"Investigation on the degradation indicators of short-circuit tests in ..."

H. Du et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.039

access: closed

type: Journal Article

metadata version: 2023-09-30

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H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. Microelectron. Reliab. 88-90: 661-665 (2018)

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