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"Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty."

Giovanni Betti Beneventi et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818822

access: closed

type: Conference or Workshop Paper

metadata version: 2019-09-25

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  dblp key:
  - conf/essderc/BeneventiGGRB13
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  - https://dblp.org/rec/conf/essderc/BeneventiGGRB13
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76

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