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ORCIDOlivier Weber
Person information
- affiliation: STMicroelectronics, Crolles, France
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2020 – today
- 2024
[c15]R. Berthelon, Olivier Weber, F. Ibars, B. Revel, C. Borowiak, J. C. Grenier, B. Dumont, S. Desmoulins, P. O. Sassoulas, P. Ferreira, S. Chouteau, S. Niel, Rossella Ranica, R. Gonella, Franck Arnaud:
Unlimited Bi-directional Back-Bias in FD-SOI Technology With New Dual Isolation Integration. VLSI Technology and Circuits 2024: 1-2- 2023
- [c14]Xinze Li, Yuxuan Wu, Qiao Teng, Ying Sun, Xiao Gong, Guillaume Besnard, Christophe Maleville, Olivier Weber, Rui Zhang, Bing Chen, Dawei Gao, Ran Cheng:
Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress. ICICDT 2023: 116-119 - [c13]Antonino Conte, Francesco Tomaiuolo, Marco Ruta, Andrea Redaelli
, Franck Arnaud, Thomas Jouanneau, Christian Boccaccio, Olivier Weber:
An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications. IMW 2023: 1-4 - 2021
- [c12]Andrea Redaelli, Anna Gandolfo, Giulia Samanni, Enrico Gomiero, Elisa Petroni, Luca Scotti, Andrea Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, Christian Boccaccio, Jury Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, Antonino Conte, Fabio Disegni, M. De Tomasi, A. Ventre, Matteo Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, Roberto Annunziata, R. Gonella:
Improving Ge-rich GST ePCM reliability through BEOL engineering. ESSDERC 2021: 231-234 - [c11]Fabio Disegni, A. Ventre, A. Molgora, Paolo Cappelletti, R. Badalamenti, P. Ferreira, G. Castagna, Andreia Cathelin, Anna Gandolfo, Andrea Redaelli, D. Manfrè, Alfonso Maurelli, C. Torti, F. Piazza, M. Carfì, Franck Arnaud, M. Perroni, M. Caruso, S. Pezzini, Roberto Annunziata, G. Piazza, Olivier Weber, M. Peri:
16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update. VLSI Circuits 2021: 1-2
2010 – 2019
- 2019
- [c10]Franck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber:
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. ESSCIRC 2019: 7-10 - [c9]Franck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber:
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. ESSDERC 2019: 7-10 - [c8]Fabio Disegni, Roberto Annunziata, A. Molgora, G. Campardo, Paolo Cappelletti, P. Zuliani, P. Ferreira, A. Ventre, G. Castagna, Andreia Cathelin, Anna Gandolfo, F. Goller, S. Malhi, D. Manfrè, Alfonso Maurelli, C. Torti, Franck Arnaud, M. Carfì, M. Perroni, M. Caruso, S. Pezzini, G. Piazza, Olivier Weber, M. Peri:
Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI. VLSI Circuits 2019: 204- - 2017
- [c7]Olivier Weber:
FDSOI vs FinFET: differentiating device features for ultra low power & IoT applications. ICICDT 2017: 1-3 - 2016
- [c6]Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2 - 2015
- [c5]Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond:
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC 2015: 246-249 - [c4]Olivier Weber, Emmanuel Josse, J. Mazurier, Michel Haond:
Static and dynamic power management in 14nm FDSOI technology. ICICDT 2015: 1-4 - 2014
- [c3]François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond:
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC 2014: 106-109 - [c2]J. Mazurier, Olivier Weber, François Andrieu, Cyrille Le Royer, Olivier Faynot, Maud Vinet:
Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. ICICDT 2014: 1-4 - 2012
- [j1]J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux:
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below. J. Low Power Electron. 8(1): 125-132 (2012)
2000 – 2009
- 2009
- [c1]Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, Loan Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki:
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. ESSCIRC 2009: 88-91
Coauthor Index
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