"Threshold voltage instability in SiC MOSFETs as a consequence of current ..."

Oriol Avino-Salvado et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.033

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type: Journal Article

metadata version: 2020-02-22

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Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre:
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectron. Reliab. 88-90: 636-640 (2018)

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