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ORCIDVLSI Technology and Circuits 2024: Honolulu, HI, USA
- IEEE Symposium on VLSI Technology and Circuits 2024, Honolulu, HI, USA, June 16-20, 2024. IEEE 2024, ISBN 979-8-3503-6146-9
- Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao:
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. 1-2 - Gerui Zheng, Enze Zhang, Rami Khazaka, Kaizhen Han, Haiwen Xu, Yuxuan Wang, Hyunsoo Yang, Xiao Gong:
First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV Semiconductor. 1-2 - Jee-Eun Yang, Younjin Jang, Narae Han, Ha-Jun Sung, Jung-kyun Kim, Youngkwan Cha, Kwang-Hee Lee, Kyooho Jung, Moonil Jung, Wonsok Lee, Min Hee Cho, Sangwook Kim:
A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications. 1-2 - H. Y. Cheng, Z. L. Liu, A. Majumdar, Alexander Grun, A. Ray, J. Su, Malte J. Rasch, Fabio Carta, Lynne M. Gignac, C. Lavoie, C. W. Cheng, M. Bright Sky, H. L. Lung:
State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications. 1-2 - Gianna Paulin, Paul Scheffler, Thomas Benz, Matheus A. Cavalcante, Tim Fischer, Manuel Eggimann, Yichao Zhang, Nils Wistoff, Luca Bertaccini, Luca Colagrande, Gianmarco Ottavi, Frank K. Gürkaynak, Davide Rossi, Luca Benini:
Occamy: A 432-Core 28.1 DP-GFLOP/s/W 83% FPU Utilization Dual-Chiplet, Dual-HBM2E RISC-V-Based Accelerator for Stencil and Sparse Linear Algebra Computations with 8-to-64-bit Floating-Point Support in 12nm FinFET. 1-2 - Sena Kato, Shu Date, Tao Ruoxin, Yasuto Narukiyo, Hiroki Hayashi, Keito Yuasa, Michihiro Ide, Takashi Tomura, Kenichi Okada, Atsushi Shirane:
A 28GHz 5G NR Wirelessly Powered Relay Transceiver Using Rectifier-Type 4th-Order Sub-Harmonic Mixer. 1-2 - Roberto Rangel, Xiaonong Sun, Ayandev Barman, Rahul Gulve, Savo Bajic, Jingmin Wang, Harry Wang, David B. Lindell, Kiriakos N. Kutulakos, Roman Genov:
23, 000-Exposures/s 360fps-Readout Software-Defined Image Sensor with Motion-Adaptive Spatially Varying Imaging Speed. 1-2 - Ping-Sheng Wu, Yu-Cheng Lin, Chia-Hsiang Yang:
A 99.2TOPS/W Transformer Learning Processor with Approximated Attention Score Gradient Computation and Ternary Vector-Based Speculation. 1-2 - Qiankai Cao, Juin Chuen Oh, Jie Gu:
A Mixed-signal 3D Footstep Planning SoC for Motion Control of Humanoid Robots with Embedded Zero-Moment-Point based Gait Scheduler and Neural Inverse Kinematics. 1-2 - Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye:
Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory. 1-2 - Geonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang:
Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory. 1-2 - Yu-Chen Kuo, Hong-Teng Wu, Guan-Ye Chen, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li:
A 12V-to-1V 100A Inverted Pyramid Trans-Inductor Voltage Regulator Converter with 93.6% High Efficiency and Fast Transient Response. 1-2 - Kshitiz Tyagi, Behzad Razavi:
