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ORCIDMicroelectronics Journal, Volume 38
Volume 38, Number 1, January 2007
- Lei Zhang, Xia Guo, Ting Liang, Xiaoling Gu, Qiao Ming Lin, Guangdi Shen:
Color rendering and luminous efficacy of trichromatic and tetrachromatic LED-based white LEDs. 1-6
- Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger:
Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. 7-13 - Jean-François Eloy:
A novel concept for optoelectronic nanotransistor design. 14-19 - Magdalena Kadlecíková, Marian Vojs
, Juraj Breza, Marián Veselý, Zdenek Frgala, Miroslav Michalka, Jirina Matejková, Anna Vojacková, Tibor Danis, Marian Marton:
Microwave and hot filament chemical vapour deposition of diamond multilayers on Si and WC-Co substrates. 20-23 - Clóves G. Rodrigues:
Hot-carrier relaxation in photoinjected ZnSe. 24-26 - Wei Wang, Jiawei Shi, Wenhai Jiang, Shuxu Guo, Hongmei Zhang, Baofu Quan, Dongge Ma:
High-mobility pentacene thin-film transistors with copolymer-gate dielectric. 27-30 - D. F. Takeuti, M. N. Tirolli, C. L. Danieli, Marco Antonio Robert Alves, Edmundo S. Braga, P. H. L. de Faria:
Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films. 31-34 - Pedro M. Santos, Vítor Costa, M. C. Gomes, Beatriz Vieira Borges, Mário Lança:
High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process. 35-40 - Wu Songping:
Preparation of ultra fine nickel-copper bimetallic powder for BME-MLCC. 41-46 - Ling Li, Gregor Meller, Hans Kosina:
Temperature and field-dependence of hopping conduction in organic semiconductors. 47-51 - Kristy A. Campbell, Christopher M. Anderson:
Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers. 52-59 - Kah-Yoong Chan, Bee-San Teo:
Investigation into the influence of direct current (DC) power in the magnetron sputtering process on the copper crystallite size. 60-62 - S. Youssef, R. Al Asmar, J. Podlecki, Frédérique Pascal-Delannoy, Y. Zaatar, A. Foucaran:
Characterization of LiTaO3 thin films fabricated by sol-gel technique. 63-66 - J. W. Wan, Wen-Jun Zhang, D. J. Bergstrom:
Recent advances in modeling the underfill process in flip-chip packaging. 67-75 - D. K. Maurya:
Effects of post-thermal treatment on the properties of rf reactive sputtered ITO films. 76-79 - Youqing Yu, Fei Gao, Guiguang Xiong:
Spin-orbit splitting dependent resonant third-order nonlinear optical susceptibility in InGaN/GaN multiple quantum wells. 80-86 - Xiaoming Wu, Jianyuan Yu, Tianling Ren, Litian Liu:
Micro-Raman spectroscopy measurement of stress in silicon. 87-90 - M. M. El-Nahass, K. F. Abd-El-Rahman, A. A. A. Darwish:
Fabrication and electrical characterization of p-NiPc/n-Si heterojunction. 91-95 - Ali Missaoui, Lotfi Beji, Mounir Gaidi, Zina Harrabi, Hafedh Ben Ouada, Abdelaziz Bouazizi:
Structural characterisation of CdS layers deposited on porous p-type GaAs. 96-101 - Yong-Soo Cho, Hidekuni Takao, Kazuaki Sawada, Makoto Ishida, Sie-Young Choi:
High speed SOI CMOS image sensor with pinned photodiode on handle wafer. 102-107 - Zhong Zhi You, Jiang Ya Dong:
Electrical and optical characteristics of polymer light-emitting devices with surface-treated indium-tin-oxide electrodes. 108-113 - Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs. 114-119 - Xiang-meng Jing, Di Chen, Dong-Ming Fang, Chuang Huang, Jing-Quan Liu, Xiang Chen:
Multi-layer microstructure fabrication by combining bulk silicon micromachining and UV-LIGA technology. 120-124 - Hyun-Kyu Ryu, Yil-Wook Kim, Kangtaek Lee, Chee Burm Shin, Chang-Koo Kim:
A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas. 125-129 - Massimo Alioto, Giuseppe Di Cataldo, Gaetano Palumbo:
Mixed Full Adder topologies for high-performance low-power arithmetic circuits. 130-139 - Daniela De Venuto, Leonardo Reyneri:
Fully digital strategy for fast calibration and test of SigmaDelta ADC's. 140-147
Volume 38, Number 2, February 2007
- Márta Rencz:
Thermal investigations of integrated circuits in systems at THERMINIC'05. 149-150 - Diego Mateo, Josep Altet, Eduardo Aldrete-Vidrio:
Electrical characterization of analogue and RF integrated circuits by thermal measurements. 151-156 - Jianzheng Hu, Lianqiao Yang, Moo Whan Shin:
Mechanism and thermal effect of delamination in light-emitting diode packages. 157-163 - Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. 164-170 - Mitsuteru Kimura, Fumitoshi Sakurai, Hirao Ohta, Tomoyuki Terada:
Proposal of a new structural thermal vacuum sensor with diode-thermistors combined with a micro-air-bridge heater. 171-176 - Marcin Janicki, Gilbert De Mey, Andrzej Napieralski:
Thermal analysis of layered electronic circuits with Green's functions. 177-184 - Paolo Emilio Bagnoli, Carlo Bartoli, Fabio Stefani:
Validation of the DJOSER analytical thermal simulator for electronic power devices and assembling structures. 185-196
- Chua-Chin Wang, Tzung-Je Lee, Chih-Chen Li, Ron Hu:
Voltage-to-frequency converter with high sensitivity using all-MOS voltage window comparator. 197-202 - MengYao Wang, Wei Pan, Bin Luo, Weili Zhang, XiHua Zou:
Optimization of gray-scale performance in pixellated-metal-mirror FLC-OASLM by equivalent circuit model. 203-209 - Jian Liu, Xinxin Li:
A piezoresistive microcantilever magnetic-field sensor with on-chip self-calibration function integrated. 210-215 - Mojtaba Karimi, Manouchehr Kalafi, Asghar Asgari:
Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-mum spectral region operating at room temperature. 216-221 - Hee-Wook You, Jung-Hyuk Koh:
Ag(Ta, Nb)O3 thin-film interdigital capacitors for microwave applications. 222-226 - Kuan Yew Cheong, F. A. Jasni:
Effects of precursor aging and post-deposition treatment time on photo-assisted sol-gel derived low-dielectric constant SiO2 thin film on Si. 227-230 - X. Y. Sun, W. L. Li, Z. R. Hong:
The electroluminescent investigation of double layer Eu-complex organic electronic luminescence diodes. 231-234 - S. A. Sofianos, Gaotsiwe Rampho, H. Azemtsa Donfack, Isaac E. Lagaris, H. Leeb:
Design of quantum filters with pre-determined reflection and transmission properties. 235-244 - Daya Ram Sahu, Shin-Yuan Lin, Jow-Lay Huang:
Improved properties of Al-doped ZnO film by electron beam evaporation technique. 245-250 - Jia-Chuan Lin, Po-Yu Yang, Wei-Chih Tsai:
Simulation and analysis of metamorphic high electron mobility transistors. 251-254 - Jing Zhou, Xiaomin Ren, Qi Wang, D. P. Xiong, Hui Huang, Yongqing Huang:
Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD. 255-258 - Fangcong Wang, Su Liu, Chunlin Zhang:
The dielectric constant of materials effect the property of the OLED. 259-261 - Macho Anani, Hamza Abid, Zouaoui Chama, Christian Mathieu, Adlane Sayede, B. Khelifa:
InxGa1-xN refractive index calculations. 262-266 - Hongliang Jiang, Duanzheng Yao, Shaohua Gong, Xiaobo Feng:
Parametric properties of the electron spin relaxation in InAs quantum dots. 267-271 - Weijun Luo, Ke Wei, Xiaojuan Chen, Chengzhan Li, Xinyu Liu, Xiaoliang Wang:
Structure optimization of field-plate AlGaN/GaN HEMTs. 272-274 - Yong Wang, Shu-ling Zhao, Fujun Zhang, Guang-cai Yuan, Zheng Xu:
Study of electroplex emission from a blend of two basic blue-emitting materials PVK and NPB. 275-277 - Xing-Ming Liu, Lin Han, Li-Tian Liu:
New application of polyimide in uncooled a-Si TFT infrared sensors. 278-281 - Su Chen, Zhitang Song, Yang Wang, Duanzheng Yao:
Preparation of one-dimensional photonic crystal with variable period by using ultra-high vacuum electron beam evaporation. 282-284 - Tirthajyoti Sarkar, Sudip K. Mazumder:
Dynamic power density, wavelength, and switching time modulation of optically triggered power transistor (OTPT) performance parameters. 285-298
Volume 38, Number 3, March 2007
- Daya Ram Sahu, Jow-Lay Huang:
Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures. 299-303 - Hung-Wei Wu, Yan-Kuin Su, Ru-Yuan Yang, Min-Hang Weng, Yu-Der Lin:
Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications. 304-309 - Jia-Chuan Lin, Yu-Chieh Chen, Wei-Chih Tsai:
The study of delta-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor. 310-315 - Chun Zhao, Shuangxi Xing, Youhai Yu, Wanjin Zhang, Ce Wang:
A novel all-plastic diode based upon pure polyaniline material. 316-320 - Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre:
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. 321-326 - Càndid Reig, C. J. Gómez-García, V. Muñoz-Sanjosé:
Crystal growth of Hg1-xMnxSe for infrared detection. 327-331 - Andre E. Botha:
Multiband k·p Riccati equation for electronic structure and transport in type-II heterostructures. 332-341 - Ali Rostami, Hassan Rasooli Saghai:
A novel proposal for ultra-high optical nonlinearity in GaN/AlGaN spherical centered defect quantum dot (SCDQD). 342-351 - Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta:
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. 352-359 - Suyan Xiao, Lufeng Che, Xinxin Li, Yuelin Wang:
A cost-effective flexible MEMS technique for temperature sensing. 360-364 - Xiaomeng Shi, Kiat Seng Yeo, Jianguo Ma, Manh Anh Do:
Distortion of pulsed signals in carbon nanotube interconnects. 365-370 - Sang-Hyun Kim, James G. Boyd, Sathyanarayanan Mani:
Mechanical behavior of mismatch strain-driven microcantilever. 371-380 - George T. Zardalidis, Ioannis Karafyllidis:
Design and simulation of a nanoelectronic single electron 2-4 decoder using a novel simulator. 381-387 - G. M. Alonzo-Medina, A. I. Oliva:
An in situ technique to measure gold resistance oscillations during the first stages of growth. 388-391 - Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai:
Determination of boron concentration in heavily doped p-type Si1-xGex/Si heterostructure by infrared ellipsometric spectroscopy. 392-397 - Tiemin Zhang, Guoqing Miao, Yixin Jin, Jianchun Xie, Hong Jiang, Zhiming Li, Hang Song:
Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD. 398-400 - Mao-Wang Lu, Gui-Lian Zhang, Yong-Hong Kong:
Bias-tunable electron-spin polarization in an antiparallel double delta-magnetic-barrier nanostructure. 401-405 - Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon:
