"Field- and current-driven degradation of GaN-based power HEMTs with p-GaN ..."

Isabella Rossetto et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.061

access: open

type: Journal Article

metadata version: 2024-05-07

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Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017)

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