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2020 – today
- 2024
- [j19]Ashwin Sanjay Lele, Muya Chang, Samuel D. Spetalnick, Brian Crafton, Shota Konno, Zishen Wan, Ashwin Bhat, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Fused Frame and Event-Based Target Identification and Tracking. IEEE J. Solid State Circuits 59(1): 52-64 (2024) - [j18]Hung-Hsi Hsu, Tai-Hao Wen, Wei-Hsing Huang, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Yu-Hsiang Chin, Yu-Chiao Chen, Chung-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme. IEEE J. Solid State Circuits 59(1): 116-127 (2024) - [j17]De-Qi You, Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices. IEEE J. Solid State Circuits 59(1): 219-230 (2024) - [j16]Akash Levy, Luke R. Upton, Michael D. Scott, Dennis Rich, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Boris Murmann, Priyanka Raina:
EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage. IEEE J. Solid State Circuits 59(7): 2081-2092 (2024) - [j15]Xiaoyu Sun, Weidong Cao, Brian Crafton, Kerem Akarvardar, Haruki Mori, Hidehiro Fujiwara, Hiroki Noguchi, Yu-Der Chih, Meng-Fan Chang, Yih Wang, Tsung-Yung Jonathan Chang:
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43(4): 1191-1205 (2024) - [c42]Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C. ISSCC 2024: 288-290 - [c41]Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang:
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. ISSCC 2024: 292-294 - [c40]Samuel D. Spetalnick, Ashwin Sanjay Lele, Brian Crafton, Muya Chang, Sigang Ryu, Jong-Hyeok Yoon, Zhijian Hao, Azadeh Ansari, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
30.1 A 40nm VLIW Edge Accelerator with 5MB of 0.256pJ/b RRAM and a Localization Solver for Bristle Robot Surveillance. ISSCC 2024: 482-484 - [c39]Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Kinshuk Khare, Cheng-En Lee, Xiaochen Peng, Vineet Joshi, Chao-Kai Chuang, Shu-Huan Hsu, Takeshi Hashizume, Toshiaki Naganuma, Chen-Hung Tien, Yao-Yi Liu, Yen-Chien Lai, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell. ISSCC 2024: 572-574 - [c38]Tai-Hao Wen, Hung-Hsi Hsu, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices. ISSCC 2024: 580-582 - 2023
- [j14]Je-Min Hung, Tai-Hao Wen, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices. IEEE J. Solid State Circuits 58(1): 303-315 (2023) - [c37]Luke R. Upton, Akash Levy, Michael D. Scott, Dennis Rich, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina, Boris Murmann:
EMBER: A 100 MHz, 0.86 mm2, Multiple-Bits-per-Cell RRAM Macro in 40 nm CMOS with Compact Peripherals and 1.0 pJ/bit Read Circuitry. ESSCIRC 2023: 469-472 - [c36]Haruki Mori, Wei-Chang Zhao, Cheng-En Lee, Chia-Fu Lee, Yu-Hao Hsu, Chao-Kai Chuang, Takeshi Hashizume, Hao-Chun Tung, Yao-Yi Liu, Shin-Rung Wu, Kerem Akarvardar, Tan-Li Chou, Hidehiro Fujiwara, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update. ISSCC 2023: 132-133 - [c35]Wei-Hsing Huang, Tai-Hao Wen, Je-Min Hung, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Hung-Hsi Hsu, Yu-Hsiang Chin, Yu-Chiao Chen, Chuna-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W. ISSCC 2023: 258-259 - [c34]Muya Chang, Ashwin Sanjay Lele, Samuel D. Spetalnick, Brian Crafton, Shota Konno, Zishen Wan, Ashwin Bhat, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 73.53TOPS/W 14.74TOPS Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Hybrid Frame and Event-Based Target Tracking. ISSCC 2023: 426-427 - [c33]Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Hon-Jarn Lin, Yen-An Chang, Cheng-Han Lu, Yu-Lin Chen, Chieh-Pu Lo, Chung-Chieh Chen, Cheng-Hsiung Kuo, Tan-Li Chou, Chia-Yu Wang, J. J. Wu, Roger Wang, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity. ISSCC 