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"Ga contamination in silicon by Focused Ion Beam milling: Dynamic model ..."

Jin Huang et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.087

access: closed

type: Journal Article

metadata version: 2022-03-23

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Jin Huang, Markus Löffler, Wolfhard Moeller, Ehrenfried Zschech:
Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment. Microelectron. Reliab. 64: 390-392 (2016)

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