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2020 – today
- 2023
[c4]Dai Nakajima, Kazuki Nishimura, Mitsuki Watanabe, Tsung-Tse Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou:
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. OFC 2023: 1-3
2010 – 2019
- 2015
- [j8]Tetsuya Suemitsu
:
InP and GaN high electron mobility transistors for millimeter-wave applications. IEICE Electron. Express 12(13): 20152005 (2015) - [c3]Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Junichi Kani, Jun Terada, Taiichi Otsuji:
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. ECOC 2015: 1-3 - 2013
- [j7]Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu:
Site-Selective Epitaxy of Graphene on Si Wafers. Proc. IEEE 101(7): 1557-1566 (2013) - [j6]Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu:
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proc. IEEE 101(7): 1603-1608 (2013) - [c2]Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu:
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. ESSDERC 2013: 115-118 - [c1]Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto:
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. ESSDERC 2013: 318-321 - 2010
- [j5]Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji:
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. IEICE Trans. Electron. 93-C(8): 1286-1289 (2010)
2000 – 2009
- 2007
- [j4]Tetsuya Suemitsu, Masami Tokumitsu:
InP HEMT Technology for High-Speed Logic and Communications. IEICE Trans. Electron. 90-C(5): 917-922 (2007) - 2006
- [j3]Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki:
An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets. IEICE Electron. Express 3(7): 129-135 (2006) - [j2]Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni:
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electron. Express 3(13): 310-315 (2006) - 2002
- [j1]Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama:
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectron. Reliab. 42(1): 47-52 (2002)
Coauthor Index
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