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"On the electron mobility of strained InGaAs channel MOSFETs."

Stefania Carapezzi et al. (2019)

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DOI: 10.1109/ESSDERC.2019.8901778

access: closed

type: Conference or Workshop Paper

metadata version: 2020-09-05

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  dblp key:
  - conf/essderc/CarapezziRGG19
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  - https://dblp.org/rec/conf/essderc/CarapezziRGG19
Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi:
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC 2019: 266-269

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