2023: 494-495 - [c32]Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, De-Qi You, Fang-Yi Chen, Andrew Lee, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices. ISSCC 2023: 496-497 - [c31]Samuel D. Spetalnick, Muya Chang, Shota Konno, Brian Crafton, Ashwin Sanjay Lele, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 2.38 MCells/mm2 9.81 -350 TOPS/W RRAM Compute-in-Memory Macro in 40nm CMOS with Hybrid Offset/IOFF Cancellation and ICELL RBLSL Drop Mitigation. VLSI Technology and Circuits 2023: 1-2 - [c30]Tai-Hao Wen, Je-Min Hung, Hung-Hsi Hsu, Yuan Wu, Fu-Chun Chang, Chung-Yuan Li, Chih-Han Chien, Chin-I Su, Win-San Khwa, Jui-Jen Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. VLSI Technology and Circuits 2023: 1-2 - 2022
- [j13]Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection. IEEE J. Solid State Circuits 57(1): 68-79 (2022) - [j12]Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding. IEEE J. Solid State Circuits 57(3): 845-857 (2022) - [j11]Kartik Prabhu, Albert Gural, Zainab F. Khan, Robert M. Radway, Massimo Giordano, Kalhan Koul, Rohan Doshi, John W. Kustin, Timothy Liu, Gregorio B. Lopes, Victor Turbiner, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Guénolé Lallement, Boris Murmann, Subhasish Mitra, Priyanka Raina:
CHIMERA: A 0.92-TOPS, 2.2-TOPS/W Edge AI Accelerator With 2-MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference. IEEE J. Solid State Circuits 57(4): 1013-1026 (2022) - [j10]Yen-Cheng Chiu, Tung-Cheng Chang, Chun-Ying Lee, Je-Min Hung, Kuang-Tang Chang, Cheng-Xin Xue, Ssu-Yen Wu, Hui-Yao Kao, Peng Chen, Hsiao-Yu Huang, Shih-Hsih Teng, Chieh-Pu Lo, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, Yier Jin, Meng-Fan Chang:
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device. IEEE J. Solid State Circuits 57(6): 1936-1949 (2022) - [c29]Muya Chang, Samuel D. Spetalnick, Brian Crafton, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40nm 60.64TOPS/W ECC-Capable Compute-in-Memory/Digital 2.25MB/768KB RRAM/SRAM System with Embedded Cortex M3 Microprocessor for Edge Recommendation Systems. ISSCC 2022: 1-3 - [c28]Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Mei-Chen Chuang, Rawan Naous, Chao-Kai Chuang, Takeshi Hashizume, Dar Sun, Chia-Fu Lee, Kerem Akarvardar, Saman Adham, Tan-Li Chou, Mahmut Ersin Sinangil, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations. ISSCC 2022: 1-3 - [c27]Je-Min Hung, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Tai-Hao Wen, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices. ISSCC 2022: 1-3 - [c26]Samuel D. Spetalnick, Muya Chang, Brian Crafton, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40nm 64kb 26.56TOPS/W 2.37Mb/mm2RRAM Binary/Compute-in-Memory Macro with 4.23x Improvement in Density and >75% Use of Sensing Dynamic Range. ISSCC 2022: 1-3 - [c25]Yen-Cheng Chiu, Chia-Sheng Yang, Shih-Hsih Teng, Hsiao-Yu Huang, Fu-Chun Chang, Yuan Wu, Yu-An Chien, Fang-Ling Hsieh, Chung-Yuan Li, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, Chung-Chuan Lo, Win-San Khwa, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Chieh-Pu Lo, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations. ISSCC 2022: 178-180 - [c24]Chia-Fu Lee, Cheng-Han Lu, Cheng-En Lee, Haruki Mori, Hidehiro Fujiwara, Yi-Chun Shih, Tan-Li Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications. VLSI Technology and Circuits 2022: 24-25 - 2021
- [j9]Ziyun Li, Zhehong Wang, Li Xu, Qing Dong, Bowen Liu, Chin-I Su, Wen-Ting Chu, George Tsou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Dennis Sylvester, Hun-Seok Kim, David T. Blaauw:
RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator. IEEE J. Solid State Circuits 56(4): 1105-1115 (2021) - [c23]Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation. CICC 2021: 1-2 - [c22]Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Peng Chen, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. ISSCC 2021: 245-247 - [c21]Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara, Yi-Chun Shih, Chia-Fu Lee, Rawan Naous, Yu-Lin Chen, Chieh-Pu Lo, Cheng-Han Lu, Haruki Mori, Wei-Cheng Zhao, Dar Sun, Mahmut E. Sinangil, Yen-Huei Chen, Tan-Li Chou, Kerem Akarvardar, Hung-Jen Liao, Yih Wang, Meng-Fan Chang, Tsung-Yung Jonathan Chang:
An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications. ISSCC 2021: 252-254 - [c20]Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification. ISSCC 2021: 404-406 - [c19]Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang:
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. VLSI Circuits 2021: 1-2 - [c18]Massimo Giordano, Kartik Prabhu, Kalhan Koul, Robert M. Radway, Albert Gural, Rohan Doshi, Zainab F. Khan, John W. Kustin, Timothy Liu, Gregorio B. Lopes, Victor Turbiner, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Guénolé Lallement, Boris Murmann, Subhasish Mitra, Priyanka Raina:
CHIMERA: A 0.92 TOPS, 2.2 TOPS/W Edge AI Accelerator with 2 MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference. VLSI Circuits 2021: 1-2 - 2020
- [c17]Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Chieh-Pu Lo, Meng-Chun Shih, Kuei-Hung Shen, Harry Chuang, Tsung-Yung Jonathan Chang:
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference. ISSCC 2020: 222-224 - [c16]Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai, Chin-I Su, Pei-Ling Tseng, Wei-Chi Chen, Wu-Chin Tsai, Wen-Ting Chu, Tong-Chern Ong, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range. VLSI Circuits 2020: 1-2 - [c15]Zhehong Wang, Ziyun Li, Li Xu, Qing Dong, Chin-I Su, Wen-Ting Chu, George Tsou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Dennis Sylvester, Hun-Seok Kim, David T. Blaauw:
An All-Weights-on-Chip DNN Accelerator in 22nm ULL Featuring 24×1 Mb eRRAM. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j8]Qing Dong, Zhehong Wang, Jongyup Lim, Yiqun Zhang, Mahmut E. Sinangil, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester:
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination. IEEE J. Solid State Circuits 54(1): 231-239 (2019) - [j7]Chieh-Pu Lo, Wen-Zhang Lin, Wei-Yu Lin, Huan-Ting Lin, Tzu-Hsien Yang, Yen-Ning Chiang, Ya-Chin King, Chrong Jung Lin, Yu-Der Chih, Tsung-Yung Jonathon Chang, Meng-Fan Chang:
A ReRAM Macro Using Dynamic Trip-Point-Mismatch Sampling Current-Mode Sense Amplifier and Low-DC Voltage-Mode Write-Termination Scheme Against Resistance and Write-Delay Variation. IEEE J. Solid State Circuits 54(2): 584-595 (2019) - [j6]Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time. IEEE J. Solid State Circuits 54(4): 1029-1038 (2019) - 2018
- [c14]Chien-An Lai, Chung-Cheng Chou, Chi-Hsiang Weng, Zheng-Jun Lin, Pei-Ling Tseng, Chien-Fan Wang, Chih-Chen Wang, Chin-I Su, Wei-Chi Chen, Yu-Cheng Lin, Tong-Chern Ong, Chi Chang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40nm 256K×144 Embedded RRAM with Low Voltage Current Limiter and Ambient Compensation Scheme to Improve the Read Window. A-SSCC 2018: 13-16 - [c13]Chung-Cheng Chou, Zheng-Jun Lin, Pei-Ling Tseng, Chih-Feng Li, Chih-Yang Chang, Wei-Chi Chen, Yu-Der Chih, Tsung-Yung Jonathan Chang:
An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance. ISSCC 2018: 478-480 - [c12]Qing Dong, Zhehong Wang, Jongyup Lim, Yiqun Zhang, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester:
