default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDAntonio Gnudi
Person information
- affiliation: University of Bologna, Italy
Refine list
refinements active!
zoomed in on ?? of ?? records
view refined list in
export refined list as
Journal Articles
- 2024
[j20]Alessia Maria Elgani
, Matteo D'Addato, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A Temperature-Robust Envelope Detector Receiving OOK-Modulated Signals for Low-Power Applications. Sensors 24(19): 6369 (2024)- 2022
- [j19]Said Quqa, Alessio Antolini, Eleonora Franchi Scarselli, Antonio Gnudi, Andrea Lico, Marcella Carissimi, Marco Pasotti, Roberto Canegallo, Luca Landi, Pier Paolo Diotallevi:
Phase Change Memories in Smart Sensing Solutions for Structural Health Monitoring. J. Comput. Civ. Eng. 36(4) (2022) - 2020
- [j18]Alessia Maria Elgani, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector. IEEE Trans. Circuits Syst. I Regul. Pap. 67-I(8): 2612-2624 (2020) - 2018
- [j17]Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. 88-90: 752-755 (2018) - [j16]Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. 88-90: 1090-1093 (2018) - [j15]Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. 88-90: 1094-1097 (2018) - 2013
- [j14]Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44(1): 20-25 (2013) - 2011
- [j13]Marco Guermandi, Eleonora Franchi, Antonio Gnudi:
On the simulation of fast settling charge pump PLLs up to fourth order. Int. J. Circuit Theory Appl. 39(12): 1257-1273 (2011) - [j12]Eleonora Franchi Scarselli, Antonio Gnudi, Federico Natali, Mauro Scandiuzzo, Roberto Canegallo, Roberto Guerrieri:
Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling. IEEE J. Solid State Circuits 46(2): 498-506 (2011) - 2010
- [j11]Paola Tortori, Davide Guermandi, Marco Guermandi, Eleonora Franchi, Antonio Gnudi:
Quadrature VCOs based on direct second harmonic locking: Theoretical analysis and experimental validation. Int. J. Circuit Theory Appl. 38(10): 1063-1086 (2010) - 2007
- [j10]Stefano Vitali, Eleonora Franchi, Antonio Gnudi:
RFI/Q Downconverter With Gain/Phase Calibration. IEEE Trans. Circuits Syst. II Express Briefs 54-II(4): 367-371 (2007) - 2005
- [j9]Davide Guermandi, Paola Tortori, Eleonora Franchi, Antonio Gnudi:
A 0.83-2.5-GHz continuously tunable quadrature VCO. IEEE J. Solid State Circuits 40(12): 2620-2627 (2005) - 1998
- [j8]Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan:
Transient Analysis of Silicon Devices Using the Hydrodynamic Model. VLSI Design 6(1-4): 283-286 (1998) - 1994
- [j7]Alberto Leone, Antonio Gnudi, Giorgio Baccarani:
Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(11): 1400-1408 (1994) - 1993
- [j6]Antonio Gnudi, Davide Ventura, Giorgio Baccarani:
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11): 1706-1713 (1993) - 1992
- [j5]Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh:
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36(2): 208-232 (1992) - 1990
- [j4]Antonio Gnudi, Farouk Odeh, Massimo Rudan:
Investigation of non-local transport phenomena in small semiconductor devices. Eur. Trans. Telecommun. 1(3): 307-312 (1990) - 1989
- [j3]Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(5): 490-500 (1989) - 1988
- [j2]Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 231-242 (1988) - 1987
- [j1]Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani:
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6(5): 879-885 (1987)
Conference and Workshop Papers
- 2023
- [c30]Matteo D'Addato, Luca Perilli, Alessia Maria Elgani, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A Threshold Voltage Generator Circuit with Automatic Refresh and Dynamic Updating for Ultra-Low-Power Continuous-Time Comparators. ISCAS 2023: 1-5 - 2022
- [c29]Alessio Antolini, Andrea Lico, Eleonora Franchi Scarselli, Antonio Gnudi, Luca Perilli, Mattia Luigi Torres, Marcella Carissimi, Marco Pasotti, Roberto Canegallo:
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation. ESSCIRC 2022: 109-112 - [c28]Matteo D'Addato, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti:
A 54.8-nW, 256-bit Codeword Temperature-Robust Wake-Up Receiver minimizing False Wake-Ups for Ultra-Low-Power IoT Systems. ICECS 2022 2022: 1-4 - 2021
- [c27]Carmine Paolino, Alessio Antolini, Fabio Pareschi, Mauro Mangia, Riccardo Rovatti, Eleonora Franchi Scarselli, Antonio Gnudi, Gianluca Setti, Roberto Canegallo, Marcella Carissimi, Marco Pasotti:
Compressed Sensing by Phase Change Memories: Coping with Encoder non-Linearities. ISCAS 2021: 1-5 - 2020
- [c26]Matteo D'Addato, Alessio Antolini, Francesco Renzini, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Michele Magno, Roberto Canegallo:
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers. EWSN 2020: 224-229 - 2019