A 56-Gb/s 17-mW NRZ Receiver in 0.018 mm2. 1-2 - Ji-Hoon Suh, Haidam Choi, Yoontae Jung, Sohmyung Ha, Minkyu Je:
A 5.7kfps Fast Neural Electrical Impedance Tomography IC Based on Incremental Zoom Structure with Baseline Cancellation for Peripheral Nerve Monitoring Systems. 1-2 - Dong-Myung Choi, Yikui Dong, Roan Nicholson, Frank Liu, Wenyan Jia, Vadim Levin, Mike He, Sameer Pradhan, Jieqiong Du, Michael De Vita, Amanda Tran, Reza Navid, Sitaraman Iyer, Rui Song:
A 4.6pJ/b 64Gb/s Transceiver Enabling PCIe 6.0 and CXL 3.0 in Intel 3 CMOS Technology. 1-2 - Ichiro Somada, Akihito Hirai, Keigo Nakatani, Akinori Taira, Kazuaki Ishioka, Takuma Nishimura, Koji Yamanaka:
Terahertz Sensing with CMOS-RFIC - Feasibility Verification for Short-Range Imaging using 300GHz MIMO Radar -. 1-2 - Hiroaki Arimura, Hans Mertens, Jacopo Franco, L. Lukose, W. Maqsood, S. Brus, Thomas Chiarella, A. Impagnatiello, S. Homkar, V. K. Mootheri, C. Yin, G. Alessio Verni, M. Givens, L. Petersen Barbosa Lima, S. Biesemans, N. Horiguchi:
Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration. 1-2 - Xiaolin Yang, Joan Aymerich, Philippe Coppejans, Wen-Yang Hsu, Chutham Sawigun, Jose Cisneros-Fernández, Andrea Lodi, Maribel Caceres Rivera, Bernardo Tacca, Matt McDonald, Hasan Mahmud-UI, Barundeb Dutta, Jan Putzeys, Carolina Mora Lopez:
A Highly-Integrated 1536-Channel Quad-Shank Monolithic Neural Probe in 55nm CMOS for Full-Band Raw-Signal Recording. 1-2 - Kiseok Lee, Hongjun Lee, Hyungeun Choi, Jeongsu Kim, Kyunghwan Kim, Moonyoung Jeong, Soohyun Bae, Hyebin Kim, Jiyun Lee, Minsoo Kim, Keunnam Kim, Huijung Kim, Sungmin Park, Taejin Park, Jin-Woo Han, Jeonghoon Oh, Yong Kwan Kim, Sungsoo Yim, Bongsoo Kim, Jemin Park, Jaihyuk Song:
Cell to Core-Periphery Overlap (C2O) Based on BCAT for Next Generation DRAM. 1-2 - Sanghoon Myung, Donggwan Shin, Kyeyeop Kim, Yunji Choi, Gijae Kang, Songyi Han, Jaehoon Jeong, Daesin Kim:
A New Industry Standard Compact Model Integrating TCAD Into SPICE. 1-2 - Tim Keller, Rosario M. Incandela, Xi Chen, Hesam Ghiasi, Mohsen Khodaee, Sina Arjmandpour, Jiawei Liao, H. Long, Tobias Götschi, Jonas Widmer, Taekwang Jang:
A 0.29pJ/Step Fully Discrete-Time Charge Domain Bridge-to-Digital Converter for Force Sensing in Spinal Implants Using RC Bridge. 1-2 - Nuriel N. M. Rozsa, Zhao Chen, Taehoon Kim, Peng Guo, Yannick Hopf, Jason D. Voorneveld, Djalma Simões dos Santos, Emile Noothout, Zu-Yao Chang, Chao Chen, Vincent A. Henneken, Nico de Jong, Hendrik J. Vos, Johan G. Bosch, Martin D. Verweij, Michiel A. P. Pertijs:
A 2000-Volumes/s 3D Ultrasound Imaging Chip with Monolithically-Integrated 11.7×23.4mm2 2048-Element CMUT Array and Arbitrary-Wave TX Beamformer. 1-2 - Matteo Dalla Longa, Francesco Conzatti, Omar Ismail, John G. Kauffman, Maurits Ortmanns:
