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E. Latu-Romain

E. Romain-Latu

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2010 – 2019

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2017
[j4]
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  - journals/mr/TartarinLSLMBRR17
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  - https://dblp.org/rec/journals/mr/TartarinLSLMBRR17
Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux:
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectron. Reliab. 76-77: 344-349 (2017)
2013
[j3]
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  - journals/mr/KarboyanTRBCMLCLMRTBM13
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S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013)

2000 – 2009

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What is the meaning of the colors in the publication lists?

2009
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E. Latu-Romain, P. Gilet, G. Feuillet, P. Noel, J. Garcia, F. Lévy, A. Chelnokov:
Optical and electrical characterizations of vertically integrated ZnO nanowires. Microelectron. J. 40(2): 224-228 (2009)
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  - journals/mj/RobinLGRLFGTAEF09
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I.-C. Robin, M. Lafossas, J. Garcia, M. Rosina, E. Latu-Romain, Pierre Ferret, P. Gilet, A. Tchelnokov, M. Azize, Joel Eymery, G. Feuillet:
Growth and characterization of ZnO nanowires on p-type GaN. Microelectron. J. 40(2): 250-252 (2009)

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