"TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions."

Federico Monti et al. (2014)

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DOI: 10.1109/ESSDERC.2014.6948828

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-29

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Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336

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