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2020 – today
- 2024
[c6]Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude:
Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. VLSI Technology and Circuits 2024: 1-2- 2022
- [c5]Gabriele Navarro
, C. Sabbione, Valentina Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu:
Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. IMW 2022: 1-4 - [c4]Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard:
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. VLSI Technology and Circuits 2022: 332-333
2010 – 2019
- 2017
- [c3]Benoit Sklénard, Philippe Blaise, Boubacar Traore, Alberto Dragoni, Cecile Nail, Elisa Vianello:
Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper). ESSDERC 2017: 46-49 - 2016
- [c2]M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez, F. Mazen, E. Vilain, M. Guillermet, Simon Jeannot, Elisa Vianello, Luca Perniola:
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. ESSDERC 2016: 168-171 - 2013
- [c1]Benoit Voisin, Benoit Roche, Eva Dupont-Ferrier, Benoit Sklénard, Manuel Cobian, Xavier Jehl, Olga Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer:
The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire. ESSDERC 2013: 147-150
Coauthor Index
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