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ORCIDVincent Huard
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2020 – today
- 2024
[j14]Ryuichi Nakajima
, Takafumi Ito, Shotaro Sugitani, Tomoya Kii, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard:
Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies. IEICE Trans. Electron. 107(7): 191-200 (2024)- 2023
- [c35]Vincent Huard:
Embracing the new era of AI at the edge. ICICDT 2023: xi - [c34]Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard:
Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. IOLTS 2023: 1-5 - [c33]Francesco Conti, Davide Rossi, Gianna Paulin, Angelo Garofalo, Alfio Di Mauro, Georg Rutishauser, Gianmarco Ottavi, Manuel Eggimann, Hayate Okuhara, Vincent Huard, Olivier Montfort, Lionel Jure, Nils Exibard, Pascal Gouedo, Mathieu Louvat, Emmanuel Botte, Luca Benini:
A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16 RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and 30%-Boost Adaptive Body Biasing. ISSCC 2023: 326-327 - 2022
- [c32]Vincent Huard, Francois Jacquet, Souhir Mhira, Lionel Jure, Olivier Montfort, Mathieu Louvat, L. Zaia, F. Bertrand, E. Acacia, O. Caffin, H. Belhadj, O. Durand, Nils Exibard, Vincent Bonnet, A. Charvier, Paolo Bernardi, Riccardo Cantoro:
Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode. IRPS 2022: 8 - [c31]Sidina Wane, T. V. Dinh, Q. H. Tran, Damienne Bajon, F. Ferrero, Lionel Duvillaret, Gwenaël Gaborit, Jacques Sombrin, E. de Lédinghen, P. Laban, Vincent Huard, Souhir Mhira, L. Tombakdjian, Philippe Ratajczak, A. Bousseksou:
Correlation Technologies for OTA Testing of mmWave Mobile Devices Using Energy Metrics. RWS 2022: 68-71 - 2021
- [c30]L. Degli Abbati, Rudolf Ullmann, G. Paganini, M. Coppetta, L. Zaia, Vincent Huard, O. Montfort, Riccardo Cantoro, Giorgio Insinga, F. Venini, P. Calao, Paolo Bernardi:
Industrial best practice: cases of study by automotive chip- makers. DFT 2021: 1-6 - [c29]Yasser Moursy, Thiago Raupp da Rosa, Lionel Jure, Anthony Quelen, Sébastien Genevey, Lionel Pierrefeu, Emmanuel G. Collins Jr., Joerg Winkler, Jonathan Park, Gaël Pillonnet, Vincent Huard, Andrea Bonzo, Philippe Flatresse:
A 0.021mm2 PVT-Aware Digital-Flow-Compatible Adaptive Back-Biasing Regulator with Scalable Drivers Achieving 450% Frequency Boosting and 30% Power Reduction in 22nm FDSOI Technology. ISSCC 2021: 492-494
2010 – 2019
- 2018
- [c28]Ajith Sivadasan, Riddhi Jitendrakumar Shah, Vincent Huard, Florian Cacho, Lorena Anghel:
NBTI aged cell rejuvenation with back biasing and resulting critical path reordering for digital circuits in 28nm FDSOI. DATE 2018: 997-998 - [c27]M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik:
Modeling self-heating effects in advanced CMOS nodes. IRPS 2018: 3-1 - [c26]Vincent Huard, Souhir Mhira, A. Barclais, X. Lecocq, F. Raugi, M. Cantournet, Alain Bravaix:
Managing electrical reliability in consumer systems for improved energy efficiency. IRPS 2018: 3 - [c25]Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix:
Resilient automotive products through process, temperature and aging compensation schemes. IRPS 2018: 3 - [c24]Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix:
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS 2018: 4-1 - [c23]Riddhi Jitendrakumar Shah, Florian Cacho, Vincent Huard, Souhir Mhira, D. Arora, Pankaj Agarwal, Shubham Kumar, S. Balaraman, Bijoy Kumar Singh, Lorena Anghel:
Investigation of speed sensors accuracy for process and aging compensation. IRPS 2018: 5 - [c22]Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik:
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS 2018: 6-1 - 2017
- [j13]Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix:
Enabling robust automotive electronic components in advanced CMOS nodes. Microelectron. Reliab. 76-77: 13-24 (2017) - [j12]R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel:
Characterization of Low Drop-Out during ageing and design for yield. Microelectron. Reliab. 76-77: 92-96 (2017) - [c21]Ajith Sivadasan, Armelle Notin, Vincent Huard, Etienne Maurin, Souhir Mhira, Florian Cacho, Lorena Anghel:
Workload dependent reliability timing analysis flow. DATE 2017: 736-737 - [c20]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix:
Dynamic aging compensation and Safety measures in Automotive environment. IOLTS 2017: 106-112 - [c19]Florian Cacho, Ahmed Benhassain, Riddhi Jitendrakumar Shah, Souhir Mhira, Vincent Huard, Lorena Anghel:
Investigation of critical path selection for in-situ monitors insertion. IOLTS 2017: 247-252 - [c18]Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix:
Cognitive approach to support dynamic aging compensation. ITC 2017: 1-7 - 2016
- [j11]Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix:
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64: 158-162 (2016) - [j10]Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard:
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64: 163-167 (2016) - [c17]Ahmed Benhassain, Florian Cacho, Vincent Huard, Lorena Anghel:
Early failure prediction by using in-situ monitors: Implementation and application results. ERMAVSS@DATE 2016: 21-24 - [c16]Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel:
Workload Impact on BTI HCI Induced Aging of Digital Circuits: A System level Analysis. ERMAVSS@DATE 2016: 38-40 - [c15]Ajith Sivadasan, Florian Cacho, Sidi Ahmed Benhassain, Vincent Huard, Lorena Anghel:
Study of workload impact on BTI HCI induced aging of digital circuits. DATE 2016: 1020-1021 - [c14]Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard:
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS 2016: 43-46 - [c13]Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, Vincent Knopik, Abhishek Jain, C. R. Parthasarathy, Lorena Anghel:
Activity profiling: Review of different solutions to develop reliable and performant design. IOLTS 2016: 47-50 - [c12]Ahmed Benhassain, Souhir Mhira, Florian Cacho, Vincent Huard, Lorena Anghel:
In-situ slack monitors: taking up the challenge of on-die monitoring of variability and reliability. IVSW 2016: 1-5 - [c11]Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2 - [c10]Lorena Anghel, Ahmed Benhassain, Ajith Sivadasan, Florian Cacho, Vincent Huard:
Early system failure prediction by using aging in situ monitors: Methodology of implementation and application results. VTS 2016: 1 - 2015
- [c9]Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, Abhishek Jain, Fabien Giner:
Timing in-situ monitors: Implementation strategy and applications results. CICC 2015: 1-4 - [c8]M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel:
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE 2015: 441-446 - [c7]M. Saliva, Florian Cacho, Cheikh Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel:
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS 2015: 4 - [c6]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - [c5]Olivier Héron, Chiara Sandionigi, E. Piriou, Safa Mbarek, Vincent Huard:
Workload-dependent BTI analysis in a processor core at high level. IRPS 2015: 6 - [c4]Vincent Huard, D. Angot, Florian Cacho:
From BTI variability to product failure rate: A technology scaling perspective. IRPS 2015: 6 - [c3]P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui:
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. IRPS 2015: 6 - 2012
- [j9]Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix:
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52(11): 2513-2520 (2012) - 2011
- [j8]Vincent Huard, N. Ruiz Amador, Florian Cacho, E. Pion:
A bottom-up approach for System-On-Chip reliability. Microelectron. Reliab. 51(9-11): 1425-1439 (2011) - [c2]N. Ruiz Amador, Vincent Huard, E. Pion, Florian Cacho, Damien Croain, V. Robert, Sylvain Engels, Philippe Flatresse, Lorena Anghel:
Bottom-up digital system-level reliability modeling. CICC 2011: 1-4
2000 – 2009
- 2007
- [c1]C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, Mickael Denais, Vincent Huard:
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. PATMOS 2007: 191-200 - 2006
- [j7]Vincent Huard, Mickael Denais, C. R. Parthasarathy:
NBTI degradation: From physical mechanisms to modelling. Microelectron. Reliab. 46(1): 1-23 (2006) - [j6]C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix:
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46(9-11): 1464-1471 (2006) - 2005
- [j5]Vincent Huard, Mickael Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45(1): 83-98 (2005) - [j4]Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005) - [j3]G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j2]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j1]G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43(8): 1211-1214 (2003)
Coauthor Index
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