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications. 406-415 - Yong-Soo Cho, Sung-Wook Jang, Young-Soo Sohn, Sie-Young Choi:
Design and fabrication of a vibration sensor using a conductive ball. 416-421 - D. W. Zhao, S. F. Song, S. L. Zhao, F. J. Zhang, Z. Xu:
Comparison of photoexcited energy transfer in the organic double-layer and multilayer quantum well structures. 422-425 - Amal Zaki, Hamed Elsimary, Mona E. Zaghloul:
Miniature SAW device using MEMS technology. 426-429 - Viswanath Annampedu, Meghanad D. Wagh:
Reconfigurable approximate pattern matching architectures for nanotechnology. 430-438 - Thomas Johnson, Robert Sobot, Shawn P. Stapleton:
CMOS RF class-D power amplifier with bandpass sigma-delta modulation. 439-446 - Zhouqi Gui, Guiguang Xiong, Fei Gao:
Parameter-dependent third-order nonlinear susceptibility of parabolic InGaN/GaN quantum dots. 447-451
Volume 38, Numbers 4-5, April-May 2007
- Daniela De Venuto, Tom Chen:
Editorial. 453 - Kambiz Rahimi, Chris Diorio:
Self-tuning adaptive delay sequential elements. 454-462 - Syed M. Alam, Chee Lip Gan, Carl V. Thompson, Donald E. Troxel:
Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations. 463-473 - Daniela De Venuto, Leonardo Reyneri:
Fully digital strategy for fast calibration and test of SigmaDelta ADCs. 474-481
- Victor Navarro-Botello, Juan A. Montiel-Nelson, Saeid Nooshabadi:
High performance low power CMOS dynamic logic for arithmetic circuits. 482-488 - Ginés Doménech-Asensi, Juan Hinojosa, Juan Martínez-Alajarín:
A behavioral model development methodology for microwave components and integration in VHDL-AMS. 489-495 - Neila Hizem, A. Kalboussi, R. Adhiri, A. Souifi:
Blue/green luminescence based on Zn(S)Se/GaAs heterostructures. 496-500 - Jin Zhao Huang, Zheng Xu, Fujun Zhang, Su Ling Zhao, Yuan Li, Lin Song, Xu Rong Xu:
Dissociation of excitons in organic light-emitting diodes. 501-504 - Macho Anani, Christian Mathieu, Hamza Abid, Sara Lebid, Youcef Amar:
Calculation of the effective indices of a GaN/InxGa1-xN optical guiding structure. 505-508 - Wei Hu, Yi Zhao, Chunsheng Ma, Jingying Hou, Shiyong Liu:
Improving the performance of organic thin-film transistor with a doped interlayer. 509-512 - Julio C. Rimada, Luis Manuel Hernández, James P. Connolly, K. W. J. Barnham:
Conversion efficiency enhancement of AlGaAs quantum well solar cells. 513-518 - Ching-Liang Dai, Heng-Ming Hsu, Ming-Chang Tsai, Ming-Ming Hsieh, Ming-Wei Chang:
Modeling and fabrication of a microelectromechanical microwave switch. 519-524 - Jing Huang, Mariam Momenzadeh, Fabrizio Lombardi:
Design of sequential circuits by quantum-dot cellular automata. 525-537 - Y. Zaatar, R. Al Asmar, J. Podlecki, S. Youssef, M. Abdallah, N. Ouaini, A. Foucaran:
Fabrication and characterization of stacked ZnO and ZnOGa2O3 layers for the realization of bulk acoustic wave resonated membranes. 538-546 - Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. 547-555 - Shi Fu, Guifu Ding, Hong Wang, Zhuoqing Yang, Jianzhi Feng:
Design and fabrication of a magnetic bi-stable electromagnetic MEMS relay. 556-563 - Zhong Zhi You:
Influence of electrode characteristics on the performance of organic light-emitting devices. 564-569 - Haitao Yin, Tianquan Lü, Hua Li, Zelong He:
Electronic transport through a T-shaped four-quantum dot system. 570-575 - R. Kinder, F. Schwierz, P. Beno, J. Geßner:
Simulation of boron diffusion in Si and strained SiGe layers. 576-582 - Ranjith Kumar, Volkan Kursun:
Voltage optimization for simultaneous energy efficiency and temperature variation resilience in CMOS circuits. 583-594 - Xianwu Xing, Ching-Chuen Jong:
A look-ahead synthesis technique with backtracking for switching activity reduction in low power high-level synthesis. 595-605 - Deping Xiong, Xiaomin Ren, Qi Wang, Aiguang Ren, Jing Zhou, Jihe Lv, Shiwei Cai, Hui Huang, Yongqing Huang:
Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition. 606-609 - Nabil Sghaier, Liviu Militaru, M'Hamed Trabelsi, Yacoubi Yacoubi, Souifi Souifi:
Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique. 610-614 - M. H. Boukhatem, M. El Tahchi, G. W. El Haj Moussa, M. Ajaka, A. Khoury, P. Mialhe:
Carriers temperature for an operating silicon p-n junction. 615-619 - Naoki Kakuda, Shiro Tsukamoto, Akira Ishii, Katsutoshi Fujiwara, Toshikazu Ebisuzaki, Koichi Yamaguchi, Yasuhiko Arakawa:
Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxy. 620-624 - G. S. Kliros, P. C. Divari:
Magnetocapacitance of a MODFET under two-dimensional periodic potential modulation. 625-631 - Wei Hu, Yi Zhao, Jingying Hou, Chunsheng Ma, Shiyong Liu:
Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer. 632-636 - Antonela Dima, Francesco Giuseppe Della Corte, Maurizio Casalino, Ivo Rendina:
Li batteries with porous sol-gel cathodes. 637-641 - A. Albina, P. L. Taberna, J. P. Cambronne, P. Simon, E. Flahaut, Thierry Lebey:
Influence of carbonaceous electrodes on capacitance and breakdown voltage for hybrid capacitor. 642-648 - Rajeevan Chandel, Sankar Sarkar, Rajendra Prasad Agarwal:
An analysis of interconnect delay minimization by low-voltage repeater insertion. 649-655
Volume 38, Numbers 6-7, June-July 2007
- Shang-Chou Chang, Tien-Chai Lin, Chen-Yu Pai:
Low-temperature process in growing carbon nanotube. 657-662 - Congxin Xia, Fengchun Jiang, Shuyi Wei, Xu Zhao:
Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot. 663-666 - Ryohei Izaki, Masayuki Hoshino, Tadashi Yaginuma, Nakaba Kaiwa, Shigeo Yamaguchi, Atsushi Yamamoto:
Thermal properties and thermoelectric microdevices with InN thin films. 667-671 - Ching-Liang Dai, Cheng-Hsiung Kuo, Ming-Chao Chiang:
Microelectromechanical resonator manufactured using CMOS-MEMS technique. 672-677 - Antonella Arena, Nicola Donato, Gaetano Saitta:
Electrical characterization of solid-state heterojunctions between PEDOT: PSS and an anionic polyelectrolyte. 678-681 - Georgy L. Pakhomov, Evgeny S. Leonov, Alexander Yu. Klimov:
Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures. 682-685 - Zhijun Wu, Hengqun Guo, Jiaxian Wang:
Highly efficient green top-emitting organic light-emitting devices with metal electrode structure. 686-689 - Gwiy-Sang Chung, Ki-Bong Han:
Characteristics of a micromachined piezovalve combined with a multilayer ceramic actuator. 690-694 - You Yin, Hayato Sone, Sumio Hosaka:
A chalcogenide-based device with potential for multi-state storage. 695-699 - Ke Liu, T. A. Schmedake, K. Daneshvar, Raphael Tsu:
Interaction of CdSe/ZnS quantum dots: Among themselves and with matrices. 700-705 - Assim Sagahyroon, Fadi A. Aloul:
Using SAT-based techniques in power estimation. 706-715