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"Investigation of Si/SiGe/Si heterostructure implanted by H ion and ..."

Changchun Chen et al. (2007)

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DOI: 10.1016/J.MEJO.2007.04.002

access: closed

type: Journal Article

metadata version: 2020-02-22

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Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai:
Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O₂ ambient. Microelectron. J. 38(6-7): 800-804 (2007)

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