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2020 – today
- 2024
[j6]Yusun Ahn, Haneul Choi, Ryeong-hee Choi, Sujin Ahn, Byungseon Sean Kim:
BIM-based augmented reality navigation for indoor emergency evacuation. Expert Syst. Appl. 255: 124469 (2024)- [c9]Daewon Ha, Y. Lee, S. Yoo, W. Lee, M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H. Lee, J. H. Bae, K. J. Moon, C. Sung, M. Hong, D. G. Cho, K. Lee, S. W. Park, K. Park, Bong Jin Kuh, S. Hyun, Sujin Ahn, J. H. Song:
Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node. IMW 2024: 1-4 - [c8]Ilho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Jinseong Heo:
A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND. IRPS 2024: 9 - [c7]Jaehyun Park, Juhun Park, Kyuman Hwang, Jinchan Yun, Dahye Kim, Sungil Park, Jejune Park, Jinwook Yang, Jae Won Jeong, Chuljin Yun, Jinho Bae, Sam Park, Daihong Huh, Sanghyeon Kim, Seungeun Baek, Suk Yang, Inhae Zoh, Junghan Lee, Tae-sun Kim, Younsu Ha, Sun-Jung Lee, Sang Wuk Park, Bong Jin Kuh, Daewon Ha, Sangjin Hyun, Sujin Ahn, Jaihyuk Song:
Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j5]Sujin Ahn
, Minhae Kwon:
Reproduction Factor Based Latent Epidemic Model Inference: A Data-Driven Approach Using COVID-19 Datasets. IEEE J. Biomed. Health Informatics 27(3): 1259-1270 (2023) - [c6]Soochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyungmoon Kim, Sejie Takaki, Yujeong Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur:
Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production. IMW 2023: 1-4 - [c5]Kyungmoon Kim, Yujeong Seo, Sejun Park, Woojae Jang, Dongho Yoo, Joonsung Lim, Il-Han Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur:
High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash. VLSI Technology and Circuits 2023: 1-2 - [c4]Changhwan Lee, Min-Tai Yu, Sejun Park, Hoki Lee, Bio Kim, Suhwan Lim, Jaeduk Lee, Sung-Hun Lee, Mincheol Park, Sujin Ahn, Sunghoi Hur:
Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c3]Joonsung Lim, Soochan Chung, Dong-Hyeon Ko, Suk-Kang Sung, Kyungyoon Noh, Sujin Ahn, Jai Hyuk Song:
Development of 7th generation 3D VNAND Flash Product with COP structure for Growing Demand in Storage Market. ICEIC 2022: 1-4 - 2021
- [j4]Jieun Park, Su-Jin Ahn, Hyeonjong Lee, Gunwoo Noh:
Implant placement in the removable mandibular advancement device for completely edentulous patients: a finite element study. J. Comput. Des. Eng. 8(1): 140-148 (2021)
2010 – 2019
- 2014
- [j3]Sujin Ahn, Hun Wi, Tong In Oh, Alistair Lee McEwan, Sung Chan Jun, Eung Je Woo:
Continuous Nondestructive Monitoring Method Using the Reconstructed Three-Dimensional Conductivity Images via GREIT for Tissue Engineering. J. Appl. Math. 2014: 562176:1-562176:11 (2014) - 2012
- [c2]Youngdon Choi, Ickhyun Song, Mu-Hui Park, Hoeju Chung, Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Dukmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaewhan Kim, Yong-jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, KiSeung Kim, Han-Sung Joo, KwangJin Lee, Yeong-Taek Lee, Jei-Hwan Yoo, Gitae Jeong:
A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. ISSCC 2012: 46-48 - 2011
- [c1]Byeungchul Kim, Yoon-Jong Song, Sujin Ahn, Younseon Kang, Hoon Jeong, Dongho Ahn, Seokwoo Nam, Gitae Jeong, Chilhee Chung:
Current status and future prospect of Phase Change Memory. ASICON 2011: 279-282
2000 – 2009
- 2005
- [j2]Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim:
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). IEEE J. Solid State Circuits 40(1): 293-300 (2005) - 2003
- [j1]Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim:
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38(11): 1906-1910 (2003)
Coauthor Index
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