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"Impact of carbon impurities on the initial leakage current of AlGaN/GaN ..."

Wardhana A. Sasangka et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.06.048

access: closed

type: Journal Article

metadata version: 2022-03-23

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Wardhana A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson:
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 88-90: 393-396 (2018)

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