"Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation."

Carmine Abbate et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.07.100

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type: Journal Article

metadata version: 2024-10-06

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Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectron. Reliab. 88-90: 941-945 (2018)

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