- [c25]Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini:
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC 2019: 86-89 - [c24]Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi:
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC 2019: 266-269 - 2018
- [c23]Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi:
3D TCAD modeling of NO2CNT FET sensors. ESSDERC 2018: 222-225 - [c22]Alessia Maria Elgani, Michele Magno, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti, Luca Benini:
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures. ICECS 2018: 793-796 - 2016
- [c21]Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani:
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC 2016: 180-183 - [c20]Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro:
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC 2016: 184-187 - [c19]Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani:
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC 2016: 416-419 - 2015
- [c18]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSCIRC 2015: 4-9 - [c17]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSDERC 2015: 4-9 - 2014
- [c16]Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC 2014: 262-265 - [c15]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC 2014: 313-316 - [c14]Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC 2014: 325-328 - [c13]Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336 - 2013
- [c12]Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC 2013: 69-72 - [c11]Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76 - [c10]Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC 2013: 81-84 - [c9]Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison:
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC 2013: 91-94 - [c8]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC 2013: 314-317 - 2012
- [c7]Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani:
Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108 - [c6]Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise:
TCAD degradation modeling for LDMOS transistors. ESSDERC 2012: 185-188 - 2009
- [c5]Luca Larcher, Riccardo Brama, Marcello Ganzerli, Jacopo Iannacci, Marco Bedani, Antonio Gnudi:
A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard. DATE 2009: 364-368 - [c4]Eleonora Franchi, Federico Natali, Antonio Gnudi, Roberto Guerrieri, Massimiliano Innocenti, Luca Ciccarelli, Mauro Scandiuzzo, Roberto Canegallo:
3D capacitive transmission of analog signals with automatic compensation of the voltage attenuation. ESSCIRC 2009: 116-119 - 2005
- [c3]Stefano Vitali, Eleonora Franchi, Antonio Gnudi:
A gain/phase mismatch calibration procedure for RF I/Q downconverters. ISCAS (3) 2005: 2108-2111 - 2004
- [c2]Davide Guermandi, Eleonora Franchi, Antonio Gnudi:
A design flow for inductively degenerated LNAs. ICECS 2004: 615-618 - [c1]Paola Tortori, Davide Guermandi, Eleonora Franchi, Antonio Gnudi:
Quadrature VCO based on direct second harmonic locking. ISCAS (1) 2004: 169-172
Informal and Other Publications
- 2008
- [i3]Jacopo Iannacci, Jason Tian, Roberto Gaddi, Antonio Gnudi, Marian Bartek:
A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package. CoRR abs/0802.3057 (2008) - [i2]Marco Bedani, F. Carozza, Roberto Gaddi, Antonio Gnudi, Benno Margesin, Flavio Giacomozzi:
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches. CoRR abs/0802.3088 (2008) - 2007
- [i1]Jacopo Iannacci, Jason Tian, Saoer Sinaga, Roberto Gaddi, Antonio Gnudi, Marian Bartek:
Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems. CoRR abs/0711.3275 (2007)
Coauthor Index
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
Unpaywalled article links
Add open access links from 
to the list of external document links (if available).
Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.
Archived links via Wayback Machine
For web page which are no longer available, try to retrieve content from the 
of the Internet Archive (if available).
Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.
Reference lists
Add a list of references from 
, 
, and 
to record detail pages.
load references from crossref.org and opencitations.net
Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.
Citation data
Add a list of citing articles from and to record detail pages.
load citations from opencitations.net
Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.
OpenAlex data
Load additional information about publications from 
.
Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.
last updated on 2024-10-30 21:34 CET by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint
dblp was originally created in 1993 at:
since 2018, dblp has been operated and maintained by:
the dblp computer science bibliography is funded and supported by:
