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ORCIDYou Wang 0002
Person information
- affiliation: Beihang University, Hefei Innovation Research Institute, Hefei, China
- affiliation: Beihang Univeristy, School of Electronic and Information Engineering, Fert Beijing Institute, Beijing, China
- affiliation (PhD 2017): Télécom ParisTech, Institut Mines-Télécom, Paris, France
Other persons with the same name
- You Wang — disambiguation page
- You Wang 0001
![[0000-0003-2766-1581]](https://dblp1.uni-trier.de/img/orcid-mark.12x12.png "0000-0003-2766-1581")
— Zhejiang University, Institute of Cyber-Systems and Control, State Key Laboratory of Industrial Control Technology, Hangzhou, China (and 1 more) - You Wang 0003 — Tsinghua University, Department of Electrical Engineering, Beijing, China
- You Wang 0004 — Tsinghua University, Department of Computer Science, Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, China
- You Wang 0005 — Shanghai Jiao Tong University, UM-SJTU Joint Institute, RII Lab (Lab of Robotics Innovation and Intervention), Shanghai, China
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2020 – today
- 2024
[j14]Kaili Zhang, Zhongzhen Tong, Xinxin Liang, Chengzhi Wang, You Wang, Yue Zhang, Weisheng Zhao, Lang Zeng, Deming Zhang:
A Charge-Domain Compute-In-Memory Macro With Cell-Embedded DA Conversion and Two-Stage AD Conversion for Bit-Scalable MAC Operation. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1077-1081 (2024)- [j13]Haoran Du, You Wang, Jun Yang, Hao Cai:
Intrinsic MRAM Properties Enable Security Circuits. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1695-1700 (2024) - 2023
- [j12]Kaili Zhang, Deming Zhang, Mingyang Song, Zhipeng Guo, You Wang, Chengzhi Wang, Yue Zhang, Lang Zeng:
A Novel 9T1C-SRAM Compute-In-Memory Macro With Count-Less Pulse-Width Modulation Input and ADC-Less Charge-Integration-Count Output. IEEE Trans. Circuits Syst. I Regul. Pap. 70(10): 3944-3953 (2023) - 2022
- [j11]Zhengyi Hou, Zhaohao Wang, Chao Wang, Min Wang, You Wang, Xueyan Wang, Cenlin Duan, Jianlei Yang:
Reconfigurable and Dynamically Transformable In-Cache-MPUF System With True Randomness Based on the SOT-MRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 69(7): 2694-2706 (2022) - [j10]Rashid Ali, Deming Zhang, Hao Cai, Weisheng Zhao, You Wang:
A Machine Learning Attack-Resilient Strong PUF Leveraging the Process Variation of MRAM. IEEE Trans. Circuits Syst. II Express Briefs 69(6): 2712-2716 (2022) - [p1]You Wang, Hao Cai, Kaili Zhang, Bo Wu, Bo Liu, Deming Zhang, Weisheng Zhao:
Spintronic Solutions for Approximate Computing. Approximate Computing 2022: 99-117 - 2021
- [c22]Bo Wu, Kaili Zhang, Peng Wu, Deming Zhang, You Wang:
Radiation Hardened Design of STT-MRAM with High Recoverability from Double Node Upset. ICTA 2021: 39-40 - [c21]Rashid Ali, You Wang, Haoyuan Ma, Zhengyi Hou, Deming Zhang, Erya Deng, Weisheng Zhao:
A Reconfigurable Arbiter PUF Based on STT-MRAM. ISCAS 2021: 1-5 - [c20]Erya Deng, Wang Kang, Weisheng Zhao, Shaoqian Wei, You Wang, Deming Zhang:
Spin-Orbit Torque Nonvolatile Flip-Flop Designs. ISCAS 2021: 1-5 - [c19]Haoyuan Ma, You Wang, Rashid Ali, Zhengyi Hou, Deming Zhang, Erya Deng, Gefei Wang, Weisheng Zhao:
SpinSim: A Computer Architecture-Level Variation Aware STT-MRAM Performance Evaluation Framework. ISCAS 2021: 1-5 - [c18]Deming Zhang, Xian Wang, Kaili Zhang, Lang Zeng, You Wang, Bi Wang, Erya Deng, Chuanjie Wang, Peng Wu, Youguang Zhang, Weisheng Zhao:
Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory. ISCAS 2021: 1-5 - [c17]Yaoru Hou, We Ge, Yanan Guo, Lirida A. B. Naviner, You Wang, Bo Liu, Jun Yang, Hao Cai:
Cryogenic In-MRAM Computing. NANOARCH 2021: 1-6 - [c16]Xian Wang, Deming Zhang, Kaili Zhang, Erya Deng, You Wang, Weisheng Zhao:
A Novel Multi-Context Non-Volatile Content-Addressable Memory Cell and Multi-Level Architecture for High Reliability and Density. NVMSA 2021: 1-6 - 2020
- [j9]Kaili Zhang, Deming Zhang, Chengzhi Wang, Lang Zeng, You Wang, Weisheng Zhao:
Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction. IEEE Access 8: 50792-50800 (2020) - [c15]Zhengyi Hou, You Wang, Deming Zhang, Chengzhi Wang, Hao Cai:
A Modeling Attack Resilient Physical Unclonable Function Based on STT-MRAM. ACM Great Lakes Symposium on VLSI 2020: 65-70
2010 – 2019
- 2019
