"TCAD degradation modeling for LDMOS transistors."

Susanna Reggiani et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343364

access: closed

type: Conference or Workshop Paper

metadata version: 2022-11-02

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Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise:
TCAD degradation modeling for LDMOS transistors. ESSDERC 2012: 185-188

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