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination. ISSCC 2018: 480-482 - [c11]Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time. VLSI Circuits 2018: 79-80 - [c10]Kaiyuan Yang, Qing Dong, Zhehong Wang, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester:
A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM. VLSI Circuits 2018: 171-172 - 2017
- [c9]Chia-Fu Lee, Hon-Jarn Lin, Chiu-Wang Lien, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 1.4Mb 40-nm embedded ReRAM macro with 0.07um2 bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application. A-SSCC 2017: 9-12 - [c8]Qing Dong, Yejoong Kim, Inhee Lee, Myungjoon Choi, Ziyun Li, Jingcheng Wang, Kaiyuan Yang, Yen-Po Chen, Junjie Dong, Minchang Cho, Gyouho Kim, Wei-Keng Chang, Yun-Sheng Chen, Yu-Der Chih, David T. Blaauw, Dennis Sylvester:
11.2 A 1Mb embedded NOR flash memory with 39µW program power for mm-scale high-temperature sensor nodes. ISSCC 2017: 198-199 - [c7]Shau-Yu Chou, Yu-Shiang Chen, Jun-Hao Chang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme. ISSCC 2017: 200-201 - 2015
- [j5]Meng-Fan Chang, Yu-Fan Lin, Yen-Chen Liu, Jui-Jen Wu, Shin-Jang Shen, Wu-Chin Tsai, Yu-Der Chih:
An Asymmetric-Voltage-Biased Current-Mode Sensing Scheme for Fast-Read Embedded Flash Macros. IEEE J. Solid State Circuits 50(9): 2188-2198 (2015) - [j4]Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chrong Jung Lin, Ku-Feng Lin, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations. IEEE J. Solid State Circuits 50(11): 2786-2795 (2015) - 2014
- [j3]Meng-Fan Chang, Chia-Chen Kuo, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, Jui-Jen Wu, Yu-Der Chih:
Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme. IEEE J. Solid State Circuits 49(4): 908-916 (2014) - [c6]Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Sreedhar Natarajan, Tsung-Yung Jonathan Chang:
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme. ISSCC 2014: 332-333 - 2013
- [j2]Meng-Fan Chang, Shin-Jang Shen, Chia-Chi Liu, Che-Wei Wu, Yu-Fan Lin, Ya-Chin King, Chorng-Jung Lin, Hung-Jen Liao, Yu-Der Chih, Hiroyuki Yamauchi:
An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory. IEEE J. Solid State Circuits 48(3): 864-877 (2013) - [j1]Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Sue-Meng Yang, Ku-Feng Lin, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih:
A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro. IEEE J. Solid State Circuits 48(9): 2250-2259 (2013) - [c5]Hung-Chang Yu, Kai-Chun Lin, Ku-Feng Lin, Chin-Yi Huang, Yu-Der Chih, Tong-Chern Ong, Tsung-Yung Jonathan Chang, Sreedhar Natarajan, Luan C. Tran:
Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology. ISSCC 2013: 224-225 - [c4]Caleb Y.-S. Cho, J. C. Wang, Lion Huang, Milo Weng, Yu-Fan Lin, Chia-Fu Lee, C. W. Lien, H. C. Feng, Tassa Yang, S. P. Liao, J. J. Wu, Yu-Der Chih, Sreedhar Natarajan:
A 55-nm, 0.86-Volt operation, 75MHz high speed, 96uA/MHz low power, wide voltage supply range 2M-bit split-gate embedded Flash. VLSI-DAT 2013: 1-4 - [c3]Hung-Chang Yu, Ku-Feng Lin, Kai-Chun Lin, Yu-Der Chih, Sreedhar Natarajan:
A 180 MHz direct access read 4.6Mb embedded flash in 90nm technology operating under wide range power supply from 2.1V to 3.6V. VLSI-DAT 2013: 1-4 - 2012
- [c2]Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Ku-Feng Lin, Shu-Meng Yang, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih:
A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time. ISSCC 2012: 434-436 - 2011
- [c1]Meng-Fan Chang, Shin-Jang Shen, Chia-Chi Liu, Che-Wei Wu, Yu-Fan Lin, Shang-Chi Wu, Chia-En Huang, Han-Chao Lai, Ya-Chin King, Chorng-Jung Lin, Hung-Jen Liao, Yu-Der Chih, Hiroyuki Yamauchi:
An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory. ISSCC 2011: 206-208
Coauthor Index
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