
- [c10]J. Laguerre, Marc Bocquet, Olivier Billoint, Simon Martin, Jean Coignus, Catherine Carabasse, Thomas Magis, T. Dewolf, François Andrieu, Laurent Grenouillet:
Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. IMW 2023: 1-4 - [c9]Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus:
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). IRPS 2023: 1-8 - 2022
- [c8]Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, François Aussenac, François Andrieu, François Triozon, Laurent Grenouillet:
Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. ESSCIRC 2022: 125-128 - 2021
- [c7]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSCIRC 2021: 143-146 - [c6]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSDERC 2021: 143-146 - [c5]Riccardo Fontanini, Justine Barbot, Mattia Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, François Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni:
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. ESSDERC 2021: 255-258 - [c4]Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo:
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS 2021: 1-8 - [c3]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. ISCAS 2021: 1-5 - [i1]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. CoRR abs/2107.01853 (2021)
2010 – 2019
- 2017
- [j3]Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra:
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. Microelectron. Reliab. 69: 47-51 (2017) - [j2]Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo:
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79: 281-287 (2017) - [c2]Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo:
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC 2017: 144-147 - [c1]Alexis Krakovinsky, Marc Bocquet, Romain Wacquez, Jean Coignus, Jean-Michel Portal:
Thermal laser attack and high temperature heating on HfO2-based OxRAM cells. IOLTS 2017: 85-89 - 2015
- [j1]Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo:
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55(9-10): 1417-1421 (2015)
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