A 470μW, 102.6dB-DR, 20kHz BW Calibration-Free ΔΣ Modulator with SFDR in Excess of 110dBc using an Intrinsically Linear 13-Level DAC. 1-2 - Nereo Markulic, Johan Nguyen, Jorge Luis Lagos-Benites, Ewout Martens, Jan Craninckx:
A 10GS/s Hierarchical Time-Interleaved ADC for RF-Sampling Applications. 1-2 - Rohan Doshi, Massimo Giordano, Justin Olah, Zhidong Cao, Moon Hyung Jang, Luke R. Upton, Athanasios Ramkaj, Boris Murmann:
Medusa: A 0.83/4.6μJ/Frame 86/91.6%-CIFAR-10 TinyML Processor with Pipelined Pixel Streaming of Bottleneck Layers in 28nm CMOS. 1-2 - Animesh Gupta, Japesh Vohra, Massimo Alioto:
CogniVision: End-to-End SoC for Always-on Smart Vision with mW Power in 40nm. 1-2 - Alan Smith, Gabriel H. Loh, John J. Wuu, Samuel Naffziger, Tyrone Huang, Hugh McIntyre, Ramon Mangaser, Wonjun Jung, Raja Swaminathan:
AMD Instinct™ MI300X Accelerator: Packaging and Architecture Co-Optimization. 1-2 - Seunghwan Lee, Jeongjin Cho, Shinyoung Choi, Sung Yoon Min, Eunjung Lee, Minji Jung, Kyoungmok Son, Hyunchaul Jeong, Heetak Han, Sachoun Park, Sanghyuck Moon, Seungki Jung, Junseok Yang, Taesub Jung, Howoo Park, Bumsuk Kim, Kyungho Lee, Jesuk Lee:
A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology. 1-2 - Qiaochu Zhang, Shiyu Su, Baishakhi Rani Biswas, Sandeep Gupta, Mike Shuo-Wei Chen:
Synthesizable 10-bit Stochastic TDC Using Common-Mode Time Dithering and Passive Approximate Adder with 0.012mm2 Active Area in 12nm FinFET. 1-2 - Yi Zhang, Minzhe Tang, Jian Pang, Zheng Li, Dongfan Xu, Dingxin Xu, Yuncheng Zhang, Kazuaki Kunihiro, Hiroyuki Sakai, Atsushi Shirane, Kenichi Okada:
A 28GHz 4-Stream Time-Division MIMO Phased-Array Receiver Utilizing Nyquist-Rate Fast Beam Switching for 5G and Beyond. 1-2 - Jorge Lagos, Pratap Tumkur Renukaswamy, Nereo Markulic, Ewout Martens, Jan Craninckx:
A Single-Channel, 1-GS/s, 10.91-ENOB, 81-dB SFDR, 9.2-fJ/conv.-step, Ringamp-Based Pipelined ADC with Background Calibration in 16nm CMOS. 1-2 - Xuchu Mu, Yang Jiang, Rui Paulo Martins, Pui-In Mak:
A Fully Integrated 48-V GaN Driver Using Parallel-Multistep-Series Reconfigurable Switched-Capacitor Bank Achieving 7.7nC/mm2 On-Chip Bootstrap Driving Density. 1-2 - Tsung-Yu Chen, Kris Chuang, Wensen Hung, Tsung-Shu Lin, Yen-Ming Chen:
Package - System Thermal Modeling and New Material. 1-2 - Po-Hsun Chu, Cheng-Tse Tsai, Yu-Siang Chou, Nitish Kumar, Shu-Ping Lin, Yu-Te Liao:
A Pulsed Electrochemistry Readout IC with Slew-rate Booting Technique and Phase-domain ΔΣ ADC for Si-Nanowire Electrical Double-layer Capacitance Measurement. 1-2 - W.-Y. Woon, J.-H. Jhang, K.-K. Hu, C.-C. Shih, J.-F. Hsu, J.-P. Lin, Y. Wu, Anna Kasperovich, Mohamadali Malakoutian, R. Soman, J. Kim, H.-K. Wei, M. Nomura, S. Chowdhury, Szuya Sandy Liao:
Integration and Characterization of High Thermal Conductivity Materials for Heat Dissipation in Stacked Devices. 1-2 - Chao Chen, Zhu Yuan, Peng Cao, Jiawei Xu, Zhiliang Hong:
