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"Physical study of the dissipated power area in high electron mobility ..."

Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger (2007)

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DOI: 10.1016/J.MEJO.2006.07.025

access: closed

type: Journal Article

metadata version: 2020-02-22

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Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger:
Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectron. J. 38(1): 7-13 (2007)

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