"A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm ..."

Meng-Fan Chang et al. (2013)

> Home

Details and statistics

DOI: 10.1109/JSSC.2013.2259713

access: closed

type: Journal Article

metadata version: 2020-08-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/ChangWKSYLSKLC13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/ChangWKSYLSKLC13
Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Sue-Meng Yang, Ku-Feng Lin, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih:
A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro. IEEE J. Solid State Circuits 48(9): 2250-2259 (2013)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.