"15.7 A 32Mb RRAM in a 12nm FinFet Technology with a ..."

Yi-Cheng Huang et al. (2024)

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DOI: 10.1109/ISSCC49657.2024.10454367

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm² Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C. ISSCC 2024: 288-290

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