A 71.5-dB SNDR 475-MS/s Ringamp-Based Pipelined SAR ADC with On-Chip Bit-Weight Calibration. 1-2 - Erik Jens Loscalzo, Martin Cochet, Joseph Zuckerman, Samira Zalias, Michael Lekas, Stephen Cahill, Tianyu Jia, Karthik Swaminathan, Maico Cassel dos Santos, Davide Giri, Hesam Sadeghi, Joseph Meyer, Noah Sturcken, David Brooks, Gu-Yeon Wei, Luca P. Carloni, Pradip Bose, Kenneth L. Shepard:
A 400-ns-Settling- Time Hybrid Dynamic Voltage Frequency Scaling Architecture and Its Application in a 22-Core Network-on-Chip SoC in 12-nm FinFET Technology. 1-2 - DongSeok Cho, Byungchoul Park, Hyun-Seung Choi, Myung-Jae Lee, Youngcheol Chae:
A 30fps 64×64 CMOS Flash LiDAR Sensor with Push-Pull Analog Counter Achieving 0.1% Depth Uncertainty at 70m Detection Range. 1-2 - Qi Jiang, Koustav Jana, Kasidit Toprasertpong, Shuhan Liu, H.-S. Philip Wong:
Positive Bias Stress Measurement Guideline and Band Analysis for Evaluating Instability of Oxide Semiconductor Transistors. 1-2 - Jinpyo Han, Houk Lee, Junhee Cho, Heesung Lee, Seong-Jin Kim, Jung-Hoon Chun, Jaehyuk Choi:
A Digital Dynamic Vision Sensor with SPAD Pixels and Multi-Event Generation for Motion/Vibration-Adaptive Detection. 1-2 - K. S. Choi, S. H. Kim, J. W. Seo, H. S. Kang, S. W. Chu, S. W. Bae, J. H. Kwon, G. S. Kim, Y. T. Park, J. H. Kwak, D. I. Song, S. M. Park, Y. T. Kim, K. C. Jang, J. S. Cho, H. S. Lee, B. H. Lee, J. W. Park, J. H. Lee, H. H. Kwon, D. S. You, C. S. Hyun, J. J. Lee, S. C. Lee, I. D. Kim, J. H. Myung, H. S. Won, J. H. Chun, K. H. Kim, J. H. Kang, S. B. Kim, K. H. Lee, S. O. Chung, S. S. Kim, I. S. Jin, B. K. Lee, C. W. Kim, J. Park, S. Y. Cha:
A Three Dimensional DRAM (3D DRAM) Technology for the Next Decades. 1-2 - Hyun-chul Hwang, Min-su Kim, Daeseong Lee, Yong-geol Kim, Byung-su Kim, Kun-hyuk Kang:
An Area-Efficient True Single-Phase Clocked and Conditional Capture Flip-Flop for Ultra-Low-Power Operations in 7nm Fin-FET Process. 1-2 - A. Sayed, Michel Vasilevski, M. T. Abdelmomen, Shadi Turk, Ahmed A. Ghoniem, C. Perez, C. Voillequin, Haralampos-G. Stratigopoulos, Marie-Minerve Louërat, E. Wantiez, Hassan Aboushady:
A 10.8GS/s, 84MHz-BW RF Bandpass ΣΔ ADC with a 89dB-SFDR and a 62dB-SNDR for LTE/5G Receivers. 1-2 - Sally Amin, Harish Krishnamurthy, Huong Do, Claudio Alvarez, Mike Hill, Kaladhar Radhakrishnan, Vivek De, Sheldon Weng, Krishnan Ravichandran, Jim Tschanz, Wilfred Gomes, Jonathan Douglas:
A 5.4V-Vin, 9.3A/mm2 10MHz Buck IVR Chiplet in 55nm BCD Featuring Self-Timed Bootstrap and Same-Cycle ZVS Control. 1-2 - Ashish Pal, Sefa Dag, Pratik B. Vyas, Gregory Costrini, Vinod Reddy, Veeraraghavan Basker, Allen Yeong, Benjamin Colombeau, Bala Haran, Subi Kengeri, El Mehdi Bazizi:
Material, Process and System Level Analysis for Parasitic Reduction of Next Generation Logic Technology in Conjunction with Backside Power Delivery. 1-2 - Ye-Dam Kim, Jae-Hyun Chung, Kent Edrian Lozada, Chang-Un Park, Kun-Woo Park, Kwan-Hoon Song, Young-Hun Moon, Min-Jae Seo, Seung-Tak Ryu:
A 100kHz-BW 99dB-DR Continuous-Time Tracking-Zoom Incremental ADC with Residue-Gain Switching and Digital NC-FF. 1-2 - Pao-Shu Liu, Yu-Hsiang Huang, Chih-Cheng Hsieh:
A Low-OSR 5th-Order Noise Shaping SAR ADC Using EF-EF-CIFF Structure with PVT-Robust Differential V-T-V Converter. 1-2 - Yang Wang, Xiaolong Yang, Yubin Qin, Zhiren Zhao, Ruiqi Guo, Zhiheng Yue, Huiming Han, Shaojun Wei, Yang Hu, Shouyi Yin:
A 22nm 54.94TFLOPS/W Transformer Fine-Tuning Processor with Exponent-Stationary Re-Computing, Aggressive Linear Fitting, and Logarithmic Domain Multiplicating. 1-2 - Sungjin Park, Kwanghyun Shin, Dongkwon Lee, Minyoung Kang, Sunwoo Lee, Youngmin Park, Mingoo Seok, Dongsuk Jeon:
A 5.6µW 10-Keyword End-to-End Keyword Spotting System Using Passive-Averaging SAR ADC and Sign-Exponent-Only Layer Fusion with 92.7% Accuracy. 1-2 - Kyunghwan Min, Jahoon Jin, Soo-Min Lee, Sodam Ju, Jisu Yook, Jihoon Lee, Yunji Hong, Sungsik Park, Sang-Ho Kim, Jongwoo Lee, Hyungjong Ko:
A 20Gb/s/pin Single-Ended PAM-4 Transceiver with Pre/Post-Channel Switching Jitter Compensation and DQS-Driven Biasing for Low-Power Memory Interfaces. 1-2 - Hyungjoo Cho, Dongyoon Lee, Hoyong Sung, Heewon Choee, Ji-Hoon Suh, Injun Choi, Donghee Cho, Sohmyung Ha, Minkyu Je:
An Intra-Body-Power-Transfer System Energized by an Electromagnetic Energy Harvester for Powering Wearable Sensor Nodes. 1-2 - Maryam Rofougaran, Reza Rofougaran:
Wireless Connectivity in a Future Hyperconnected World. 1-4 - Ling Wang, Longjie Zhong, Zhangming Zhu:
A 1.5 V 132 dBSPL AOP Digital Readout Circuit for MEMS Microphone Using Self-Adaption Loop. 1-2 - Yusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono, Peter Reinig, Maximilian Lederer, Konrad Seidel, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Taku Umebayashi, Kentaro Akiyama:
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. 1-2 - Pratik B. Vyas, Ludovico Megalini, Ashish Pal, Joshua Holt, Archana Kumar, Stephen Weeks, Charisse Zhao, Lucien Date, Hansel Lo, Michel Khoury, Safdar Muhammad, Fabian Piallat, Ricky Fang, William Charles, Pratim Palit, Jinghe Yang, Qintao Zhang, Jang Seok Oh, Bryan Turner, Samphy Hong, Aswin Prathap Pitchiya, Benjamin Briggs, Jiao Yang, Dae Yang, Fengshou Wang, Joseph Lee, Gopal Prabhu, Dustin Ho, Carlos Caballero, Durga Chaturvedula, Zheng Yuan, Yi Zheng, David A. Britz, Stephen Krause, Raghav Sreenivasan, Michael Chudzik, Subi Kengeri, Siddarth A. Krishnan, El Mehdi Bazizi:
Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology. 1-2 - Adelson Chua, Aviral Pandey, Ryan Kaveh, Sina Faraji Alamouti, Justin Doong, Rikky Muller:
SPIRIT: A Seizure Prediction SoC with a 17.2nJ/cls Unsupervised Online-Learning Classifier and Zoom Analog Frontends. 1-2 - Junsang Park, Jinwoo Park, Jaemin Hong, Sun-Jae Park, Dongsuk Lee, Sungno Lee, Hyochul Shin, Kyung-Hoon Lee, Byeongwoo Koo, Youngjae Cho, Michael Choi, Jongshin Shin:
A 12-bit 10GS/s Time-Interleaved SAR ADC with Even/Odd Channel-Correlated Absolute Error-Based Over-Nyquist Timing-Skew Calibration in 5nm FinFET. 1-2 - T. Takagi, T. Ninomiya, M. Niwa, S. Obara, T. Momose, Y. Shimogaki, M. Nomura, H. Fujioka, M. Mori, T. Kuroda:
High Thermal Conductivity AlN Films for Advanced 3D Chiplets. 1-2 - Seongkyung Kim, Junkyo Jeong, Eunyu Choi, Jinyoung Kim, Hyewon Shim, Shin-Young Chung, Paul Jung:
Hot-Carrier-Degradation Characterization for Accurate End-of-Life Prediction with 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FET. 1-2 - T. V. Dinh, S.-W. Tam, A. J. Scholten, L. Tondelli, R. M. T. Pijper, S. H. Kondapalli, J. Xie, A. Wong, I. To, R. Asanovski, L. Selmi:
Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology. 1-2 - Zhong Tang, Haining Wang, Xiaopeng Yu, Kofi A. A. Makinwa, Nianxiong Nick Tan:
A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C (3σ) from -40°C to 125°C in 22nm CMOS. 1-2 - Wei Lu, Jie Zhang, Yi-Hui Wei, Hsu-Ming Hsiao, Sih-Han Li, Chao-Kai Hsu, Chih-Cheng Hsiao, Feng-Hsiang Lo, Shyh-Shyuan Sheu, Chin-Hung Wang, Wei-Chung Lo, Shih-Chieh Chang, Hung-Ming Chen, Kuan-Neng Chen, Po-Tsang Huang:
Scalable Embedded Multi-Die Active Bridge (S-EMAB) Chips with Integrated LDOs for Low-Cost Programmable 2.5D/3.5D Packaging Technology. 1-2 - Naomi Yoshida, Ilanit Fisher, He Ren, Chi-Chou Lin, Chenfei Shen, Yongjing Lin, Yi Xu, Michael S.-. C. Chen, Mehul Naik:
Replacement Metal Gate Process Extendible Beyond 2-nm Node with Superior Gate Conductivity. 1-2 - Chi-Yu Chen, Tz-Wun Wang, Po-Jui Chiu, Sheng-Hsi Hung, Chang-Lin Go, Xiao-Quan Wu, Yu-Ting Huang, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6% Peak Efficiency. 1-2 - Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude:
Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. 1-2 - M. G. Gottwald, Guohan Hu, Philip Louis Trouilloud, L. Rehm, C. Safranski, G. Kim, S. L. Brown, J. Bruley, C. P. D'Emic, O. Gunawan, H. Jung, C. Lavoie, J. Lee, J. Liang, M. Robbins, J. Z. Sun, P. Hashemi, Daniel Christopher Worledge:
First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices. 1-2 - Nathaniel Safron, Tzu-Ang Chao, Shengman Li, Shreyam Natani, San Lin Liew, Carlo Gilardi, Hsin-Yuan Chiu, Sheng-Kai Su, Andrew Bechdolt, Gilad Zeevi, Zichen Zhang, Matthias Passlack, Vincent D.-H. Hou, Harshil Kashyap, Chao-Hsin Chien, Prabhakar Bandaru, Andrew C. Kummel, H.-S. Philip Wong, Subhasish Mitra, Gregory Pitner, Iuliana P. Radu:
High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure. 1-2 - Chen Kong Teh, Te Bi, Shuichi Ito, Takashi Kurihara:
730-790mA/mm2 48V-to-1V Integrated Hybrid DC-DC Converters Based on a Star-Delta Switching Network with 5x/8x Duty Expansion. 1-2 - Sander Derksen, Maël Demarets, Gerard Villar Pique, Fabio Sebastiano:
A 0.9V Rail-to-Rail Ultra-Low-Power Fully Integrated Clock Generator Achieving 23fJ/Cycle in 28nm CMOS. 1-2 - Guan Feng, Yu Li, Hao Jiang, Xiaodong Wang, Yize Sun, Yingfen Wei, Qi Liu, Ming Liu:
Comprehensive Analysis of Duty-Cycle Induced Degradations in HfxZr1-xO2-Based Ferroelectric Capacitors: Behavior, Modeling, and Optimization. 1-2 - Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon:
A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm2 at 0.60V for Auto-G1 Applications. 1-2 - Hyungdeok Lee, Guhyun Kim, Dayeon Yun, Ilkon Kim, Yongkee Kwon, Euicheol Lim:
Cost-Effective LLM Accelerator Using Processing in Memory Technology. 1-2 - Ruichen Wan, Wei Deng, Qixiu Wu, Haikun Jia, W. Rui, Angxiao Yan, Haowen Cai, Sanming Hu, Zhihua Wang, Baoyong Chi:
A 132-to-163 GHz 4TX/4RX Distributed MIMO FMCW Radar Transceiver with Real-Time Reference-Clock Synchronization Enabling Cooperative Coherent Multistatic Imaging System. 1-2 - Sicheng Han, Yun Wang, Yunhao Li, Wen Zuo, Wei Li, Yue Lin, Hongtao Xu:
A 140-Gbps 1-to-21-GHz Ultra-Wideband LNA Achieving 1.95-to-3-dB NF Using Gm-Assisted-Feedback Noise Suppression Technique in 40nm Bulk CMOS. 1-2 - S.-C. Chang, C. Neumann, B. Granados Alpizar, S. Atanasov, J. Peck, N. Kabir, Y.-C. Liao, S. Shivaraman, Wriddhi Chakraborty, N. Haratipour, I-Cheng Tung, V. Nikitin, G. Allen, T. Hoff, A. Oni, T. Tronic, A. Roy, H. Li, F. Hamzaoglu, M. Metz, I. Young, J. Kavalieros, U. Avci:
Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOS. 1-2 - Sumi Lee, Chang Niu, Yizhi Zhang, Haiyan Wang, Peide D. Ye:
Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO. 1-2 - Junsoo Kim, Hyun Jung Lee, Sung Ho Jang, Jun Bum Lee, Ilgweon Kim, Jeonghoon Oh, Jemin Park, Jaihyuk Song:
A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors. 1-2 - H. J. Li, K. P. Chang, C. E. Chen, W. T. Hsieh, H. H. Kuo, C. C. Huang, H. C. Chen, Z. H. Ya, H. Y. Chen, J. D. Jin, S. H. Yang, Y. W. Ting, K. C. Tseng, K. C. Huang, Harry Chuang:
A Novel Phase Change Material RF Switch with 16nm Technology to Achieve Low Voltage and Low Ron*Coff for mmWave. 1-2 - Victor Moroz, Xiaopeng Xu, Alexei Svizhenko, Xi-Wei Lin, Sergey Popov, Henry Sheng, Kenneth Larsen:
3DIC System-Technology Co-Optimization with a Focus on the Interplay of Thermal, Power, Timing, and Stress Effects. 1-2 - Sunbin Deng, Jungyoun Kwak, Junmo Lee, Dyutimoy Chakraborty, Jaewon Shin, Omkar Phadke, Sharadindu Gopal Kirtania, Chengyang Zhang, Khandker Akif Aabrar, Shimeng Yu, Suman Datta:
Demonstration of On-Chip Switched-Capacitor DC-DC Converters using BEOL Compatible Oxide Power Transistors and Superlattice MIM Capacitors. 1-2 - Qi Zhang, Jiaqi Dong, Xinwen Zhang, Yekan Chen, Zipeng Cheng, Bo Zhao, Yuxuan Luo:
A 430-μA 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control. 1-2 - Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong, Peide D. Ye:
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2.V-1·s-1Using HZO-Based Higher-k Linear Dielectric. 1-2 - Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
First Demonstration of BEOL-Compatible 3D Vertical FeNOR. 1-2 - Davide Resnati, Gianpietro Carnevale, Shyam Surthi, Chris M. Carlson, Matthew Thorum, Terry Kim, Emilio Camerlenghi, Richard Hill:
A Confined Storage Nitride 3D-NAND Cell with WL Airgap for Cell-To-Cell Interference Reduction and Improved Program Performances. 1-2 - T. C. Kao, M. J. Huang, Y. R. Liu, Y. K. Wang, J. C. Guo, Steve S. Chung:
An Ultra-Low Voltage Auger-Recombination Enhanced Hot Hole Injection Scheme in Implementing a 3 Bits per Cell e-DRAM CIM Macro for Inference Accelerator. 1-2 - Bo-Jheng Shih, Yu-Ming Pan, Hao-Tung Chung, Chieh-Ling Lee, I-Chun Hsieh, Nein-Chih Lin, Chih-Chao Yang, Po-Tsang Huang, Hung-Ming Chen, Chiao-Yen Wang, Huan-Yu Chiu, Huang-Chung Cheng, Chang-Hong Shen, Wen-Fa Wu, Tuo-Hung Hou, Kuan-Neng Chen, Chenming Hu:
3DIC with Stacked FinFET, Inter-Level Metal, and Field-Size (25×33mm2) Single-Crystalline Si on SiO2 by Elevated-Epi. 1-2 - Pruek Vanna-Iampikul, Hang Yang, Jungyoun Kwak, Joyce X. Hu, Amaan Rahman, Nesara Eranna Bethur, Callie Hao, Shimeng Yu, Sung Kyu Lim:
Back-side Design Methodology for Power Delivery Network and Clock Routing. 1-2 - Chih-Sheng Lin, Bo-Cheng Chiou, Yin-Jia Yang, Jian-Wei Su, Kuo-Hua Tseng, Yun-Ting Ho, Chih-Ming Lai, Sih-Han Li, Tian-Sheuan Chang, Shan-Ming Chang, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou:
Empowering Local Differential Privacy: A 5718 TOPS/W Analog PUF-Based In-Memory Encryption Macro for Dynamic Edge Security. 1-2 - Taejune Jeon, Byeongseol Kim, Changuk Lee, Danbi Ahn, Daerl Park, Jaesuk Sung, Hee Young Kim, Heonjin Choi, Joonsung Bae, Youngcheol Chae:
A Wireless Neurostimulator Using Body-Coupled Link for Multisite Stimulation in Freely Behaving Animals. 1-2 - A. Divay, O. Valorge, C. Dubarry, M. Medbouhi, R. Franiatte, D. Mermin, R. Velard, Y. Gobil, F. Morisot, Erwan Morvan, Ismael Charlet, Luca Lucci, J. Lugo, Xavier Garros:
Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. 1-2 - Ahmad Bahai:
Making Sense at the Edge. 1-2 - Inhwan Cho, Moo-Yeol Choi, Jaehyeok Byun, Ji-Hun Lee, Myungjin Lee, Dongsu Kim, Jongwoo Lee:
A 5.8W, 0.00086% THD+N, 118dB PSRR Class-D Audio Amplifier with Passive Output Common-Mode Compensation Technique for Wide Output Power Range. 1-2 - Hangxing Liu, Fuze Jiang, Adam Y. Wang, Zhikai Huang, Ying Kong, Marco Saif, Dongwon Lee, Thomas Burger, Jing Wang, Hua Wang:
Highly Sensitive Multimodal CMOS Antifouling Sensor Array with Multi-Use Electrodes for Single-Cell-Level Profiling of Biophysical and Biochemical Parameters. 1-2