- [j8]Hao Cai, You Wang, Lirida Alves de Barros Naviner, Xinning Liu, Weiwei Shan, Jun Yang, Weisheng Zhao:
Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(1): 239-250 (2019) - [c14]Hao Cai, Menglin Han, Weiwei Shan, Jun Yang, You Wang, Wang Kang, Weisheng Zhao:
Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI. ACM Great Lakes Symposium on VLSI 2019: 135-140 - [c13]Hao Cai, Honglan Jiang, Menglin Han, Zhaohao Wang, You Wang, Jun Yang, Jie Han, Leibo Liu, Weisheng Zhao:
Pj-AxMTJ: Process-in-memory with Joint Magnetization Switching for Approximate Computing in Magnetic Tunnel Junction. ISVLSI 2019: 111-115 - [c12]Rashid Ali, You Wang, Zhengyi Hou, Haoyuan Ma, Youguang Zhang, Weisheng Zhao:
Process Variation-Resilient STT-MTJ based TRNG using Linear Correcting Codes. NANOARCH 2019: 1-6 - 2018
- [j7]Liuyang Zhang, Erya Deng, Hao Cai, You Wang, Lionel Torres, Aida Todri-Sanial, Youguang Zhang:
A high-reliability and low-power computing-in-memory implementation within STT-MRAM. Microelectron. J. 81: 69-75 (2018) - [c11]Menglin Han, Hao Cai, Jun Yang, Lirida A. B. Naviner, You Wang, Weisheng Zhao:
Stability and Variability Emphasized STT-MRAM Sensing Circuit With Performance Enhancement. APCCAS 2018: 386-389 - [c10]Hao Cai, Menglin Han, You Wang, Lirida A. B. Naviner, Xinning Liu, Jun Yang, Weisheng Zhao:
Reliability Emphasized MTJ/CMOS Hybrid Circuit Towards Ultra-Low Power. DCIS 2018: 1-5 - [c9]You Wang, Yue Zhang, Youguang Zhang, Weisheng Zhao, Hao Cai, Lirida A. B. Naviner:
Design Space Exploration of Magnetic Tunnel Junction based Stochastic Computing in Deep Learning. ACM Great Lakes Symposium on VLSI 2018: 403-408 - [c8]Hao Cai, You Wang, Wang Kang, Lirida A. B. Naviner, Weiwei Shan, Jun Yang, Weisheng Zhao:
Enabling Resilient Voltage-Controlled MeRAM Using Write Assist Techniques. ISCAS 2018: 1-5 - [c7]Hao Cai, You Wang, Wang Kang, Lirida A. B. Naviner, Xinning Liu, Jun Yang, Weisheng Zhao:
MRAM-on-FDSOI Integration: A Bit-Cell Perspective. ISVLSI 2018: 263-268 - 2017
- [j6]Hao Cai, You Wang, Lirida Alves de Barros Naviner, Weisheng Zhao:
Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(4): 847-857 (2017) - [c6]Hao Cai, You Wang, Lirida A. B. Naviner, Wang Kang, Weisheng Zhao:
Energy Efficient Magnetic Tunnel Junction Based Hybrid LSI Using Multi-Threshold UTBB-FD-SOI Device. ACM Great Lakes Symposium on VLSI 2017: 23-28 - [c5]Hao Cai, You Wang, Lirida A. B. Naviner, Weisheng Zhao:
Novel Pulsed-Latch Replacement in Non-Volatile Flip-Flop Core. ISVLSI 2017: 57-61 - 2016
- [j5]Hao Cai, Kaikai Liu, Lirida Alves de Barros Naviner, You Wang, Mariem Slimani, Jean-François Naviner:
Efficient reliability evaluation methodologies for combinational circuits. Microelectron. Reliab. 64: 19-25 (2016) - [j4]You Wang, Hao Cai, Lirida A. B. Naviner, Xiaoxuan Zhao, Yue Zhang, Mariem Slimani, Jacques-Olivier Klein, Weisheng Zhao:
A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI. Microelectron. Reliab. 64: 26-30 (2016) - [c4]You Wang, Hao Cai, Lirida A. B. Naviner, Jacques-Olivier Klein, Jianlei Yang, Weisheng Zhao:
A novel circuit design of true random number generator using magnetic tunnel junction. NANOARCH 2016: 123-128 - [c3]Hao Cai, You Wang, Lirida A. B. Naviner, Zhaohao Wang, Weisheng Zhao:
Approximate computing in MOS/spintronic non-volatile full-adder. NANOARCH 2016: 203-208 - 2015
- [j3]Hao Cai, You Wang, Kaikai Liu, Lirida Alves de Barros Naviner, Hervé Petit, Jean-François Naviner:
Cross-layer investigation of continuous-time sigma-delta modulator under aging effects. Microelectron. Reliab. 55(3-4): 645-653 (2015) - [j2]Hao Cai, You Wang, Lirida A. B. Naviner, W. S. Zhao:
Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology. Microelectron. Reliab. 55(9-10): 1323-1327 (2015) - [c2]Erya Deng, You Wang, Zhaohao Wang, Jacques-Olivier Klein, Bernard Dieny, Guillaume Prenat, Weisheng Zhao:
Robust magnetic full-adder with voltage sensing 2T/2MTJ cell. NANOARCH 2015: 27-32 - [c1]Lirida Alves de Barros Naviner, Hao Cai, You Wang, Weisheng Zhao, Arwa Ben Dhia:
Stochastic computation with Spin Torque Transfer Magnetic Tunnel Junction. NEWCAS 2015: 1-4 - 2014
- [j1]You Wang, Yue Zhang, Erya Deng, Jacques-Olivier Klein, Lirida A. B. Naviner, Weisheng Zhao:
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses. Microelectron. Reliab. 54(9-10): 1774-1778 (2014)
Coauthor Index
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