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2020 – today
- 2024
[c13]Hyuk Je Kwo, Hyung Suk Yu, Bongman Choi, Jinseon Yeom, Hyungsuk Kim, Tae-Min Park, Jaeyong Jeong, Eun-Kyoung Kim:
A Valid Experimental Design of the Lifetime Prediction for NAND Cell Oxide. IRPS 2024: 1-6- [c12]Seong Kwang Kim, Hyeongrak Lim, Jaeyong Jeong, Young-Keun Park, Jejune Park, Sungil Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, Sanghyeon Kim:
Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility. VLSI Technology and Circuits 2024: 1-2 - [c11]Nahyun Rheem, Jaeyong Jeong, Yoon-Je Suh, Chan Jik Lee, Bong Ho Kim, Joon Pyo Kim, Seong Kwang Kim, Hyeongrak Lim, Jongmin Kim, Dae-Hwan Ahn, Jae-Hoon Han, Jongwon Lee, Sanghyeon Kim:
First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c10]Jaeyong Jeong, Seong Kwang Kim, Yoon-Je Suh, Jisung Lee, Joonyoung Choi, Juhyuk Park, Joon Pyo Kim, Bong Ho Kim, Younjung Jo, Seung-Young Park, Jongmin Kim, Sanghyeon Kim:
Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing. VLSI Technology and Circuits 2023: 1-2 - [c9]Gooyoung Kim, Youngseon Moon, Jongmin Kim, Jaeyong Jeong, Eun-Kyoung Kim, Sunghoi Hur:
Kernel Smoothing Technique Based on Multiple-Coordinate System for Screening Potential Failures in NAND Flash Memory. VTS 2023: 1-7 - 2022
- [c8]Jaeyong Jeong, Seong Kwang Kim, Jongmin Kim, Dae-Myeong Geum, Jisung Lee, Seung-Young Park, Sanghyeon Kim:
3D stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems. VLSI Technology and Circuits 2022: 328-329 - [c7]Dae-Myeong Geum, Jinha Lim, Junho Jang, Seungyeop Ahn, SeongKwang Kim, Joonsup Shim, Bong Ho Kim, Juhyuk Park, Woo Jin Baek, Jaeyong Jeong, Sanghyeon Kim:
A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%). VLSI Technology and Circuits 2022: 413-414 - 2021
- [j4]Jaeyong Jeong
, Sanghyun Ha, Donghyun You:
An immersed interface method for acoustic wave equations with discontinuous coefficients in complex geometries. J. Comput. Phys. 426: 109932 (2021)
2010 – 2019
- 2017
- [j3]Jaeyong Jeong, Youngsun Song, Sangwook Shane Hahn, Sungjin Lee, Jihong Kim:
Dynamic Erase Voltage and Time Scaling for Extending Lifetime of NAND Flash-Based SSDs. IEEE Trans. Computers 66(4): 616-630 (2017) - 2016
- [j2]Keonsoo Ha, Jaeyong Jeong, Jihong Kim:
An Integrated Approach for Managing Read Disturbs in High-Density NAND Flash Memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35(7): 1079-1091 (2016) - [c6]Jisung Park, Jaeyong Jeong, Sungjin Lee, Youngsun Song, Jihong Kim:
Improving performance and lifetime of NAND storage systems using relaxed program sequence. DAC 2016: 63:1-63:6 - 2015
- [c5]Jaeyong Jeong, Youngsun Song, Jihong Kim:
Flashdefibrillator: a data recovery technique for retention failures in NAND flash memory. NVMSA 2015: 1-6 - 2014
- [c4]Jaeyong Jeong, Sangwook Shane Hahn, Sungjin Lee, Jihong Kim:
Lifetime improvement of NAND flash-based storage systems using dynamic program and erase scaling. FAST 2014: 61-74 - 2013
- [c3]Keonsoo Ha, Jaeyong Jeong, Jihong Kim:
A read-disturb management technique for high-density NAND flash memory. APSys 2013: 13:1-13:6 - [c2]Jaeyong Jeong, Sangwook Shane Hahn, Sungjin Lee, Jihong Kim:
Improving NAND Endurance by Dynamic Program and Erase Scaling. HotStorage 2013 - 2012
- [j1]Chulbum Kim, Jinho Ryu, Tae-Sung Lee, Hyunggon Kim, Jaewoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, Inyoul Lee, Dooseop Lee, Pansuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Kwang-Il Park, Jin-Man Han, Duheon Song, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. IEEE J. Solid State Circuits 47(4): 981-989 (2012) - [c1]Seung-Hwan Shin, Dong-Kyo Shim, Jaeyong Jeong, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, Tae-Young Kim, Hyun Wook Park, Hyun-Jun Yoon, Youngsun Song, Yoon-Hee Choi, Sang-Won Shim, Yang-Lo Ahn, Ki-Tae Park, Jin-Man Han, Kyehyun Kyung, Young-Hyun Jun:
A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory. VLSIC 2012: 132-133
Coauthor Index
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