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"A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate ..."
Shaun Chou et al. (2021)
- Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang:
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. VLSI Circuits 2021: 1-2
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